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Avalanche Breakdown in 4H-SiC Schottky Diodes: Reliability Aspects.
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- Technical Physics, 2020, v. 65, n. 12, p. 2041, doi. 10.1134/S1063784220120117
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- Article
Investigation of the Turn-off Process of an Integrated Thyristor with an Embedded Control System.
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- Instruments & Experimental Techniques, 2019, v. 62, n. 4, p. 493, doi. 10.1134/S0020441219030163
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- Article
Numerical and Experimental Study of an Optimized p-SOS Diode.
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- Technical Physics, 2019, v. 64, n. 3, p. 373, doi. 10.1134/S1063784219030186
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- Article
Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p<sup>+</sup>−i−n<sup>+</sup> Diode.
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- Technical Physics, 2018, v. 63, n. 6, p. 928, doi. 10.1134/S1063784218060130
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- Article
Experimental Observation of Delayed Impact-Ionization Avalanche Breakdown in Semiconductor Structures without <italic>p</italic>-<italic>n</italic> Junctions.
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- Technical Physics Letters, 2018, v. 44, n. 2, p. 160, doi. 10.1134/S1063785018020177
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- Article
Generation of High-Voltage Pulses by Sharp-Recovery SiC Drift Diodes (n-Base versus p-Base Diodes).
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- Technical Physics, 2018, v. 63, n. 1, p. 86, doi. 10.1134/S1063784218010152
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- Article
The Numerical Simulation of the Nanosecond Switching of a p-SOS Diode.
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- Technical Physics, 2017, v. 62, n. 12, p. 1787, doi. 10.1134/S1063784217120192
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- Article
Si<sub>1-x</sub>Gex Single Crystals Grown by the Czochralski Method: Defects and Electrical Properties.
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- Acta Physica Polonica: A, 2013, v. 124, n. 2, p. 239, doi. 10.12693/APhysPolA.124.239
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- Article
Ultrafast turn-off of high currents by field-controlled integrated thyristor.
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- Technical Physics Letters, 2010, v. 36, n. 10, p. 926, doi. 10.1134/S1063785010100159
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- Article
Increasing the operating frequency in high-power distributed microgate bipolar switches.
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- Technical Physics Letters, 2010, v. 36, n. 10, p. 945, doi. 10.1134/S1063785010100214
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- Article
Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding.
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- Semiconductors, 2010, v. 44, n. 8, p. 1101, doi. 10.1134/S1063782610080269
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- Article
Excess leakage currents in high-voltage 4 H-SiC Schottky diodes.
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- Semiconductors, 2010, v. 44, n. 5, p. 653, doi. 10.1134/S1063782610050180
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- Article
Distributed microgate bipolar switches: Onset conditions for dynamic breakdown at turn-off.
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- Technical Physics, 2009, v. 54, n. 10, p. 1481, doi. 10.1134/S1063784209100120
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- Article
Experimental 4 H-SiC junction-barrier Schottky (JBS) diodes.
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- Semiconductors, 2009, v. 43, n. 9, p. 1209, doi. 10.1134/S106378260909019X
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- Article
High-voltage (1800 V) planar 4 H-SiC p-n junctions with floating guard rings.
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- Semiconductors, 2009, v. 43, n. 4, p. 505, doi. 10.1134/S1063782609040186
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- Article
Current-voltage characteristics of Si/Si<sub>1 − x </sub>Ge<sub> x </sub> heterodiodes fabricated by direct bonding.
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- Technical Physics Letters, 2008, v. 34, n. 12, p. 1027, doi. 10.1134/S1063785008120110
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- Article
Pulsed breakdown of 4 H-SiC Schottky diodes terminated with a boron-implanted p-n junction.
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- Semiconductors, 2008, v. 42, n. 7, p. 858, doi. 10.1134/S1063782608070178
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- Article
Decreasing dynamic turn-off losses in high-power distributed microgate bipolar switches.
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- Technical Physics Letters, 2008, v. 34, n. 5, p. 435, doi. 10.1134/S1063785008050222
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- Article
Determination of the characteristic length of thickness fluctuations for a tunneling-thin insulator in MIS structures from electrical data.
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- Semiconductors, 2007, v. 41, n. 10, p. 1181, doi. 10.1134/S1063782607100107
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- Article
Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding.
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- Semiconductors, 2007, v. 41, n. 8, p. 921, doi. 10.1134/S1063782607080106
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- Article
Low-temperature (77 K) impurity breakdown in p-type 4 H-SiC.
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- Semiconductors, 2007, v. 41, n. 5, p. 542, doi. 10.1134/S1063782607050120
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- Article
White electroluminescence from ZnO/GaN structures.
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- Semiconductors, 2007, v. 41, n. 5, p. 564, doi. 10.1134/S106378260705017X
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- Article
Generating small plasma clouds by electric pulses with a 20-ps leading front width.
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- Technical Physics Letters, 2007, v. 33, n. 4, p. 299, doi. 10.1134/S1063785007040086
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- Article
Addressing a model of multistreamer switching in high-voltage silicon p-n junctions above the Zener breakdown threshold.
