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Dynamical Theory of Triple-Crystal X-Ray Diffractometry and Characterization of Microdefects and Strains in Imperfect Single Crystals.
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- Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2016, v. 38, n. 1, p. 99, doi. 10.15407/mfint.38.01.0099
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Structural and photoluminescent properties of TiN thin films.
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- Optics & Spectroscopy, 2014, v. 117, n. 5, p. 753, doi. 10.1134/S0030400X14110198
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- Article
Local Strain Distribution in Synthetic Diamond Crystals, Determined by the Parameters of the Energy Spectrum of the Kikuchi Patterns.
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- Journal of Superhard Materials, 2020, v. 42, n. 1, p. 1, doi. 10.3103/S1063457620010049
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A strain state in synthetic diamond crystals by the data of electron backscatter diffraction method.
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- Journal of Superhard Materials, 2016, v. 38, n. 4, p. 271, doi. 10.3103/S1063457616040080
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Local deformation in diamond crystals defined by the Fourier transformations of Kikuchi patterns.
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- Journal of Superhard Materials, 2013, v. 35, n. 5, p. 284, doi. 10.3103/S1063457613050031
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Distribution of local deformations in diamond crystals according to the analysis of Kikuchi lines profile intensities.
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- Journal of Superhard Materials, 2013, v. 35, n. 4, p. 220, doi. 10.3103/S1063457613040035
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- Article
Defect structure of high-resistance CdTe:Cl single crystals and MoOx/CdTe:Cl/MoOx heterostructures according to the data of high-resolution X-ray diffractometry.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2023, v. 26, n. 4, p. 415, doi. 10.15407/spqeo26.04.415
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Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 246
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Determination of structural homogeneity of synthetic diamonds from analysis of Kikuchi lines intensity distribution.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 262, doi. 10.15407/spqeo13.03.262
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Calculated images of dislocations in crystals on section topograms.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2010, v. 13, n. 3, p. 268
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- Article
Solid state doping of Cd<sub>x</sub>Hg<sub>1-x</sub>Te epitaxial layers with elements of V group.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2006, v. 9, n. 1, p. 36, doi. 10.15407/spqeo9.01.036
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- Article
X-Ray Topography of the Subsurface Crystal Layers in the Skew Asymmetric Reflection Geometry.
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- Archives of Metallurgy & Materials, 2016, v. 61, n. 4, p. 1931, doi. 10.1515/amm-2016-0310
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Study of the Properties of Hg<sub>1 – x – y – z</sub>Cd<sub>x</sub>Mn<sub>y</sub>Zn<sub>z</sub>Te as a New Infrared Optoelectronic Material.
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- Semiconductors, 2005, v. 39, n. 9, p. 1017, doi. 10.1134/1.2042590
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- Article
Nature of a Temperature Hysteresis of Effective Shear Modulus in Single-Crystal Silicon.
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- Semiconductors, 2005, v. 39, n. 7, p. 735, doi. 10.1134/1.1992624
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On the Influence of a Si Single-Crystal Real Surface on the Low-Frequency Internal Friction and the Behavior of an Effective Shear Modulus.
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- Semiconductors, 2003, v. 37, n. 11, p. 1299, doi. 10.1134/1.1626212
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Internal Friction and Effective Shear Modulus of Single-Crystal Silicon in Early Stages of Oxygen Precipitation.
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- Semiconductors, 2002, v. 36, n. 9, p. 962, doi. 10.1134/1.1507272
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Modification of the crystal structure of gadolinium gallium garnet by helium ion irradiation.
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- Crystallography Reports, 2013, v. 58, n. 7, p. 1017, doi. 10.1134/S1063774513070122
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The features of X-ray topographic contrast formation in silicon with dislocation clusters.
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- Crystallography Reports, 2013, v. 58, n. 7, p. 976, doi. 10.1134/S1063774513070080
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Dynamical X-ray diffractometry of the defect structure of garnet crystals.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 11, p. 2558, doi. 10.1002/pssa.201184254
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Determination of structural inhomogeneity of synthesized diamonds by backscattering electron diffraction.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 11, p. 2591, doi. 10.1002/pssa.201184266
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X-ray diffraction characterization of microdefects in silicon crystals after high-energy electron irradiation.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 11, p. 2552, doi. 10.1002/pssa.201184253
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Reconstruction of spatial distribution of strains in crystals using the energy spectrum of X-ray Moiré patterns.
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- Ukrainian Journal of Physical Optics, 2020, v. 21, n. 3, p. 141, doi. 10.3116/16091833/21/3/141/2020
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Graphene/semi-insulating single crystal CdTe Schottky-type heterojunction X- and γ-Ray Radiation Detectors.
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- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-37637-w
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Combined multiparametric X-ray diffraction diagnostics of microdefects in silicon crystals after irradiation by high-energy electrons.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2013, v. 7, n. 3, p. 523, doi. 10.1134/S1027451013030270
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