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Exceptionally strong coupling of defect emission in hexagonal boron nitride to stacking sequences.
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- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00455-y
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- Article
Bistable carbon-vacancy defects in h-BN.
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- Frontiers in Quantum Science & Technology, 2023, p. 1, doi. 10.3389/frqst.2022.1007756
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- Article
A planar defect spin sensor in a two-dimensional material susceptible to strain and electric fields.
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- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01111-7
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- Article
Formation of Paramagnetic Defects in the Synthesis of Silicon Carbide.
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- Micromachines, 2023, v. 14, n. 8, p. 1517, doi. 10.3390/mi14081517
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- Article
Amino-Termination of Silicon Carbide Nanoparticles.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 13, p. 1953, doi. 10.3390/nano13131953
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- Article
Author Correction: Coherent dynamics of multi-spin VB− center in hexagonal boron nitride.
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- 2023
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- Correction Notice
Coherent control of an ultrabright single spin in hexagonal boron nitride at room temperature.
- Published in:
- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38672-6
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- Article
Recent advances in the ab initio theory of solid-state defect qubits.
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- Nanophotonics (21928606), 2023, v. 12, n. 3, p. 359, doi. 10.1515/nanoph-2022-0723
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- Article
An L-band emitter with quantum memory in silicon.
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- NPJ Computational Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41524-022-00957-7
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- Article
Bistable carbon-vacancy defects in h-BN.
- Published in:
- Frontiers in Quantum Science & Technology, 2022, p. 1, doi. 10.3389/frqst.2022.1007756
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- Publication type:
- Article
Coherent dynamics of multi-spin VB− center in hexagonal boron nitride.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-33399-2
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- Publication type:
- Article
Room-temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast.
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- National Science Review, 2022, v. 9, n. 5, p. 1, doi. 10.1093/nsr/nwab122
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- Article
Carbon defect qubit in two-dimensional WS<sub>2</sub>.
- Published in:
- Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-28876-7
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- Article
Author Correction: Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.
- Published in:
- 2021
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- Publication type:
- Correction Notice
Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins.
- Published in:
- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-24494-x
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- Article
Highly tunable magneto-optical response from magnesium-vacancy color centers in diamond.
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- NPJ Quantum Information, 2021, v. 7, n. 1, p. 1, doi. 10.1038/s41534-021-00439-6
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- Article
Robust coherent control of solid-state spin qubits using anti-Stokes excitation.
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- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-23471-8
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- Article
Solar Photoelectroreduction of Nitrate Ions on PbI<sub>2</sub>/CuI Nanocomposite Electrodes.
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- Solar RRL, 2021, v. 5, n. 2, p. 1, doi. 10.1002/solr.202000418
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- Article
Silicon-Carbide (SiC) Nanocrystal Technology and Characterization and Its Applications in Memory Structures.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 12, p. 2387, doi. 10.3390/nano10122387
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- Article
Stone–Wales defects in hexagonal boron nitride as ultraviolet emitters.
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- NPJ Computational Materials, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1038/s41524-020-00451-y
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- Article
Giant shift upon strain on the fluorescence spectrum of V<sub>N</sub>N<sub>B</sub> color centers in h-BN.
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- NPJ Quantum Information, 2020, v. 6, n. 1, p. N.PAG, doi. 10.1038/s41534-020-00312-y
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- Publication type:
- Article
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide.
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- Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-16330-5
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- Article
Room-temperature coherent control of implanted defect spins in silicon carbide.
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- NPJ Quantum Information, 2020, v. 6, n. 1, p. 1, doi. 10.1038/s41534-020-0270-8
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- Publication type:
- Article
Ab initio theory of the negatively charged boron vacancy qubit in hexagonal boron nitride.
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- NPJ Computational Materials, 2020, v. 6, n. 1, p. 1, doi. 10.1038/s41524-020-0305-x
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- Article
Novel Method for Electroless Etching of 6H–SiC.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 3, p. 538, doi. 10.3390/nano10030538
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- Publication type:
- Article
Immunomodulatory Potential of Differently-Terminated Ultra-Small Silicon Carbide Nanoparticles.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 3, p. 573, doi. 10.3390/nano10030573
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- Article
Stabilization of point-defect spin qubits by quantum wells.
