Found: 19
Select item for more details and to access through your institution.
Micromagnetic analysis of a double-barrier synthetic antiferromagnetic MTJ stack.
- Published in:
- Applied Nanoscience, 2015, v. 5, n. 7, p. 771, doi. 10.1007/s13204-014-0378-2
- By:
- Publication type:
- Article
DESIGN OF A MULTI-LAYERED QCA CONFIGURABLE LOGIC BLOCK FOR FPGAs.
- Published in:
- Journal of Circuits, Systems & Computers, 2014, v. 23, n. 6, p. 1, doi. 10.1142/S0218126614500893
- By:
- Publication type:
- Article
Innovative design methodologies in quantum-dot cellular automata.
- Published in:
- International Journal of Circuit Theory & Applications, 2015, v. 43, n. 2, p. 253, doi. 10.1002/cta.1936
- By:
- Publication type:
- Article
Transistor size optimization in digital circuits using ant colony optimization for continuous domain.
- Published in:
- International Journal of Circuit Theory & Applications, 2014, v. 42, n. 6, p. 642, doi. 10.1002/cta.1879
- By:
- Publication type:
- Article
SPIN RELAXATION IN AND STRAINED NANOWIRES.
- Published in:
- SPIN (2010-3247), 2014, v. 4, n. 3, p. -1, doi. 10.1142/S2010324714500039
- By:
- Publication type:
- Article
1-BIT FULL ADDER IMPLEMENTATION USING SINGLE SPIN LOGIC PARADIGM.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 2, p. -1, doi. 10.1142/S2010324712500129
- By:
- Publication type:
- Article
MONTE CARLO SIMULATION OF SPIN RELAXATION IN NANOWIRES AND 2-D CHANNELS OF II-VI SEMICONDUCTORS.
- Published in:
- SPIN (2010-3247), 2012, v. 2, n. 2, p. -1, doi. 10.1142/S2010324712500075
- By:
- Publication type:
- Article
Differentially Graded Junctionless Transistor.
- Published in:
- International Journal of Nanoscience, 2019, v. 18, n. 1, p. N.PAG, doi. 10.1142/S0219581X18500163
- By:
- Publication type:
- Article
Junctionless Tunnel Field Effect Transistor with Nonuniform Doping.
- Published in:
- International Journal of Nanoscience, 2015, v. 14, n. 3, p. -1, doi. 10.1142/S0219581X14500252
- By:
- Publication type:
- Article
A SILICON GERMANIUM GRADED JUNCTIONLESS TRANSISTOR WITH LOW OFF CURRENT.
- Published in:
- International Journal of Nanoscience, 2013, v. 12, n. 6, p. -1, doi. 10.1142/S0219581X13500439
- By:
- Publication type:
- Article
First principle defect study of MoSe field effect transistor.
- Published in:
- Applied Physics B: Lasers & Optics, 2015, v. 119, n. 2, p. 297, doi. 10.1007/s00340-015-6058-4
- By:
- Publication type:
- Article
A NOVEL NINE INPUT MAJORITY GATE DESIGN IN QUANTUM-DOT CELLULAR AUTOMATA.
- Published in:
- Journal of Applied Global Research, 2013, v. 6, n. 17, p. 33
- By:
- Publication type:
- Article
Spin relaxation in bilayer graphene: the role of electron-electron scattering.
- Published in:
- Applied Physics A: Materials Science & Processing, 2016, v. 122, n. 2, p. 1, doi. 10.1007/s00339-016-9595-8
- By:
- Publication type:
- Article
Effects of non-uniform doping on junctionless transistor.
- Published in:
- Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 1, p. 127, doi. 10.1007/s00339-015-9026-2
- By:
- Publication type:
- Article
Leakage current reduction in junctionless tunnel FET using a lightly doped source.
- Published in:
- Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 4, p. 1527, doi. 10.1007/s00339-014-8935-9
- By:
- Publication type:
- Article
Domain wall oscillators.
- Published in:
- Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 1, p. 101, doi. 10.1007/s00339-014-8768-6
- By:
- Publication type:
- Article
A comparative study of SELBOX-JLT and SOI-JLT.
- Published in:
- Applied Physics A: Materials Science & Processing, 2014, v. 117, n. 4, p. 2281, doi. 10.1007/s00339-014-8661-3
- By:
- Publication type:
- Article
Current voltage characteristics modeling of polycrystalline CdTe-CdS solar cells for different grain-sizes of CdTe.
- Published in:
- International Journal of Nanoelectronics & Materials, 2013, v. 6, n. 1, p. 37
- By:
- Publication type:
- Article
EFFECT OF ELECTRIC FIELD, TEMPERATURE AND CORE DIMENSIONS IN III-V COMPOUND CORE-SHELL NANOWIRES.
- Published in:
- NANO, 2014, v. 9, n. 4, p. 1, doi. 10.1142/S1793292014500519
- By:
- Publication type:
- Article