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Evaluate Fixed Charge and Oxide‐Trapped Charge on SiO<sub>2</sub>/GaN Metal‐Oxide‐Semiconductor Structure Before and After Postannealing.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900444
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- Article
The Influence of Ga–OH Bond at Initial GaN Surface on the Electrical Characteristics of SiO<sub>2</sub>/GaN Interface.
- Published in:
- Physica Status Solidi (B), 2020, v. 257, n. 2, p. N.PAG, doi. 10.1002/pssb.201900368
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- Publication type:
- Article