Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes.
- Published in:
- 2021
- By:
- Publication type:
- Abstract
Works by Fu, Houqiang
Results: 14
1
2
Effect of substrate morphology on stress-tested GaN-on-GaN vertical p-n diodes.
- Published in:
- 2021
- By:
- Publication type:
- Abstract
3
Plasma Treatment Technologies for GaN Electronics.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 22, p. 4343, doi. 10.3390/electronics13224343
- By:
- Publication type:
- Article
4
β-Ga 2 O 3 -Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances.
- Published in:
- Electronics (2079-9292), 2024, v. 13, n. 7, p. 1234, doi. 10.3390/electronics13071234
- By:
- Publication type:
- Article
5
Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11131972
- By:
- Publication type:
- Article
6
Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiN x /SiON as Composite Gate Dielectric.
- Published in:
- Electronics (2079-9292), 2022, v. 11, n. 6, p. 895, doi. 10.3390/electronics11060895
- By:
- Publication type:
- Article
7
Impact of Protective Layer Structures on High‐Temperature Annealing of GaN.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 24, p. 1, doi. 10.1002/pssa.202200505
- By:
- Publication type:
- Article
8
Impact of Substrate Morphology and Structural Defects in Freestanding Gallium Nitride on the Breakdown Characteristics of GaN-on-GaN Vertical Diodes.
- Published in:
- Journal of Electronic Materials, 2023, v. 52, n. 5, p. 3343, doi. 10.1007/s11664-023-10303-2
- By:
- Publication type:
- Article
9
Characterization of As-Grown and Regrown GaN-on-GaN Structures for Vertical p-n Power Devices.
- Published in:
- Journal of Electronic Materials, 2021, v. 50, n. 5, p. 2637, doi. 10.1007/s11664-021-08769-z
- By:
- Publication type:
- Article
10
High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1187, doi. 10.1049/el.2015.1647
- By:
- Publication type:
- Article
11
High optical power and low‐efficiency droop blue light‐emitting diodes using compositionally step‐graded InGaN barrier.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 15, p. 1187, doi. 10.1049/el.2015.1647
- By:
- Publication type:
- Article
12
Temperature Dependence of Low‐Frequency Noise Characteristics of NiO<sub>x</sub>/β‐Ga<sub>2</sub>O<sub>3</sub> p–n Heterojunction Diodes.
- Published in:
- Advanced Electronic Materials, 2024, v. 10, n. 2, p. 1, doi. 10.1002/aelm.202300501
- By:
- Publication type:
- Article
13
Epitaxial Growth of Ga 2 O 3 : A Review.
- Published in:
- Materials (1996-1944), 2024, v. 17, n. 17, p. 4261, doi. 10.3390/ma17174261
- By:
- Publication type:
- Article
14
A review of ultrawide bandgap materials: properties, synthesis and devices.
- Published in:
- Oxford Open Materials Science, 2022, v. 2, n. 1, p. 1, doi. 10.1093/oxfmat/itac004
- By:
- Publication type:
- Article