Works matching AU Grasser, Tibor

Results: 23

Achieving Portable High Performance for Iterative Solvers on Accelerators.

Published in:

PAMM: Proceedings in Applied Mathematics & Mechanics, 2014, v. 14, n. 1, p. 963, doi. 10.1002/pamm.201410462

By:

Rupp, Karl;
Tillet, Philippe;
Jüngel, Ansgar;
Grasser, Tibor

Publication type:

Article

Miniaturized TEG with thermal generation of free carriers.

Published in:

Physica Status Solidi - Rapid Research Letters, 2007, v. 1, n. 6, p. 241, doi. 10.1002/pssr.200701171

By:

Span, Gerhard;
Wagner, Martin;
Grasser, Tibor;
Holmgren, Lennart

Publication type:

Article

DELMEP: a deep learning algorithm for automated annotation of motor evoked potential latencies.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-34801-9

By:

Milardovich, Diego;
Souza, Victor H.;
Zubarev, Ivan;
Tugin, Sergei;
Nieminen, Jaakko O.;
Bigoni, Claudia;
Hummel, Friedhelm C.;
Korhonen, Juuso T.;
Aydogan, Dogu B.;
Lioumis, Pantelis;
Taherinejad, Nima;
Grasser, Tibor;
Ilmoniemi, Risto J.

Publication type:

Article

Dielectric Properties of Ultrathin CaF2 Ionic Crystals.

Published in:

Advanced Materials, 2021, v. 33, n. 4, p. 1, doi. 10.1002/adma.202006927

By:

Wen, Chao;
Banshchikov, Alexander G.;
Illarionov, Yury Y.;
Frammelsberger, Werner;
Knobloch, Theresia;
Hui, Fei;
Sokolov, Nikolai S.;
Grasser, Tibor;
Lanza, Mario

Publication type:

Article

Dielectric Properties of Ultrathin CaF2 Ionic Crystals.

Published in:

Advanced Materials, 2020, v. 32, n. 34, p. 1, doi. 10.1002/adma.202002525

By:

Wen, Chao;
Banshchikov, Alexander G.;
Illarionov, Yury Y.;
Frammelsberger, Werner;
Knobloch, Theresia;
Hui, Fei;
Sokolov, Nikolai S.;
Grasser, Tibor;
Lanza, Mario

Publication type:

Article

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si 3 N 4).

Published in:

Nanomaterials (2079-4991), 2023, v. 13, n. 16, p. 2286, doi. 10.3390/nano13162286

By:

Wilhelmer, Christoph;
Waldhoer, Dominic;
Cvitkovich, Lukas;
Milardovich, Diego;
Waltl, Michael;
Grasser, Tibor

Publication type:

Article

Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 20, p. 3548, doi. 10.3390/nano12203548

By:

Knobloch, Theresia;
Selberherr, Siegfried;
Grasser, Tibor

Publication type:

Article

Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.

Published in:

Crystals (2073-4352), 2021, v. 11, n. 9, p. 1150, doi. 10.3390/cryst11091150

By:

Hernandez, Yoanlys;
Stampfer, Bernhard;
Grasser, Tibor;
Waltl, Michael

Publication type:

Article

The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters.

Published in:

Crystals (2073-4352), 2020, v. 10, n. 12, p. 1143, doi. 10.3390/cryst10121143

By:

Feil, Maximilian W.;
Huerner, Andreas;
Puschkarsky, Katja;
Schleich, Christian;
Aichinger, Thomas;
Gustin, Wolfgang;
Reisinger, Hans;
Grasser, Tibor

Publication type:

Article

Insulators for 2D nanoelectronics: the gap to bridge.

Published in:

Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-16640-8

By:

Illarionov, Yury Yu.;
Knobloch, Theresia;
Jech, Markus;
Lanza, Mario;
Akinwande, Deji;
Vexler, Mikhail I.;
Mueller, Thomas;
Lemme, Max C.;
Fiori, Gianluca;
Schwierz, Frank;
Grasser, Tibor

Publication type:

Article

Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020).

Published in:

Advanced Functional Materials, 2020, v. 30, n. 18, p. 1, doi. 10.1002/adfm.202070116

By:

Jing, Xu;
Illarionov, Yury;
Yalon, Eilam;
Zhou, Peng;
Grasser, Tibor;
Shi, Yuanyuan;
Lanza, Mario

Publication type:

Article

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects.

