Found: 21
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Effect of Dendritic Inhomogeneity on the Thermoelectric Properties of Bi<sub>0.88</sub>Sb<sub>0.12</sub> Crystals.
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- Semiconductors, 2023, v. 57, n. 9, p. 389, doi. 10.1134/S1063782623060076
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- Article
On the Galvanomagnetic Properties and Thermoelectric Power of Ultrathin Films of the Bismuth–Antimony System on a Mica Substrate.
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- Semiconductors, 2022, v. 56, n. 5, p. 310, doi. 10.1134/S1063782622050037
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- Article
Deformation of Thin Films of Semimetals by the Dome Bending Method of the Substrate.
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- Semiconductors, 2022, v. 56, n. 1, p. 22, doi. 10.1134/S1063782622020142
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- Article
Galvanomagnetic Properties of Bismuth–Antimony Films under Conditions of Plane Tensile Strain.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 4, p. 777, doi. 10.1134/S1027451021040066
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- Article
Effect of an Antimony Sublayer on the Structure and Galvanomagnetic Properties of Thin Bismuth–Antimony Films (3 and 5 at % Sb) on Mica Substrates.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 4, p. 841, doi. 10.1134/S1027451021040273
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- Article
Thermoelectric Power оf Thin Bismuth Films оn Mica.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2021, v. 15, n. 3, p. 467, doi. 10.1134/S1027451021030095
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- Article
Thermoelectric and Thermoelectrokinetic Effects in Colloid Systems that Simulate Biological Liquids of Living Organisms.
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- Technical Physics, 2020, v. 65, n. 10, p. 1580, doi. 10.1134/S1063784220100205
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- Article
On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2020, v. 14, n. 5, p. 913, doi. 10.1134/S1027451020050055
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- Article
Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates.
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- Semiconductors, 2019, v. 53, n. 6, p. 727, doi. 10.1134/S1063782619060046
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- Article
Thermoelectric and Thermoelectrokinetic Phenomena in Colloidal Solutions.
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- Semiconductors, 2019, v. 53, n. 6, p. 756, doi. 10.1134/S1063782619060228
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- Article
The Thermoelectric Power of Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K.
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- Semiconductors, 2019, v. 53, n. 5, p. 589, doi. 10.1134/S1063782619050257
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- Article
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K.
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- Semiconductors, 2019, v. 53, n. 5, p. 593, doi. 10.1134/S1063782619050105
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- Article
The Band-Structure Parameters of Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients.
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- Semiconductors, 2019, v. 53, n. 5, p. 611, doi. 10.1134/S1063782619050269
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- Article
Thermoelectric and Thermoelectrokinetic Phenomena in Liquid Biological Systems.
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- Technical Physics, 2018, v. 63, n. 10, p. 1415, doi. 10.1134/S1063784218100122
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- Article
Galvanomagnetic Properties of Bi<sub>95</sub>Sb<sub>5</sub> Thin Films on Substrates with Different Thermal Expansions.
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- Technical Physics Letters, 2018, v. 44, n. 6, p. 487, doi. 10.1134/S1063785018060056
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- Article
Electron–Plasmon Interaction in Acceptor-Doped Bismuth Crystals.
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- Semiconductors, 2002, v. 36, n. 9, p. 971, doi. 10.1134/1.1507274
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- Article
Optical Effects Caused by Coincidence between the Energies of the Plasma Oscillations and the Band-to-Band Transition in Bismuth Crystals Doped with an Acceptor Impurity.
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- Optics & Spectroscopy, 2002, v. 92, n. 5, p. 710, doi. 10.1134/1.1481136
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- Article
Temperature Dependence of Plasma-Reflection Spectra of Bismuth–Antimony Crystals.
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- Semiconductors, 2001, v. 35, n. 6, p. 703, doi. 10.1134/1.1379409
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- Article
Reflection Spectra of Doped Bismuth–Antimony Crystals in the Far-Infrared Region of the Spectrum.
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- Semiconductors, 2001, v. 35, n. 2, p. 149, doi. 10.1134/1.1349921
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- Article
Magneto-Optical Study of Bismuth at 80–280 K.
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- Semiconductors, 2000, v. 34, n. 11, p. 1287, doi. 10.1134/1.1325424
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- Article
The magnetoplasma effect in single crystals of antimony at T>=80 K.
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- Semiconductors, 1998, v. 32, n. 11, p. 1173, doi. 10.1134/1.1187585
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- Article