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Effect of Noise on Resistive Switching of an Yttria Stabilized Zirconia Based Memristor.
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- Journal of Experimental & Theoretical Physics, 2023, v. 137, n. 5, p. 700, doi. 10.1134/S1063776123110031
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- Article
Effect of Temperature on Dissipative Electron Tunneling through Co Nanoparticles in HfO<sub>2</sub> Films.
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- Technical Physics, 2023, v. 68, n. 4, p. 75, doi. 10.1134/S1063784223020032
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- Article
The Formation of Au Nanoparticles in SiO<sub>2</sub>–TiO<sub>2</sub> Films by Local Electrochemical Reduction Using an Atomic Force Microscope Probe.
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- Technical Physics, 2023, v. 68, n. 4, p. 102, doi. 10.1134/S1063784223020068
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- Article
Dissipative Tunneling of Electrons in Vertically Coupled Double Asymmetric InAs/GaAs(001) Quantum Dots.
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- Technical Physics, 2022, v. 67, n. 2, p. 115, doi. 10.1134/S1063784222010145
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- Article
Demonstration of the Effect of Resistive Switching of Individual Filaments in Memristor Ag/Ge/Si Structures Using Atomic Force Microscopy.
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- Technical Physics Letters, 2021, v. 47, n. 11, p. 781, doi. 10.1134/S1063785021080149
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- Article
Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO<sub>2</sub>(Y) Films with Au Nanoparticles.
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- Semiconductors, 2021, v. 55, n. 9, p. 731, doi. 10.1134/S1063782621090050
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- Article
The Formation of Nanosized Ferromagnetic Ni Filaments in Films of ZrO<sub>2</sub>(Y).
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- Technical Physics Letters, 2021, v. 47, n. 7, p. 539, doi. 10.1134/S1063785021060043
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- Article
Resonant Activation of Resistive Switching in ZrO2(Y) Based Memristors.
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- Semiconductors, 2020, v. 54, n. 14, p. 1830, doi. 10.1134/S1063782620140031
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- Article
Resistive Switching in Memristors Based on Ge/Si(001) Epitaxial Layers.
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- Semiconductors, 2020, v. 54, n. 14, p. 1833, doi. 10.1134/S1063782620140109
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- Article
Features of Two-Dimensional Bifurcations during Dissipative Electron Tunneling in Arrays of Au Nanoparticles.
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- Technical Physics, 2020, v. 65, n. 11, p. 1717, doi. 10.1134/S1063784220110249
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- Article
An Atomic Force Microscopic Study of Resistive Switching Resonance Activation in ZrO<sub>2</sub>(Y) Films.
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- Technical Physics, 2020, v. 65, n. 11, p. 1744, doi. 10.1134/S1063784220110079
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- Article
Resistive Switching in Metal–Oxide–Semiconductor Structures with GeSi Nanoislands on a Silicon Substrate.
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- Technical Physics, 2020, v. 65, n. 10, p. 1668, doi. 10.1134/S1063784220100229
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- Article
Atomic Force Microscopy Examination of Elementary Processes in Metalorganic Compound Hydride Epitaxy of GaAs-Based Nanoheterostructures.
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- Technical Physics, 2020, v. 65, n. 5, p. 791, doi. 10.1134/S1063784220050035
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- Article
On the Influence of Pulsed Gamma-Neutron Irradiation on the Morphology of Self-Assembled GeSi/Si(001) Nanoislands.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2020, v. 14, n. 1, p. 169, doi. 10.1134/S1027451020020093
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- Article
Resistive Switching in Memristors Based on Ag/Ge/Si Heterostructures.
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- Technical Physics Letters, 2020, v. 46, n. 1, p. 91, doi. 10.1134/S106378502001023X
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- Article
Atomic-Force Microscopy of Resistive Nonstationary Signal Switching in ZrO<sub>2</sub>(Y) Films.
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- Technical Physics, 2019, v. 64, n. 11, p. 1579, doi. 10.1134/S1063784219110082
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- Article
Tunnel Diodes Based on n<sup>+</sup>-Ge/p<sup>+</sup>-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition.
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- Semiconductors, 2019, v. 53, n. 9, p. 1238, doi. 10.1134/S1063782619090203
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- Article
Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.
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- Semiconductors, 2019, v. 53, n. 9, p. 1262, doi. 10.1134/S1063782619090161
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- Article
Investigation of the Local Photoconductivity of ZrO<sub>2</sub>(Y) Films with Embedded Au Nanoparticles by Conductive Atomic Force Microscopy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 3, p. 424, doi. 10.1134/S1027451019030133
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- Article
Observation of Quantum-Size Effects in a Study of Resistive Switching in Dielectric Films with Au Nanoparticles via Tunneling Atomic Force Microscopy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 1, p. 23, doi. 10.1134/S1027451019010063
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- Article
Study of Local Charge Accumulation in ZrO<sub>2</sub>(Y) Films with Au Nanoparticles by Kelvin Probe Force Microsсopy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2019, v. 13, n. 1, p. 30, doi. 10.1134/S1027451019010105
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- Article
Study of CsPbBr<sub>3</sub> Nanocrystals and Their Agglomerates by Combined Scanning Probe Microscopy and Optical Spectrometry.
