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Bulk GaN Layers Grown on Oxidized Silicon by Vapor-Phase Epitaxy in a Hydride–Chloride System.
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- Technical Physics Letters, 2005, v. 31, n. 5, p. 367, doi. 10.1134/1.1931770
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- Article
Mechanical properties of pure and doped InP single crystals determined under local loading.
- Published in:
- Semiconductors, 1997, v. 31, n. 2, p. 139, doi. 10.1134/1.1187095
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- Article
About the nature of temperature hardening of ionic crystals with NaCl lattice.
- Published in:
- Crystal Research & Technology, 1985, v. 20, n. 11, p. K113, doi. 10.1002/crat.2170201122
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- Article
Microharness and dislocation mobility in ionic crystals.
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- Crystal Research & Technology, 1984, v. 19, n. 11, p. 1529, doi. 10.1002/crat.2170191124
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- Article