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Interface Properties of MoS 2 van der Waals Heterojunctions with GaN.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 2, p. 133, doi. 10.3390/nano14020133
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Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2837, doi. 10.3390/nano13212837
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- Article
On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 10, p. 1, doi. 10.1002/pssb.202300262
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- Article
On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition.
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- Physica Status Solidi (B), 2023, v. 260, n. 10, p. 1, doi. 10.1002/pssb.202370030
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- Article
Interface Structure and Doping of Chemical Vapor Deposition‐Grown MoS<sub>2</sub> on 4H–SiC by Microscopic Analyses and Ab Initio Calculations.
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- Physica Status Solidi - Rapid Research Letters, 2023, v. 17, n. 10, p. 1, doi. 10.1002/pssr.202300218
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- Article
Al 2 O 3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.
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- Materials (1996-1944), 2023, v. 16, n. 16, p. 5638, doi. 10.3390/ma16165638
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- Article
Emerging SiC Applications beyond Power Electronic Devices.
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- Micromachines, 2023, v. 14, n. 6, p. 1200, doi. 10.3390/mi14061200
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- Article
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS<sub>2</sub> on Ion Implantation Doped 4H‐SiC.
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- Advanced Materials Interfaces, 2023, v. 10, n. 1, p. 1, doi. 10.1002/admi.202201502
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- Article
Electron Irradiation Effects on Single‐Layer MoS<sub>2</sub> Obtained by Gold‐Assisted Exfoliation.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 21, p. 1, doi. 10.1002/pssa.202200096
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- Article
Esaki Diode Behavior in Highly Uniform MoS<sub>2</sub>/Silicon Carbide Heterojunctions.
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- Advanced Materials Interfaces, 2022, v. 9, n. 22, p. 1, doi. 10.1002/admi.202200915
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- Article
Out‐of‐Glovebox Integration of Recyclable Europium‐Doped CsPbI<sub>3</sub> in Triple‐Mesoscopic Carbon‐Based Solar Cells Exceeding 9% Efficiency.
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- Solar RRL, 2022, v. 6, n. 8, p. 1, doi. 10.1002/solr.202200267
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- Article
Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiC.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 13, p. 2229, doi. 10.3390/nano12132229
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- Article
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 2, p. 182, doi. 10.3390/nano12020182
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- Article
Materials and Processes for Schottky Contacts on Silicon Carbide.
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- Materials (1996-1944), 2022, v. 15, n. 1, p. 298, doi. 10.3390/ma15010298
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
Substrate-Driven Atomic Layer Deposition of High-κ Dielectrics on 2D Materials.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 22, p. 11052, doi. 10.3390/app112211052
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- Article
Direct Atomic Layer Deposition of Ultrathin Aluminum Oxide on Monolayer MoS<sub>2</sub> Exfoliated on Gold: The Role of the Substrate.
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- Advanced Materials Interfaces, 2021, v. 8, n. 21, p. 1, doi. 10.1002/admi.202101117
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- Article
New Approaches and Understandings in the Growth of Cubic Silicon Carbide.
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- Materials (1996-1944), 2021, v. 14, n. 18, p. 5348, doi. 10.3390/ma14185348
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- Article
Selective Doping in Silicon Carbide Power Devices.
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- Materials (1996-1944), 2021, v. 14, n. 14, p. 3923, doi. 10.3390/ma14143923
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- Article
Epitaxial Graphene on 4H-SiC (0001) as a Versatile Platform for Materials Growth: Mini-Review.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 13, p. 5784, doi. 10.3390/app11135784
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- Article
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1626, doi. 10.3390/nano11061626
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- Article
Preparation of Copper Surface for the Synthesis of Single-Layer Graphene.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1071, doi. 10.3390/nano11051071
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- Article
The Efficient Photocatalytic Degradation of Organic Pollutants on the MnFe 2 O 4 /BGA Composite under Visible Light.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 5, p. 1276, doi. 10.3390/nano11051276
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- Article
A Broadband Polarization-Insensitive Graphene Modulator Based on Dual Built-in Orthogonal Slots Plasmonic Waveguide.
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- Applied Sciences (2076-3417), 2021, v. 11, n. 4, p. 1897, doi. 10.3390/app11041897
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- Article
Fermi-Level Tuning of G-Doped Layers.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 2, p. 505, doi. 10.3390/nano11020505
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- Article
Indium Nitride at the 2D Limit.
