Works by Guo, Yutuo

Results: 8

Gate-tunable large-scale flexible monolayer MoS2 devices for photodetectors and optoelectronic synapses.

Published in:

Nano Research, 2022, v. 15, n. 6, p. 5418, doi. 10.1007/s12274-022-4122-z

By:

Li, Na;
He, Congli;
Wang, Qinqin;
Tang, Jianshi;
Zhang, Qingtian;
Shen, Cheng;
Tang, Jian;
Huang, Heyi;
Wang, Shuopei;
Li, Jiawei;
Huang, Biying;
Wei, Zheng;
Guo, Yutuo;
Yuan, Jiahao;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2.

Published in:

Small Science, 2022, v. 2, n. 11, p. 1, doi. 10.1002/smsc.202200062

By:

Li, Jiawei;
Wang, Shuopei;
Li, Lu;
Wei, Zheng;
Wang, Qinqin;
Sun, Huacong;
Tian, Jinpeng;
Guo, Yutuo;
Liu, Jieying;
Yu, Hua;
Li, Na;
Long, Gen;
Bai, Xuedong;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Low power flexible monolayer MoS2 integrated circuits.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39390-9

By:

Tang, Jian;
Wang, Qinqin;
Tian, Jinpeng;
Li, Xiaomei;
Li, Na;
Peng, Yalin;
Li, Xiuzhen;
Zhao, Yanchong;
He, Congli;
Wu, Shuyu;
Li, Jiawei;
Guo, Yutuo;
Huang, Biying;
Chu, Yanbang;
Ji, Yiru;
Shang, Dashan;
Du, Luojun;
Yang, Rong;
Yang, Wei;
Bai, Xuedong

Publication type:

Article

Layer-by-layer epitaxy of multi-layer MoS2 wafers.

Published in:

National Science Review, 2022, v. 9, n. 6, p. 1, doi. 10.1093/nsr/nwac077

By:

Wang, Qinqin;
Tang, Jian;
Li, Xiaomei;
Tian, Jinpeng;
Liang, Jing;
Li, Na;
Ji, Depeng;
Xian, Lede;
Guo, Yutuo;
Li, Lu;
Zhang, Qinghua;
Chu, Yanbang;
Wei, Zheng;
Zhao, Yanchong;
Du, Luojun;
Yu, Hua;
Bai, Xuedong;
Gu, Lin;
Liu, Kaihui;
Yang, Wei

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202270047

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Highly Stretchable MoS2‐Based Transistors with Opto‐Synaptic Functionalities.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200238

By:

Li, Jiawei;
Li, Na;
Wang, Qinqin;
Wei, Zheng;
He, Congli;
Shang, Dashan;
Guo, Yutuo;
Zhang, Woyu;
Tang, Jian;
Liu, Jieying;
Wang, Shuopei;
Yang, Wei;
Yang, Rong;
Shi, Dongxia;
Zhang, Guangyu

Publication type:

Article

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics (Small 42/2020).

Published in:

Small, 2020, v. 16, n. 42, p. 1, doi. 10.1002/smll.202070229

By:

Tang, Jian;
Wei, Zheng;
Wang, Qinqin;
Wang, Yu;
Han, Bo;
Li, Xiaomei;
Huang, Biying;
Liao, Mengzhou;
Liu, Jieying;
Li, Na;
Zhao, Yanchong;
Shen, Cheng;
Guo, Yutuo;
Bai, Xuedong;
Gao, Peng;
Yang, Wei;
Chen, Lan;
Wu, Kehui;
Yang, Rong;
Shi, Dongxia

Publication type:

Article

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Published in:

Small, 2020, v. 16, n. 42, p. 1, doi. 10.1002/smll.202004276

By:

Tang, Jian;
Wei, Zheng;
Wang, Qinqin;
Wang, Yu;
Han, Bo;
Li, Xiaomei;
Huang, Biying;
Liao, Mengzhou;
Liu, Jieying;
Li, Na;
Zhao, Yanchong;
Shen, Cheng;
Guo, Yutuo;
Bai, Xuedong;
Gao, Peng;
Yang, Wei;
Chen, Lan;
Wu, Kehui;
Yang, Rong;
Shi, Dongxia

Publication type:

Article

Works by Guo, Yutuo

Gate-tunable large-scale flexible monolayer MoS<sub>2</sub> devices for photodetectors and optoelectronic synapses.

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe<sub>2</sub>.

Low power flexible monolayer MoS<sub>2</sub> integrated circuits.

Layer-by-layer epitaxy of multi-layer MoS2 wafers.

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities (Adv. Electron. Mater. 9/2022).

Highly Stretchable MoS<sub>2</sub>‐Based Transistors with Opto‐Synaptic Functionalities.

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS<sub>2</sub> for Novel Electronics (Small 42/2020).

In Situ Oxygen Doping of Monolayer MoS<sub>2</sub> for Novel Electronics.