Atomic layer deposition of hafnium oxide dielectrics on silicon and germanium substrates.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 119, doi. 10.1007/s10854-007-9337-y
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Works matching AU Gamble, H. S.
Results: 2
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Investigation of stress and structural damage in H and He implanted Ge using micro-Raman mapping technique on bevelled samples.
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- Journal of Raman Spectroscopy, 2012, v. 43, n. 3, p. 448, doi. 10.1002/jrs.3052
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- Article