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Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam Epitaxy.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 909, doi. 10.3390/nano14110909
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- Article
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam.
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- Crystals (2073-4352), 2024, v. 14, n. 8, p. 724, doi. 10.3390/cryst14080724
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- Article
The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
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- Crystals (2073-4352), 2024, v. 14, n. 5, p. 414, doi. 10.3390/cryst14050414
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- Article
Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy.
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- Crystals (2073-4352), 2023, v. 13, n. 11, p. 1557, doi. 10.3390/cryst13111557
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- Article