Found: 11
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Hybrid Devices by Selective and Conformal Deposition of PtSe<sub>2</sub> at Low Temperatures.
- Published in:
- Advanced Functional Materials, 2021, v. 31, n. 46, p. 1, doi. 10.1002/adfm.202103936
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- Article
Coexistence of Negative and Positive Photoconductivity in Few‐Layer PtSe<sub>2</sub> Field‐Effect Transistors.
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- Advanced Functional Materials, 2021, v. 31, n. 43, p. 1, doi. 10.1002/adfm.202105722
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- Article
Imaging and identification of point defects in PtTe2.
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- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-020-00196-8
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- Article
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe<sub>2</sub> films grown at 400 °C.
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- NPJ 2D Materials & Applications, 2019, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41699-019-0116-4
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Influence of nitrogen concentration on electrical, mechanical, and structural properties of tantalum nitride thin films prepared via DC magnetron sputtering.
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- Applied Physics A: Materials Science & Processing, 2022, v. 128, n. 5, p. 1, doi. 10.1007/s00339-022-05501-4
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- Article
n‐Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory.
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- Advanced Electronic Materials, 2024, v. 10, n. 8, p. 1, doi. 10.1002/aelm.202400010
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- Article
Hysteresis in As-Synthesized MoS 2 Transistors: Origin and Sensing Perspectives.
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- Micromachines, 2021, v. 12, n. 6, p. 646, doi. 10.3390/mi12060646
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- Article
High Hole Mobility Polycrystalline GaSb Thin Films.
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- Crystals (2073-4352), 2021, v. 11, n. 11, p. 1348, doi. 10.3390/cryst11111348
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- Article
Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C.
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- Crystals (2073-4352), 2021, v. 11, n. 2, p. 160, doi. 10.3390/cryst11020160
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Modeling the effects of interface traps on passive quenching of a Ge/Si geiger mode avalanche photodiode.
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- Optical & Quantum Electronics, 2012, v. 44, n. 3-5, p. 119, doi. 10.1007/s11082-011-9533-0
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- Article
Multilayer WS<sub>2</sub> for low-power visible and near-infrared phototransistors.
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- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04000-0
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- Article