Published in:

Advanced Functional Materials, 2020, v. 30, n. 18, p. 1, doi. 10.1002/adfm.201901971

By:

Jing, Xu;
Illarionov, Yury;
Yalon, Eilam;
Zhou, Peng;
Grasser, Tibor;
Shi, Yuanyuan;
Lanza, Mario

Publication type:

Article

A stochastic encoder using point defects in two-dimensional materials.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-54283-1

By:

Ravichandran, Harikrishnan;
Knobloch, Theresia;
Radhakrishnan, Shiva Subbulakshmi;
Wilhelmer, Christoph;
Stepanoff, Sergei P.;
Stampfer, Bernhard;
Ghosh, Subir;
Oberoi, Aaryan;
Waldhoer, Dominic;
Chen, Chen;
Redwing, Joan M.;
Wolfe, Douglas E.;
Grasser, Tibor;
Das, Saptarshi

Publication type:

Article

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS2 FETs.

Published in:

NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00482-9

By:

Panarella, Luca;
Kaczer, Ben;
Smets, Quentin;
Tyaginov, Stanislav;
Saraza Canflanca, Pablo;
Vici, Andrea;
Verreck, Devin;
Schram, Tom;
Lin, Dennis;
Knobloch, Theresia;
Grasser, Tibor;
Lockhart de la Rosa, César;
Kar, Gouri S.;
Afanas'ev, Valeri

Publication type:

Article

An ab initio study on resistance switching in hexagonal boron nitride.

Published in:

NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00340-6

By:

Ducry, Fabian;
Waldhoer, Dominic;
Knobloch, Theresia;
Csontos, Miklos;
Jimenez Olalla, Nadia;
Leuthold, Juerg;
Grasser, Tibor;
Luisier, Mathieu

Publication type:

Article

Special Issue on Miniaturized Transistors, Volume II.

Published in:

Micromachines, 2022, v. 13, n. 4, p. N.PAG, doi. 10.3390/mi13040603

By:

Filipovic, Lado;
Grasser, Tibor

Publication type:

Article

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.

Published in:

Micromachines, 2020, v. 11, n. 4, p. 446, doi. 10.3390/mi11040446

By:

Stampfer, Bernhard;
Schanovsky, Franz;
Grasser, Tibor;
Waltl, Michael

Publication type:

Article

Editorial for the Special Issue on Miniaturized Transistors.

Published in:

2019

By:

Filipovic, Lado;
Grasser, Tibor

Publication type:

Editorial

Modeling of negative bias temperature instability.

Published in:

Journal of Telecommunications & Information Technology, 2007, v. 2007, n. 2, p. 92, doi. 10.26636/jtit.2007.2.814

By:

Grasser, Tibor;
Selberherr, Siegfried

Publication type:

Article

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Published in:

Advanced Materials, 2022, v. 34, n. 48, p. 1, doi. 10.1002/adma.202201082

By:

Waltl, Michael;
Knobloch, Theresia;
Tselios, Konstantinos;
Filipovic, Lado;
Stampfer, Bernhard;
Hernandez, Yoanlys;
Waldhör, Dominic;
Illarionov, Yury;
Kaczer, Ben;
Grasser, Tibor

Publication type:

Article

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS2 FETs.

Published in:

Advanced Electronic Materials, 2024, v. 10, n. 11, p. 1, doi. 10.1002/aelm.202400152

By:

Patoary, Naim Hossain;
Mamun, Fahad Al;
Xie, Jing;
Grasser, Tibor;
Sanchez Esqueda, Ivan

Publication type:

Article

INTRODUCTION.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 3, p. iii, doi. 10.1142/S0129156403001995

By:

Grasser, Tibor

Publication type:

Article

HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS.

Published in:

International Journal of High Speed Electronics & Systems, 2003, v. 13, n. 3, p. 873, doi. 10.1142/S012915640300206X

By:

Grasser, Tibor;
Kosina, Hans;
Selberherr, Siegfried

Publication type:

Article

Works matching AU Grasser, Tibor

Achieving Portable High Performance for Iterative Solvers on Accelerators.

Miniaturized TEG with thermal generation of free carriers.

DELMEP: a deep learning algorithm for automated annotation of motor evoked potential latencies.

Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic Crystals.

Dielectric Properties of Ultrathin CaF<sub>2</sub> Ionic Crystals.

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si 3 N 4).

Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials.

Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies.

The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device Parameters.

Insulators for 2D nanoelectronics: the gap to bridge.

Field Effect Transistors: Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects (Adv. Funct. Mater. 18/2020).

Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects.

A stochastic encoder using point defects in two-dimensional materials.

Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS<sub>2</sub> FETs.

An ab initio study on resistance switching in hexagonal boron nitride.

Special Issue on Miniaturized Transistors, Volume II.

Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors.

Editorial for the Special Issue on Miniaturized Transistors.

Modeling of negative bias temperature instability.

Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?

Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS<sub>2</sub> FETs.

INTRODUCTION.

HOT CARRIER EFFECTS WITHIN MACROSCOPIC TRANSPORT MODELS.