Works by Golubok, A. O.
Results: 19
Indirect Detection of the Light Emission in the Local Tunnel Junction.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 3, p. 1, doi. 10.1002/pssr.201900607
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- Article
High-aspect ratio probes with selected geometry for advanced MFM measurements.
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- Ferroelectrics, 2020, v. 560, n. 1, p. 123, doi. 10.1080/00150193.2020.1722892
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- Article
Study of the surface of diamondlike carbon films doped with copper.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 800, doi. 10.1134/1.1262273
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- Article
Fabrication of InAs quantum dots on silicon.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 290, doi. 10.1134/1.1262087
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- Article
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures by submonolayer migration-stimulated epitaxy.
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- Technical Physics Letters, 1997, v. 23, n. 11, p. 893, doi. 10.1134/1.1261923
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- Article
Electrically‐Driven Light Source Embedded in a GaP Nanowaveguide for Visible‐Range Photonics on Chip.
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- Advanced Optical Materials, 2024, v. 12, n. 25, p. 1, doi. 10.1002/adom.202400581
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- Article
Parametric Optothermal Modulation of Carbon Nanooscillator Decorated with Mie Resonant Silicon Particle.
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- Advanced Optical Materials, 2024, v. 12, n. 19, p. 1, doi. 10.1002/adom.202400228
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- Article
Composition Analysis of Coherent Nanoinsertions of Solid Solutions on the Basis of High-Resolution Electron Micrographs.
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- Semiconductors, 2001, v. 35, n. 3, p. 347, doi. 10.1134/1.1356160
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- Article
Investigation of Surface Morphology of Copper-Modified Amorphous Carbon Films.
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- Semiconductors, 2001, v. 35, n. 2, p. 230, doi. 10.1134/1.1349938
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- Article
Scanning Tunneling Microscopy of Films of Amorphous Carbon Doped with Copper.
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- Semiconductors, 2000, v. 34, n. 2, p. 217, doi. 10.1134/1.1187935
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- Article
Distinctive features of molecular-beam epitaxial growth of silicon on Si (100) surfaces in the presence of arsenic.
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- Semiconductors, 1999, v. 33, n. 10, p. 1054, doi. 10.1134/1.1187863
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- Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
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- Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
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- Article
Self-organization of quantum dots in multilayer InAs/GaAs and InGaAs/GaAs structures in submonolayer epitaxy.
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- Semiconductors, 1999, v. 33, n. 6, p. 677, doi. 10.1134/1.1187755
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- Article
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams.
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- Semiconductors, 1997, v. 31, n. 8, p. 768, doi. 10.1134/1.1187245
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- Article
Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface.
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- Technical Physics Letters, 2000, v. 26, n. 9, p. 781, doi. 10.1134/1.1315492
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- Article
Resonant Mass Detector Based on Carbon Nanowhiskers with Traps for Nanoobjects Weighing.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 21, p. N.PAG, doi. 10.1002/pssa.201800046
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- Article
Q-factor study of nanomechanical system 'metal tip - carbon nanowhisker' at low and ambient pressure.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 9, p. 2375, doi. 10.1002/pssa.201533042
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- Article
Behavioral Features of the Approach Curve of a Scanning Ion-Conductance Microscope.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 3, p. 585, doi. 10.1134/S1027451023030096
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- Article
On the Spatial Resolution of a Piezoresonance Probe Sensor with a Tungsten Needle.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2023, v. 17, n. 3, p. 578, doi. 10.1134/S1027451023030059
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- Article