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An instrument for measuring the intensity and dose of cancerigenic ultraviolet radiation.
- Published in:
- Instruments & Experimental Techniques, 2010, v. 53, n. 5, p. 743, doi. 10.1134/S0020441210050234
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- Article
Mechanisms of current flow in metal-semiconductor ohmic contacts.
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- Semiconductors, 2007, v. 41, n. 11, p. 1263, doi. 10.1134/S1063782607110012
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- Article
Mechanism of current flow in alloyed ohmic In/GaAs contacts.
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- Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235
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- Article
The mechanism of current flow in an alloyed In-GaN ohmic contact.
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- Semiconductors, 2006, v. 40, n. 10, p. 1173, doi. 10.1134/S1063782606100095
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- Article
Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.
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- Technical Physics, 2001, v. 46, n. 9, p. 1128, doi. 10.1134/1.1404165
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- Article
Temperature Dependence of the Quantum Efficiency of 4H-SiC-Based Schottky Photodiodes.
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- Technical Physics Letters, 2001, v. 27, n. 9, p. 776, doi. 10.1134/1.1407356
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- Article
Effect of the electric field in the space-charge layer on the efficiency of short-wave photoelectric conversion in GaAs Schottky diodes.
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- Semiconductors, 1997, v. 31, n. 10, p. 1053, doi. 10.1134/1.1187024
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- Article
Photoelectric effect in GaAs-based surface-barrier structures: Temperature dependence of the short-wavelength quantum efficiency.
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- Semiconductors, 1997, v. 31, n. 5, p. 476, doi. 10.1134/1.1187198
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- Article