Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.Published in:Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390By:Lysenko, V. S.;Tyagulskiı, I. P.;Osiyuk, I. N.;Nazarov, A. N.;Vovk, Ya. N.;Gomenyuk, Yu. V.;Terukov, E. I.;Kon’kov, O. I.Publication type:Article