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Oscillation of the Mirror and Fractional RHEED Reflections during Homoepitaxy on the (2×4)-Reconstructed GaAs(001) Surface.
Published in:
Technical Physics Letters, 2000, v. 26, n. 4, p. 307, doi. 10.1134/1.1262826
By:
- Galitsyn, Yu. G.;
- Moshchenko, S. P.;
- Toropov, A. I.;
- Bakarov, A. K.
Publication type:
Article
As[sub 4] incorporation kinetics in GaAs (001) molecular-beam epitaxy.
Published in:
Technical Physics Letters, 1998, v. 24, n. 4, p. 260, doi. 10.1134/1.1262204
By:
- Galitsyn, Yu. G.;
- Marakhovka, I. I.;
- Moshchenko, S. P.;
- Mansurov, V. G.
Publication type:
Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
Published in:
Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
By:
- Mansurov, V. G.;
- Galitsyn, Yu. G.;
- Malin, T. V.;
- Teys, S. A.;
- Fedosenko, E. V.;
- Kozhukhov, A. S.;
- Zhuravlev, K. S.;
- Cora, Ildikó;
- Pécz, Béla
Publication type:
Article
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143
By:
- Malin, T. V.;
- Milakhin, D. S.;
- Mansurov, V. G.;
- Galitsyn, Yu. G.;
- Kozhuhov, A. S.;
- Ratnikov, V. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Zhuravlev, K. S.
Publication type:
Article
Role of lateral interaction in the homoepitaxy of GaAs on the (001)-β(2 × 4) surface.
Published in:
JETP Letters, 2007, v. 86, n. 7, p. 482, doi. 10.1134/S0021364007190125
By:
- Galitsyn, Yu. G.;
- Dmitriev, D. V.;
- Mansurov, V. G.;
- Moshchenko, S. P.;
- Toropov, A. I.
Publication type:
Article
Thermodynamic and Kinetic Aspects of Reconstruction Transitions at the GaAs(001) Surface.
Published in:
Semiconductors, 2000, v. 34, n. 8, p. 939, doi. 10.1134/1.1188105
By:
- Galitsyn, Yu. G.;
- Mansurov, V. G.;
- Moshchenko, S. P.;
- Toropov, A. I.
Publication type:
Article
Reconstruction Transition (4×2) [long_right_arrow] (2×4) on the (001) Surfaces of InAs and GaAs.
Published in:
Semiconductors, 2000, v. 34, n. 2, p. 174, doi. 10.1134/1.1187930
By:
- Galitsyn, Yu. G.;
- Moshchenko, S. P.;
- Suranov, A. S.
Publication type:
Article
Commensurate and incommensurate indium phases on a (111)A InAs surface
Published in:
Semiconductors, 1998, v. 32, n. 1, p. 78, doi. 10.1134/1.1187368
By:
- Galitsyn, Yu. G.;
- Mansurov, V. G.;
- Marahovka, I. I.;
- Petrenko, I. P.
Publication type:
Article
Asymmetric c(4×4) → γ(2×4) reconstruction phase transition on the (001)GaAs surface.
Published in:
JETP Letters, 2006, v. 84, n. 9, p. 505, doi. 10.1134/S0021364006210089
By:
- Galitsyn, Yu. G.;
- Dmitriev, D. V.;
- Mansurov, V. G.;
- Moshchenko, S. P.;
- Toropov, A. I.
Publication type:
Article
Critical Phenomena in the β-(2×4)→α-(2×4) Reconstruction Transition on the (001) GaAs Surface.
Published in:
JETP Letters, 2005, v. 81, n. 12, p. 629, doi. 10.1134/1.2034593
By:
- Galitsyn, Yu. G.;
- Dmitriev, D. V.;
- Mansurov, V. G.;
- Moshchenko, S. P.;
- Toropov, A. I.
Publication type:
Article

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