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4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.
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- Materials (1996-1944), 2024, v. 17, n. 8, p. 1908, doi. 10.3390/ma17081908
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Large-Area MoS 2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 21, p. 2837, doi. 10.3390/nano13212837
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- Article
Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications.
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- Crystals (2073-4352), 2023, v. 13, n. 9, p. 1309, doi. 10.3390/cryst13091309
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- Article
Al 2 O 3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.
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- Materials (1996-1944), 2023, v. 16, n. 16, p. 5638, doi. 10.3390/ma16165638
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- Article
Highly Homogeneous 2D/3D Heterojunction Diodes by Pulsed Laser Deposition of MoS<sub>2</sub> on Ion Implantation Doped 4H‐SiC.
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- Advanced Materials Interfaces, 2023, v. 10, n. 1, p. 1, doi. 10.1002/admi.202201502
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- Article
Nanotechnology for Electronic Materials and Devices.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 19, p. 3319, doi. 10.3390/nano12193319
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- Article
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.
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- Materials (1996-1944), 2022, v. 15, n. 3, p. 830, doi. 10.3390/ma15030830
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- Article
Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS 2 Obtained by MoO 3 Sulfurization.
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- Nanomaterials (2079-4991), 2022, v. 12, n. 2, p. 182, doi. 10.3390/nano12020182
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- Article
Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 12, p. 3316, doi. 10.3390/nano11123316
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- Article
Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.
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- Materials (1996-1944), 2021, v. 14, n. 19, p. 5831, doi. 10.3390/ma14195831
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- Article
Selective Doping in Silicon Carbide Power Devices.
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- Materials (1996-1944), 2021, v. 14, n. 14, p. 3923, doi. 10.3390/ma14143923
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- Article
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 6, p. 1626, doi. 10.3390/nano11061626
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- Article
Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy.
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- Advanced Electronic Materials, 2020, v. 6, n. 2, p. N.PAG, doi. 10.1002/aelm.201901171
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- Article
Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review.
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- Energies (19961073), 2019, v. 12, n. 12, p. 2310, doi. 10.3390/en12122310
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- Article
An Overview of Normally-Off GaN-Based High Electron Mobility Transistors.
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- Materials (1996-1944), 2019, v. 12, n. 10, p. 1599, doi. 10.3390/ma12101599
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- Article
Barrier Inhomogeneity of Ni Schottky Contacts to Bulk GaN.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 9, p. 1, doi. 10.1002/pssa.201700613
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- Article
Electrical characterization of trapping phenomena at SiO<sub>2</sub>/SiC and SiO<sub>2</sub>/GaN in MOS-based devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 4, p. n/a, doi. 10.1002/pssa.201600366
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- Article
Challenges for energy efficient wide band gap semiconductor power devices.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 9, p. 2063, doi. 10.1002/pssa.201300558
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- Article
How Can Agencies Craft a Complete Digital Government Strategy?
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- Public Manager, 2013, v. 42, n. 3, p. 13
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