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- Nature Communications, 2019, p. 1, doi. 10.1038/s41467-019-13495-6
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- Article
Ab initio theory of the nitrogen-vacancy center in diamond.
- Published in:
- Nanophotonics (21928606), 2019, v. 8, n. 11, p. 1907, doi. 10.1515/nanoph-2019-0154
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- Publication type:
- Article
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide.
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- Nature Communications, 2019, v. 10, n. 1, p. N.PAG, doi. 10.1038/s41467-019-09873-9
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- Article
The (e<sub>g</sub> ⊗ e<sub>u</sub>) ⊗ E<sub>g</sub> product Jahn–Teller effect in the neutral group-IV vacancy quantum bits in diamond.
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- NPJ Computational Materials, 2019, v. 5, n. 1, p. N.PAG, doi. 10.1038/s41524-019-0158-3
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- Article
Evidence for Primal sp<sup>2</sup> Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources.
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- Advanced Materials Interfaces, 2019, v. 6, n. 3, p. N.PAG, doi. 10.1002/admi.201801449
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- Article
Evidence for Primal sp<sup>2</sup> Defects at the Diamond Surface: Candidates for Electron Trapping and Noise Sources.
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- Advanced Materials Interfaces, 2019, v. 6, n. 3, p. N.PAG, doi. 10.1002/admi.201801449
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- Publication type:
- Article
First principles calculation of spin-related quantities for point defect qubit research.
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- NPJ Computational Materials, 2018, v. 4, n. 1, p. N.PAG, doi. 10.1038/s41524-018-0132-5
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- Article
Ab initio description of highly correlated states in defects for realizing quantum bits.
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- NPJ Quantum Materials, 2018, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41535-018-0103-6
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- Publication type:
- Article
Single-Photon Emission: Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride (Adv. Mater. 12/2017).
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- Advanced Materials, 2017, v. 29, n. 12, p. n/a, doi. 10.1002/adma.201770084
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- Article
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.
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- Advanced Materials, 2017, v. 29, n. 12, p. n/a, doi. 10.1002/adma.201605092
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- Article
Electron-vibration coupling induced renormalization in the photoemission spectrum of diamondoids.
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- Nature Communications, 2016, v. 7, n. 4, p. 11327, doi. 10.1038/ncomms11327
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- Article
Nitrogen Terminated Diamond.
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- Advanced Materials Interfaces, 2015, v. 2, n. 10, p. n/a, doi. 10.1002/admi.201500079
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- Article
Coherent control of single spins in silicon carbide at room temperature.
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- Nature Materials, 2015, v. 14, n. 2, p. 164, doi. 10.1038/nmat4145
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- Article
Molecular-sized fluorescent nanodiamonds.
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- Nature Nanotechnology, 2014, v. 9, n. 1, p. 54, doi. 10.1038/nnano.2013.255
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- Article
Readout and control of a single nuclear spin with a metastable electron spin ancilla.
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- Nature Nanotechnology, 2013, v. 8, n. 7, p. 487, doi. 10.1038/nnano.2013.104
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- Article
Identification of defects at the interface between 3C-SiC quantum dots and a SiO<sub>2</sub> embedding matrix.
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- Physica Status Solidi (B), 2012, v. 249, n. 2, p. 360, doi. 10.1002/pssb.201100527
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- Article
Time-dependent density functional study on the excitation spectrum of point defects in semiconductors.
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- Physica Status Solidi (B), 2011, v. 248, n. 6, p. 1337, doi. 10.1002/pssb.201046254
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- Article
Accurate gap levels and their role in the reliability of other calculated defect properties.
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- Physica Status Solidi (B), 2011, v. 248, n. 4, p. 790, doi. 10.1002/pssb.201046210
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- Article
Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches.
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- Physica Status Solidi (B), 2008, v. 245, n. 7, p. 1281, doi. 10.1002/pssb.200844048
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- Article
'Some like it shallower' - p-type doping in SiC.
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- Physica Status Solidi (B), 2003, v. 235, n. 1, p. 139, doi. 10.1002/pssb.200301522
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- Article