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- Technical Physics Letters, 2007, v. 33, n. 2, p. 180, doi. 10.1134/S1063785007020265
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- Article
Current-voltage characteristics of Al/SiO<sub>2</sub>/ p-Si MOS tunnel diodes with a spatially nonuniform oxide thickness.
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- Semiconductors, 2006, v. 40, n. 9, p. 1109, doi. 10.1134/S1063782606090223
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- Article
Switching characteristics of an MOSFET-controlled high-power integrated thyristor.
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- Technical Physics, 2006, v. 51, n. 5, p. 609, doi. 10.1134/S1063784206050112
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- Article
Direct bonding of silicon carbide wafers with a regular relief at the interface.
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- Technical Physics Letters, 2006, v. 32, n. 5, p. 453, doi. 10.1134/S1063785006050245
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- Article
Influence of insulator thickness nonuniformity on the switching of the Al/SiO<sub>2</sub>/ n-Si tunnel MOS structure at reverse bias.
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- Semiconductors, 2006, v. 40, n. 3, p. 309, doi. 10.1134/S1063782606030109
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- Article
Laser deposition of gallium nitride films.
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- Technical Physics Letters, 2006, v. 32, n. 3, p. 197, doi. 10.1134/S1063785006030059
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- Article
On the Effect of Transverse Quantum Confinement on the Electrical Characteristics of a Submicrometer-Sized Tunnel MOS Structure.
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- Semiconductors, 2005, v. 39, n. 12, p. 1381, doi. 10.1134/1.2140308
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- Article
“Ideal” Static Breakdown in High-Voltage (1 kV) 4H-SiC p–n Junction Diodes with Guard Ring Termination.
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- Semiconductors, 2005, v. 39, n. 12, p. 1426, doi. 10.1134/1.2140318
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- Article
A Ferroelectric Field Effect Transistor Based on a Pb(Zr<sub>x</sub>Ti<sub>1 – </sub><sub>x</sub>)O<sub>3</sub>/SnO<sub>2</sub> Heterostructure.
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- Semiconductors, 2005, v. 39, n. 7, p. 856, doi. 10.1134/1.1992648
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- Article
Static and Dynamic Characteristics of an MOS-Controlled High-Power Integrated Thyristor.
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- Technical Physics, 2005, v. 50, n. 7, p. 896, doi. 10.1134/1.1994971
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- Article
Formation of the Space Charge Region in Diffusion p–n Junctions under High-Density Current Interruption.
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- Technical Physics, 2005, v. 50, n. 7, p. 904, doi. 10.1134/1.1994972
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- Article
Luminescence Intensity Monitoring in a MOS Tunnel Structure with Inhomogeneous Thickness of the Insulator.
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- Technical Physics Letters, 2005, v. 31, n. 4, p. 336, doi. 10.1134/1.1920389
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- Article
Influence of the Insulator Thickness Inhomogeneity on the Current–Voltage Characteristics of Tunneling MOS Structures.
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- Technical Physics Letters, 2004, v. 30, n. 12, p. 1020, doi. 10.1134/1.1846845
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- Article
Radiative Recombination in a Silicon MOS Tunnel Structure.
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- Semiconductors, 2004, v. 38, n. 9, p. 1030, doi. 10.1134/1.1797480
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- Article
High-Voltage RSD Switches of Submegaampere Current Pulses of Microsecond Duration.
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- Instruments & Experimental Techniques, 2003, v. 46, n. 1, p. 48, doi. 10.1023/A:1022583206938
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- Article
On the Possibility of Creating a Superfast-Recovery Silicon Carbide Diode.
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- Technical Physics Letters, 2002, v. 28, n. 7, p. 544, doi. 10.1134/1.1498779
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- Article
Direct Bonding of Silicon Wafers with the Concurrent Formation of Diffusion Layers.
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- Technical Physics, 2001, v. 46, n. 6, p. 690, doi. 10.1134/1.1379636
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- Article
Strongly Modulated Conductivity in a Perovskite Ferroelectric Field-Effect Transistor.
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- Technical Physics Letters, 2001, v. 27, n. 1, p. 17, doi. 10.1134/1.1345155
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- Article
The Role of Impact Ionization in the Formation of Reverse Current–Voltage Characteristics of Al–SiO[sub 2]–n-Si Tunnel Structures.
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- Semiconductors, 2000, v. 34, n. 7, p. 775, doi. 10.1134/1.1188071
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- Article
Deep diffusion doping of macroporous silicon.
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- Technical Physics Letters, 1999, v. 25, n. 12, p. 958, doi. 10.1134/1.1262694
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- Article
Regular relief on a silicon surface as a structural defect getter.
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- Technical Physics Letters, 1999, v. 25, n. 1, p. 32, doi. 10.1134/1.1262345
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- Article
Photocurrent amplification in AulSiO2/n-6H-SiC MOS structures with a tunnel-thin insulator
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- Semiconductors, 1998, v. 32, n. 9, p. 1024, doi. 10.1134/1.1187538
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- Article
Degradation of MOS tunnel structures at high current density
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- Semiconductors, 1998, v. 32, n. 6, p. 668, doi. 10.1134/1.1187462
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- Article