Found: 16
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Simplified inelastic electron tunneling spectroscopy based on low-noise derivatives.
- Published in:
- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-21302-4
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- Article
Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study.
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- International Journal of RF & Microwave Computer-Aided Engineering, 2018, v. 28, n. 8, p. 1, doi. 10.1002/mmce.21455
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- Article
Low Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio in Partial Gated AlGaN/GaN Nanowire Field‐Effect Transistors.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200100
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- Article
Low Leakage and High I<sub>ON</sub>/I<sub>OFF</sub> Ratio in Partial Gated AlGaN/GaN Nanowire Field‐Effect Transistors.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200100
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- Article
Discrete Molecular Copper(II) Complex for Efficient Piezoelectric Energy Harvesting Above Room‐Temperature.
- Published in:
- Angewandte Chemie, 2023, v. 135, n. 9, p. 1, doi. 10.1002/ange.202216680
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- Article
Discrete Molecular Copper(II) Complex for Efficient Piezoelectric Energy Harvesting Above Room‐Temperature.
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- Angewandte Chemie International Edition, 2023, v. 62, n. 9, p. 1, doi. 10.1002/anie.202216680
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- Article
Improved Ohmic contact to GaN and AlGaN/GaN two-dimensional electron gas using trap assisted tunneling by B implantation.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 989, doi. 10.1002/pssb.201451586
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- Article
Graphene nanosheets derived from plastic waste for the application of DSSCs and supercapacitors.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-83483-8
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- Article
Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 5, p. 1, doi. 10.1002/pssa.202300708
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- Article
Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiN<sub>x</sub> as Gate Dielectric and Surface Passivation.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200509
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- Article
High‐Performance GaN HEMTs with I<sub>ON</sub>/I<sub>OFF</sub> ≈10<sup>10</sup> and Gate Leakage Current <10<sup>−11</sup> A mm<sup>−1</sup> Using Ta<sub>2</sub>O<sub>5</sub> Dielectric.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 12, p. 1, doi. 10.1002/pssa.202100839
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- Article
Reduced Contact Resistance and Improved Transistor Performance by Surface Plasma Treatment on Ohmic Regions in AlGaN/GaN HEMT Heterostructures.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700656
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- Article
Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201600620
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- Article
Fringe field control of one-dimensional room temperature sub-band resolved quantum transport in site controlled AlGaN/GaN lateral nanowires (Phys. Status Solidi A 2∕2017).
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 2, p. n/a, doi. 10.1002/pssa.201770107
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- Article
Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy.
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- Physica Status Solidi (B), 2021, v. 258, n. 10, p. 1, doi. 10.1002/pssb.202100223
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- Article
Fabrication and Characterization of New Ti-TiO<sub>2</sub>-Al and Ti-TiO<sub>2</sub>-Pt Tunnel Diodes.
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- Active & Passive Electronic Components, 2012, p. 1, doi. 10.1155/2012/694105
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- Article