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Luminescence of ZnO Having a Superstoichiometric Content of Oxygen.
- Published in:
- Journal of Applied Spectroscopy, 2003, v. 70, n. 1, p. 95, doi. 10.1023/A:1023228610226
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- Publication type:
- Article
Influence of Random Electric Fields on the Polarization of Deep Centre Electroabsorption.
- Published in:
- Physica Status Solidi (B), 1977, v. 80, n. 2, p. 589, doi. 10.1002/pssb.2220800220
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- Publication type:
- Article
On the question of exciton−phonon complexes in II−VI compounds.
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- Physica Status Solidi (B), 1975, v. 68, n. 2, p. 663, doi. 10.1002/pssb.2220680226
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- Publication type:
- Article
Optical and Electrical Characteristics of p-n Junctions in Zinc Sulfide.
- Published in:
- Physica Status Solidi (B), 1967, v. 21, n. 1, p. K49, doi. 10.1002/pssb.19670210156
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- Publication type:
- Article
Electroluminescence of ZnSCu<sub>2</sub>S Heterojunctions.
- Published in:
- Physica Status Solidi (B), 1967, v. 21, n. 1, p. K45, doi. 10.1002/pssb.19670210155
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- Publication type:
- Article
Excitons Bound to Defect Complexes in Heavily Doped CdS.
- Published in:
- Physica Status Solidi (B), 1991, v. 164, n. 1, p. 207, doi. 10.1002/pssb.2221640121
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- Publication type:
- Article
Excitonic luminescence in CdGa<sub>2</sub>S<sub>4</sub> single crystals.
- Published in:
- Physica Status Solidi (B), 1986, v. 134, n. 1, p. K47, doi. 10.1002/pssb.2221340160
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- Publication type:
- Article
On the Electron-Phonon and Exciton-Phonon Interaction in ZnTe.
- Published in:
- Physica Status Solidi (B), 1978, v. 89, n. 2, p. 603, doi. 10.1002/pssb.2220890234
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- Publication type:
- Article
Luminescence and Optical-Memory model of SrAl<sub>2</sub>O<sub>4</sub>:Eu<sup>2+</sup>,Dy<sup>3+</sup> and Sr<sub>4</sub>Al<sub>14</sub>O<sub>25</sub>:Eu<sup>2+</sup>,Dy<sup>3+</sup>.
- Published in:
- Inorganic Materials, 2009, v. 45, n. 11, p. 1289, doi. 10.1134/S0020168509110181
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- Publication type:
- Article
Tunable SiO<sub>2</sub>/Si-based nanostructures.
- Published in:
- Inorganic Materials, 2009, v. 45, n. 8, p. 900, doi. 10.1134/S0020168509080147
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- Publication type:
- Article
Compensation mechanism for hole conduction in ZnO:N films.
- Published in:
- Inorganic Materials, 2009, v. 45, n. 4, p. 391, doi. 10.1134/S0020168509040116
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- Publication type:
- Article
V<sub>N</sub>-Mg defect complexes as compensating centers in GaN:Mg.
- Published in:
- Inorganic Materials, 2008, v. 44, n. 11, p. 1208, doi. 10.1134/S0020168508110125
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- Publication type:
- Article
Luminescent properties of EuGa<sub>2</sub>S<sub>4</sub>:Er<sup>3+</sup>.
- Published in:
- Inorganic Materials, 2006, v. 42, n. 11, p. 1188, doi. 10.1134/S0020168506110033
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- Publication type:
- Article
Luminescence of ZnO nanorods grown by chemical vapor deposition on (111) Si substrates.
- Published in:
- Inorganic Materials, 2006, v. 42, n. 7, p. 750, doi. 10.1134/S0020168506070119
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- Publication type:
- Article
Luminescence centers in CaS:Er<sup>3+</sup>.
- Published in:
- Inorganic Materials, 2006, v. 42, n. 7, p. 794, doi. 10.1134/S0020168506070181
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- Publication type:
- Article
Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation.
- Published in:
- Inorganic Materials, 2005, v. 41, n. 6, p. 604, doi. 10.1007/s10789-005-0177-y
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- Publication type:
- Article
Infrared Luminescence of Y<sub>2</sub>O<sub>2</sub>S:Er<sup>3+</sup> and Y<sub>2</sub>O<sub>3</sub>:Er<sup>3+</sup>.
- Published in:
- Inorganic Materials, 2004, v. 40, n. 8, p. 840, doi. 10.1023/B:INMA.0000037930.59049.0b
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- Publication type:
- Article
Methods of High-Energy Chemistry in the Technology of Wide-Gap Chalcogenide Semiconductors.