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- Optics & Spectroscopy, 2018, v. 125, n. 6, p. 858, doi. 10.1134/S0030400X18120044
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- Article
Features of Switching Memristor Structures to a High-Resistance State by Sawtooth Pulses.
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- Technical Physics Letters, 2018, v. 44, n. 12, p. 1160, doi. 10.1134/S1063785018120416
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- Article
Study of the Effect of Optical Illumination on Resistive Switching in ZrO<sub>2</sub>(Y) Films with Au Nanoparticles by Tunneling Atomic Force Microscopy.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2018, v. 12, n. 6, p. 1304, doi. 10.1134/S1027451019010178
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- Article
Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers.
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- Semiconductors, 2018, v. 52, n. 6, p. 797, doi. 10.1134/S1063782618060064
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- Article
Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands.
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- Semiconductors, 2018, v. 52, n. 5, p. 590, doi. 10.1134/S1063782618050068
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- Article
Plasmon Resonance Induced Photoconductivity in the Yttria Stabilized Zirconia Films with Embedded Au Nanoclusters.
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- Semiconductors, 2018, v. 52, n. 4, p. 465, doi. 10.1134/S1063782618040140
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- Article
Influence of the Rotation Frequency of a Disk Substrate Holder on the Crystal Structure Characteristics of MOCVD-Grown GaAs Layers.
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- Technical Physics, 2018, v. 63, n. 2, p. 211, doi. 10.1134/S1063784218020068
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- Article
Anomalous ferromagnetic resonance in manganese- and aluminum-doped germanium layers deposited from the laser plasma.
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- JETP Letters, 2010, v. 90, n. 12, p. 754, doi. 10.1134/S0021364009240047
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- Article
Photoluminescence of self-forming nanoclusters grown in GeSi/Si heterostructures by sublimating molecular beam epitaxy in GeH<sub>4</sub> medium.
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- Inorganic Materials, 2008, v. 44, n. 11, p. 1157, doi. 10.1134/S0020168508110010
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Photoluminescence of GeSi/Si nanoclusters formed by sublimation molecular-beam epitaxy in GeH<sub>4</sub> medium.
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- Semiconductors, 2008, v. 42, n. 9, p. 1098, doi. 10.1134/S1063782608090169
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Ferromagnets based on diamond-like semiconductors GaSb, InSb, Ge, and Si supersaturated with manganese or iron impurities during laser-plasma deposition.
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- Journal of Experimental & Theoretical Physics, 2008, v. 106, n. 1, p. 110, doi. 10.1134/S1063776108010081
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A study of many-body phenomena in metal nanoclusters (Au, Cu) close to their transition to the nonmetallic state.
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- Journal of Experimental & Theoretical Physics, 2006, v. 102, n. 2, p. 303, doi. 10.1134/S1063776106020117
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- Article
Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer.
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- Semiconductors, 2004, v. 38, n. 4, p. 431, doi. 10.1134/1.1734670
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Formation of Two-Dimensional Periodic Nanostructures on Fused Quartz, Polyimide, and Polycrystalline Diamond by Pulsed Four-Wave Interference Laser Modification.
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- Technical Physics, 2003, v. 48, n. 6, p. 757, doi. 10.1134/1.1583831
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- Article
Electrical Transport and Persistent Photoconductivity in Quantum Dot Layers in InAs/GaAs Structures.
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- Journal of Experimental & Theoretical Physics, 2001, v. 93, n. 4, p. 815, doi. 10.1134/1.1420451
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- Article
X-ray Irradiation at Subthreshold Energies Modifies the Surface Micromorphology of Epitaxial Silicon Layers on Sapphire.
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- Technical Physics Letters, 2001, v. 27, n. 9, p. 725, doi. 10.1134/1.1405240
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- Article
Photoelectric Spectroscopy of InAs/GaAs Quantum Dot Heterostructures in a Semiconductor/Electrolyte System.
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- Semiconductors, 2001, v. 35, n. 5, p. 543, doi. 10.1134/1.1371619
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- Article
Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition.
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- Semiconductors, 2001, v. 35, n. 1, p. 93, doi. 10.1134/1.1340297
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- Article
Elastic Strain and Composition of Self-Assembled GeSi Nanoislands on Si(001).
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- Semiconductors, 2000, v. 34, n. 1, p. 6, doi. 10.1134/1.1187942
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- Article
Polarization of in-plane photoluminescence from InAs / Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy.
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- Semiconductors, 1998, v. 32, n. 10, p. 1119, doi. 10.1134/1.1187541
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Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
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- Semiconductors, 1998, v. 32, n. 9, p. 975, doi. 10.1134/1.1187528
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Photoelectric properties of GaAs/InAs heterostructures with quantum dots.
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- Semiconductors, 1997, v. 31, n. 9, p. 941, doi. 10.1134/1.1187139
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- Article
Spectroscopy of layers of InAs in GaAs across the transition from layered to three-dimensional growth.
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- JETP Letters, 1996, v. 63, n. 6, p. 439, doi. 10.1134/1.567045
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- Article