Found: 18
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Experimental insight into the third‐order intercepts and nonlinear distortion of GaN HEMTs.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2021, v. 31, n. 2, p. 1, doi. 10.1002/mmce.22513
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- Article
Multibias and temperature dependence of the current‐gain peak in GaN HEMT.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2020, v. 30, n. 4, p. 1, doi. 10.1002/mmce.22129
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- Article
Innovative millimetre‐wave resonators based on slow‐wave coplanar stripline components.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2022, v. 16, n. 7, p. 477, doi. 10.1049/mia2.12260
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- Article
About 250/285 GHz push--push oscillator using differential gate equalisation in digital 65-nm CMOS.
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- IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2019, v. 13, n. 12, p. 2073, doi. 10.1049/iet-map.2018.5308
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- Article
A study of DC and RF transconductance for different technologies of HEMT at low and high temperatures.
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- Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 10, p. 1, doi. 10.1007/s10854-023-10176-5
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- Article
An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology.
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- Micromachines, 2021, v. 12, n. 5, p. 549, doi. 10.3390/mi12050549
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- Article
Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension.
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- Electronics (2079-9292), 2022, v. 11, n. 15, p. 2333, doi. 10.3390/electronics11152333
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- Article
Temperature-Sensitivity of Two Microwave HEMT Devices: AlGaAs/GaAs vs. AlGaN/GaN Heterostructures.
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- Electronics (2079-9292), 2021, v. 10, n. 9, p. 1115, doi. 10.3390/electronics10091115
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- Article
Self-heating phenomena in high-power III-N transistors and new thermal characterization methods developed within EU project TARGET.
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- International Journal of Microwave & Wireless Technologies, 2009, v. 1, n. 2, p. 153, doi. 10.1017/S1759078709990444
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- Article
GaN devices for power amplifier design.
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- International Journal of Microwave & Wireless Technologies, 2009, v. 1, n. 2, p. 137, doi. 10.1017/S1759078709000178
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- Article
Nonlinear modeling of InP devices for W-band applications.
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- International Journal of Microwave & Wireless Technologies, 2009, v. 1, n. 2, p. 145, doi. 10.1017/S1759078709000099
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- Article
Modeling of access resistances and channel temperature estimation for GaN HEMT.
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- Journal of Thermal Analysis & Calorimetry, 2022, v. 147, n. 20, p. 10991, doi. 10.1007/s10973-022-11371-y
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- Article
Analysis of Trapping Effects on AlInN/GaN High Electron Mobility Transistors with Pulsed Electrical Measurements Under Visible and Infrared Illumination.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 3, p. 1, doi. 10.1002/pssa.202300653
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- Article
Highly Si‐Doped GaN Regrown by Metal–Organic Vapor‐Phase Epitaxy for Ohmic Contact Applied to Quaternary Barrier‐Based High‐Electron‐Mobility Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 16, p. 1, doi. 10.1002/pssa.202200476
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- Article
Effect of surface passivation by SiN/SiO of AlGaN/GaN high-electron mobility transistors on Si substrate by deep level transient spectroscopy method.
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- Semiconductors, 2013, v. 47, n. 7, p. 1008, doi. 10.1134/S1063782613070087
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- Article
Design of tunable power detector towards 5G applications.
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- Microwave & Optical Technology Letters, 2021, v. 63, n. 3, p. 823, doi. 10.1002/mop.32685
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- Article
ANALYSIS OF LOW FREQUENCY DRAIN CURRENT NOISE IN AlGaN/GaN HEMTS ON Si SUBSTRATE.
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- Fluctuation & Noise Letters, 2004, v. 4, n. 2, p. L319, doi. 10.1142/S0219477504001926
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- Article
Drone Detection and Tracking Using RF Identification Signals.
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- Sensors (14248220), 2023, v. 23, n. 17, p. 7650, doi. 10.3390/s23177650
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- Article