- Published in:
- Inorganic Materials, 2004, v. 40, p. S1, doi. 10.1023/B:INMA.0000036325.88593.d7
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- Publication type:
- Article
Dispersion of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) and Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>InS<sub>2</sub> (0≤x≤0.015) Crystals.
- Published in:
- Semiconductors, 2005, v. 39, n. 7, p. 777, doi. 10.1134/1.1992632
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- Publication type:
- Article
The Electrooptic Effect and Anisotropy of the Refractive Index in Tl<sub>1 – </sub><sub>x</sub>Cu<sub>x</sub>GaSe<sub>2</sub> (0≤x≤0.02) Crystals.
- Published in:
- Semiconductors, 2005, v. 39, n. 7, p. 786, doi. 10.1134/1.1992634
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- Publication type:
- Article
Spontaneous and Stimulated UV Luminescence of ZnO:N at 77 K.
- Published in:
- Semiconductors, 2005, v. 39, n. 6, p. 661, doi. 10.1134/1.1944856
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- Publication type:
- Article
Measurements of Deep Trap Concentration in Diodes with a High Schottky Barrier by Deep-Level Transient Spectroscopy.
- Published in:
- Semiconductors, 2002, v. 36, n. 6, p. 655, doi. 10.1134/1.1485665
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- Publication type:
- Article
Effect of Annealing in Oxygen Radicals on Luminescence and Electrical Conductivity of ZnO:N Films.
- Published in:
- Semiconductors, 2002, v. 36, n. 3, p. 265, doi. 10.1134/1.1461400
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- Publication type:
- Article
Fine Structure of the Edge Ultraviolet Luminescence of GaN:Mg Films Activated in a Nitrogen Plasma and the Electroluminescence of a ZnO–GaN:Mg Heterostructure Based on These Films.
- Published in:
- Semiconductors, 2001, v. 35, n. 6, p. 695, doi. 10.1134/1.1379407
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- Publication type:
- Article
The Edge Ultraviolet Luminescence of GaN:Zn Films Activated in a Nitrogen Plasma.
- Published in:
- Semiconductors, 2001, v. 35, n. 2, p. 144, doi. 10.1134/1.1349920
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- Publication type:
- Article
Observation of Minority-Carrier Traps in Schottky Diodes with a High Barrier and a Compensated Near-Contact Region Using Deep-Level Transient Spectroscopy.
- Published in:
- Semiconductors, 2001, v. 35, n. 1, p. 48, doi. 10.1134/1.1340288
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- Publication type:
- Article
Luminescence and Photoconductivity Caused by Antisite Defects in CdIn.
- Published in:
- Crystal Research & Technology, 1986, v. 21, n. 2, p. 259, doi. 10.1002/crat.2170210218
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- Publication type:
- Article
On the influence of nonstoichiometry on luminescent properties of CdGa.
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- Crystal Research & Technology, 1985, v. 20, n. 6, p. 857, doi. 10.1002/crat.2170200629
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- Publication type:
- Article
In memory of Grigory Dmitrievich Tumanishvili (1925–2007).
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- 2008
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- Publication type:
- Obituary
Structural and electroluminescent properties of n-ZnO/ p-GaN:Mg heterojunctions.
- Published in:
- Inorganic Materials, 2010, v. 46, n. 11, p. 1161, doi. 10.1134/S0020168510110014
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- Publication type:
- Article
Photoluminescence and raman spectra of (GaS)(SmO) crystals.
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- Inorganic Materials, 2010, v. 46, n. 10, p. 1054, doi. 10.1134/S0020168510100043
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- Publication type:
- Article
A new “invisible” IR phosphor based on yttrium and ytterbium phosphates.
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- Inorganic Materials, 2010, v. 46, n. 8, p. 889, doi. 10.1134/S0020168510080169
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- Publication type:
- Article
Luminescence in various classes of Er<sup>3+</sup>-doped inorganic compounds under IR excitation.
- Published in:
- Inorganic Materials, 2010, v. 46, n. 7, p. 770, doi. 10.1134/S0020168510070150
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- Publication type:
- Article
Structure and electrical conductivity of selenium-ion-implanted CdSe films.
- Published in:
- Inorganic Materials, 2010, v. 46, n. 6, p. 598, doi. 10.1134/S0020168510060063
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- Publication type:
- Article
Structure and photoluminescence of ZnGa<sub>2</sub>Se<sub>4</sub>:Eu<sup>2+</sup>.
- Published in:
- Inorganic Materials, 2010, v. 46, n. 5, p. 456, doi. 10.1134/S0020168510050031
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- Publication type:
- Article
Electric-field and temperature effects on electric currents in polycrystalline ZnGa<sub>2</sub>Se<sub>4</sub>.
- Published in:
- Inorganic Materials, 2010, v. 46, n. 2, p. 116, doi. 10.1134/S0020168510020056
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- Publication type:
- Article