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- Advanced Materials, 2021, v. 33, n. 1, p. 1, doi. 10.1002/adma.202006660
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- Article
Improved Electrical and Structural Stability in HTL-Free Perovskite Solar Cells by Vacuum Curing Treatment.
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- Energies (19961073), 2020, v. 13, n. 15, p. 3953, doi. 10.3390/en13153953
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- Article
Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review.
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- Applied Sciences (2076-3417), 2020, v. 10, n. 7, p. 2440, doi. 10.3390/app10072440
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- Article
Conductive Atomic Force Microscopy of Semiconducting Transition Metal Dichalcogenides and Heterostructures.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 4, p. 803, doi. 10.3390/nano10040803
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- Article
Dynamic Modification of Fermi Energy in Single-Layer Graphene by Photoinduced Electron Transfer from Carbon Dots.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 3, p. 528, doi. 10.3390/nano10030528
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- Article
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901171
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- Article
Direct Probing of Grain Boundary Resistance in Chemical Vapor Deposition‐Grown Monolayer MoS<sub>2</sub> by Conductive Atomic Force Microscopy.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 2, p. N.PAG, doi. 10.1002/pssr.201900393
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- Article
Extensive Fermi‐Level Engineering for Graphene through the Interaction with Aluminum Nitrides and Oxides.
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- Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 2, p. N.PAG, doi. 10.1002/pssr.201900399
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- Article
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.
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- Materials (1996-1944), 2019, v. 12, n. 21, p. 3468, doi. 10.3390/ma12213468
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- Article
Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures.
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- Energies (19961073), 2019, v. 12, n. 14, p. 2655, doi. 10.3390/en12142655
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- Article
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review.
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- Energies (19961073), 2019, v. 12, n. 12, p. 2310, doi. 10.3390/en12122310
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- Article
Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al<sub>2</sub>O<sub>3</sub> Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide.
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- Advanced Materials Interfaces, 2019, v. 6, n. 10, p. N.PAG, doi. 10.1002/admi.201900097
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- Article
Nitrogen Soaking Promotes Lattice Recovery in Polycrystalline Hybrid Perovskites.
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- Advanced Energy Materials, 2019, v. 9, n. 12, p. N.PAG, doi. 10.1002/aenm.201803450
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- Article
Graphene‐SiO<sub>2</sub> Interaction from Composites to Doping.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 3, p. N.PAG, doi. 10.1002/pssa.201800540
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- Article
Carbon Dots Dispersed on Graphene/SiO<sub>2</sub>/Si: A Morphological Study.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 3, p. N.PAG, doi. 10.1002/pssa.201800559
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- Article
Fabrication and Characterization of Graphene Heterostructures with Nitride Semiconductors for High Frequency Vertical Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 10, p. 1, doi. 10.1002/pssa.201700653
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- Article
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700613
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- Article
Vertical Transistors Based on 2D Materials: Status and Prospects.
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- Crystals (2073-4352), 2018, v. 8, n. 2, p. 70, doi. 10.3390/cryst8020070
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A Review on Metal Nanoparticles Nucleation and Growth on/in Graphene.
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- Crystals (2073-4352), 2017, v. 7, n. 7, p. 219, doi. 10.3390/cryst7070219
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- Article
Role of the Potential Barrier in the Electrical Performance of the Graphene/SiC Interface.
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- Crystals (2073-4352), 2017, v. 7, n. 6, p. 162, doi. 10.3390/cryst7060162
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- Article
Electrical characterization of trapping phenomena at SiO<sub>2</sub>/SiC and SiO<sub>2</sub>/GaN in MOS-based devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600366
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- Article
Effect of air on oxygen p-doped graphene on SiO<sub>2</sub>.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 9, p. 2341, doi. 10.1002/pssa.201532909
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- Article
Similar Structural Dynamics for the Degradation of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> in Air and in Vacuum.
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- ChemPhysChem, 2015, v. 16, n. 14, p. 3064, doi. 10.1002/cphc.201500374
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A comprehensive study on the physicochemical and electrical properties of Si doped with the molecular doping method.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 8, p. 1685, doi. 10.1002/pssa.201532030
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- Article
Electrical and structural properties of Ti/Al-based contacts on AlGaN/GaN heterostructures with different quality.
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- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1091, doi. 10.1002/pssa.201431636
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- Article