Found: 18
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Spin-dependent polarization response in HgCdTe hot-electron bolometers.
- Published in:
- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2022, v. 25, n. 3, p. 254, doi. 10.15407/spqeo25.03.254
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- Article
Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 185, doi. 10.15407/spqeo24.02.185
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- Article
MBE-grown MCT hetero- and nanostructures for IR and THz detectors.
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- Opto-Electronics Review, 2019, v. 27, n. 3, p. 282, doi. 10.1016/j.opelre.2019.07.002
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- Article
Dynamical screening function and plasmons in the wide HgTe quantum wells at high temperatures.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2018, v. 21, n. 2, p. 187, doi. 10.15407/spqeo21.02.187
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- Article
Modeling of Noise and Resistance of Semimetal Hg<sub>1-x</sub>Cd<sub>x</sub>Te Quantum Well used as a Channel for THz Hot-Electron Bolometer.
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- Nanoscale Research Letters, 2016, v. 11, p. 1, doi. 10.1186/s11671-016-1405-x
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- Article
Oscillatory Regularity of Charge Carrier Trap Energy Spectra in ZnSe Single Crystals.
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- Acta Physica Polonica: A, 2016, v. 129, n. 3, p. 304, doi. 10.12693/APhysPolA.129.304
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- Article
Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 3, p. 297, doi. 10.15407/spqeo18.03.297
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- Article
Sub-THz nonresonant detection in AlGaN/GaN heterojunction FETs.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 1, p. 40
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- Article
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 179
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- Article
Electron relaxation and mobility in the inverted band quantum well CdTe/Hg<sub>1-x</sub>Cd<sub>x</sub>Te/CdTe.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 1, p. 85
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- Article
Silicon field-effect transistors as radiation detectors for the Sub-THz range.
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- Semiconductors, 2012, v. 46, n. 5, p. 678, doi. 10.1134/S1063782612050107
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- Article
Infrared photodetectors based on the system 'HgCdTe photodiode - direct-injection readout circuit'.
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- Opto-Electronics Review, 2011, v. 19, n. 2, p. 198, doi. 10.2478/s11772-011-0010-x
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- Article
Simulated properties of printed antennas on silicon substrates for THz/sub-THz arrays.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2011, v. 14, n. 1, p. 55
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- Article
Simulation of relaxation times and energy spectra of the CdTe/HgCdTe/CdTe quantum well for variable valence band offset, well width, and composition x.
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- Semiconductors, 2010, v. 44, n. 10, p. 1321, doi. 10.1134/S1063782610100143
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- Article
Linear HgCdTe IR FPA 288×4 with bidirectional scanning.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 332, doi. 10.2478/s11772-010-1021-z
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- Article
Changes in 8–12 μm CdHgTe photodiode arrays caused by fast neutron irradiation.
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- Opto-Electronics Review, 2010, v. 18, n. 3, p. 342, doi. 10.2478/s11772-010-1019-6
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- Article
Properties of CdTe thin films prepared by hot wall epitaxy.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2004, v. 7, n. 2, p. 129
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- Article
Charge Transport in HgCdTe-based n[sup +]–p Photodiodes.
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- Semiconductors, 2001, v. 35, n. 7, p. 800, doi. 10.1134/1.1385716
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- Article