Analysis and Manufacturing of GaN Trench‐Gate MOSFETs with Thick Bottom Dielectric.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 8, p. 1, doi. 10.1002/pssa.202400804
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- Publication type:
- Article
Works by Guo, Bohan
Results: 7
1
2
High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology.
- Published in:
- Crystals (2073-4352), 2024, v. 14, n. 3, p. 253, doi. 10.3390/cryst14030253
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- Publication type:
- Article
3
Annealing Process on Metal–Oxide–Semiconductor Channel Properties for Quasivertical GaN‐on‐Sapphire Trench Metal–Oxide–Semiconductor Field‐Effect Transistor.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2024, v. 18, n. 11, p. 1, doi. 10.1002/pssr.202400075
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- Publication type:
- Article
4
Propagation Properties of Partially Coherent Flat-Topped Beam Rectangular Arrays in Plasma and Atmospheric Turbulence.
- Published in:
- Photonics, 2025, v. 12, n. 1, p. 89, doi. 10.3390/photonics12010089
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- Publication type:
- Article
5
Second-Order Statistics of Partially Coherent Beams with Laguerre Non-Uniform Coherence Properties under Turbulence.
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- Photonics, 2023, v. 10, n. 7, p. 837, doi. 10.3390/photonics10070837
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- Publication type:
- Article
6
Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries.
- Published in:
- Frontiers of Optoelectronics, 2025, v. 18, n. 1, p. 1, doi. 10.1007/s12200-025-00148-4
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- Publication type:
- Article
7
Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer.
- Published in:
- Semiconductor Technology / Bandaoti Jishu, 2024, v. 45, n. 7, p. 1, doi. 10.1088/1674-4926/24010025
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- Publication type:
- Article