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Mixed Type of the Magnetic Order in Intrinsic Magnetic Topological Insulators Mn(Bi,Sb)2Te4.
Published in:
JETP Letters, 2022, v. 116, n. 11, p. 817, doi. 10.1134/S0021364022602445
By:
- Glazkova, D. A.;
- Estyunin, D. A.;
- Klimovskikh, I. I.;
- Rybkina, A. A.;
- Golovchanskiy, I. A.;
- Tereshchenko, O. E.;
- Kokh, K. A.;
- Shchetinin, I. V.;
- Golyashov, V. A.;
- Shikin, A. M.
Publication type:
Article
Erratum to: Several Articles in JETP Letters.
Published in:
2022
By:
- Nizamov, B. A.;
- Pshirkov, M. S.;
- Maydykovskiy, A. I.;
- Mamonov, E. A.;
- Mitetelo, N. V.;
- Soria, S.;
- Murzina, T. V.;
- Shvetsov, O. O.;
- Barash, Yu. S.;
- Timonina, A. V.;
- Kolesnikov, N. N.;
- Deviatov, E. V.;
- Volovik, G. E.;
- Glazkova, D. A.;
- Estyunin, D. A.;
- Klimovskikh, I. I.;
- Makarova, T. P.;
- Tereshchenko, O. E.;
- Kokh, K. A.;
- Golyashov, V. A.
Publication type:
Correction Notice
Electronic Structure of Magnetic Topological Insulators Mn(Bi1 –xSbx)2Te4 with Various Concentration of Sb Atoms.
Published in:
JETP Letters, 2022, v. 115, n. 5, p. 286, doi. 10.1134/S0021364022100083
By:
- Glazkova, D. A.;
- Estyunin, D. A.;
- Klimovskikh, I. I.;
- Makarova, T. P.;
- Tereshchenko, O. E.;
- Kokh, K. A.;
- Golyashov, V. A.;
- Koroleva, A. V.;
- Shikin, A. M.
Publication type:
Article
Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi1.09Gd0.06Sb0.85Te3.
Published in:
Journal of Experimental & Theoretical Physics, 2019, v. 129, n. 3, p. 404, doi. 10.1134/S106377611908003X
By:
- Filnov, S. O.;
- Surnin, Yu. A.;
- Koroleva, A. V.;
- Klimovskikh, I. I.;
- Estyunin, D. A.;
- Varykhalov, A. Yu.;
- Bokai, K. A.;
- Kokh, K. A.;
- Tereshchenko, O. E.;
- Golyashov, V. A.;
- Shevchenko, E. V.;
- Shikin, A. M.
Publication type:
Article
Topology of PbSnTe:In Layers Versus Indium Concentration.
Published in:
Technical Physics, 2021, v. 66, n. 7, p. 878, doi. 10.1134/S1063784221060086
By:
- Ishchenko, D. V.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Klimov, A. E.;
- Loginov, A. B.;
- Loginov, B. A.;
- Pashchin, N. S.;
- Tarasov, A. S.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.
Publication type:
Article
Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion.
Published in:
Technical Physics, 2019, v. 64, n. 11, p. 1704, doi. 10.1134/S1063784219110264
By:
- Tarasov, A. S.;
- Ishchenko, D. V.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Klimov, A. E.;
- Pashchin, N. S.;
- Suprun, S. P.;
- Fedosenko, E. V.;
- Sherstyakova, V. N.;
- Tereshchenko, O. E.
Publication type:
Article
Investigation of Surface Magnetism in Systems Based on MnBi2Te4 Using the Magneto-Optical Kerr Effect.
Published in:
Crystallography Reports, 2024, v. 69, n. 1, p. 79, doi. 10.1134/S1063774523601296
By:
- Glazkova, D. A.;
- Estyunin, D. A.;
- Tarasov, A. S.;
- Kosyrev, N. N.;
- Komarov, V. A.;
- Patrin, G. S.;
- Golyashov, V. A.;
- Tereshchenko, O. E.;
- Kokh, K. A.;
- Koroleva, A. V.;
- Shikin, A. M.
Publication type:
Article
Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility.
Published in:
Journal of Materials Science, 2021, v. 56, n. 15, p. 9330, doi. 10.1007/s10853-021-05836-y
By:
- Antonova, I. V.;
- Nebogatikova, N. A.;
- Stepina, N. P.;
- Volodin, V. A.;
- Kirienko, V. V.;
- Rybin, M. G.;
- Obrazstova, E. D.;
- Golyashov, V. A.;
- Kokh, K. A.;
- Tereshchenko, O. E.
Publication type:
Article
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Matyushenko, E. V.;
- Neizvestny, I. G.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Epov, V.S.
Publication type:
Article
Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe2.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1051, doi. 10.1134/S1063782620090146
By:
- Kaveev, A. K.;
- Banshchikov, A. G.;
- Terpitskiy, A. N.;
- Golyashov, V. A.;
- Tereshchenko, O. E.;
- Kokh, K. A.;
- Estyunin, D. A.;
- Shikin, A. M.
Publication type:
Article
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Epov, V. S.;
- Tereshchenko, O. E.
Publication type:
Article
Wet Chemical Methods of HgCdTe Surface Treatment.
Published in:
Journal of Structural Chemistry, 2023, v. 64, n. 3, p. 519, doi. 10.1134/S0022476623030150
By:
- Zakirov, E. R.;
- Kesler, V. G.;
- Sidorov, G. Y.;
- Golyashov, V. A.;
- Tereshchenko, O. E.;
- Marin, D. V.;
- Yakushev, M. V.
Publication type:
Article
Stability of the (0001) surface of the BiSe topological insulator.
Published in:
JETP Letters, 2011, v. 94, n. 6, p. 465, doi. 10.1134/S0021364011180159
By:
- Tereshchenko, O.;
- Kokh, K.;
- Atuchin, V.;
- Romanyuk, K.;
- Makarenko, S.;
- Golyashov, V.;
- Kozhukhov, A.;
- Prosvirin, I.;
- Shklyaev, A.
Publication type:
Article

Found: 13

Mixed Type of the Magnetic Order in Intrinsic Magnetic Topological Insulators Mn(Bi,Sb)<sub>2</sub>Te<sub>4</sub>.

Erratum to: Several Articles in JETP Letters.

Electronic Structure of Magnetic Topological Insulators Mn(Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>4</sub> with Various Concentration of Sb Atoms.

Magnetic and Electronic Properties of Gd-Doped Topological Insulator Bi<sub>1.09</sub>Gd<sub>0.06</sub>Sb<sub>0.85</sub>Te<sub>3</sub>.

Topology of PbSnTe:In Layers Versus Indium Concentration.

Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion.

Investigation of Surface Magnetism in Systems Based on MnBi<sub>2</sub>Te<sub>4</sub> Using the Magneto-Optical Kerr Effect.

Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility.

Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.

Energy-Gap Opening Near the Dirac Point after the Deposition of Cobalt on the (0001) Surface of the Topological Insulator BiSbTeSe<sub>2</sub>.

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.

Wet Chemical Methods of HgCdTe Surface Treatment.

Stability of the (0001) surface of the BiSe topological insulator.