Effect of Erbium on Electronic Traps in PECVD-grown a-Si:H(Er)/c-Si Structures.

Published in:

Semiconductors, 2001, v. 35, n. 6, p. 621, doi. 10.1134/1.1379390

By:

• Lysenko, V. S.;
• Tyagulskiı, I. P.;
• Osiyuk, I. N.;
• Nazarov, A. N.;
• Vovk, Ya. N.;
• Gomenyuk, Yu. V.;
• Terukov, E. I.;
• Kon’kov, O. I.

Publication type:

Article