Found: 9
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Formation of the GaAs-Ge heterointerface in the presence of oxide.
- Published in:
- JETP Letters, 2009, v. 89, n. 2, p. 84, doi. 10.1134/S0021364009020088
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- Article
Topology of PbSnTe:In Layers Versus Indium Concentration.
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- Technical Physics, 2021, v. 66, n. 7, p. 878, doi. 10.1134/S1063784221060086
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- Article
Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion.
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- Technical Physics, 2019, v. 64, n. 11, p. 1704, doi. 10.1134/S1063784219110264
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- Article
Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.
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- Semiconductors, 2009, v. 43, n. 11, p. 1526, doi. 10.1134/S1063782609110220
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- Article
Low-temperature recrystallization of Ge nanolayers on ZnSe.
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- Semiconductors, 2007, v. 41, n. 5, p. 590, doi. 10.1134/S106378260705020X
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- Article
Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy.
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- Semiconductors, 2021, v. 55, n. 1, p. S62, doi. 10.1134/S1063782621090220
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- Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
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- Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
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- Article
Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime.
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- Semiconductors, 2020, v. 54, n. 8, p. 951, doi. 10.1134/S1063782620080035
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article