Works matching AU Fedorov, L. M.

Results: 10

Generating broadband random Gaussian signals.

Published in:

Technical Physics Letters, 2010, v. 36, n. 8, p. 733, doi. 10.1134/S106378501008016X

By:

Zhilyaev, Yu. V.;
Il'inskaya, N. D.;
Inovenkov, A. N.;
Karpov, A. A.;
Kuznetsov, S. I.;
Orlova, T. A.;
Panteleev, V. N.;
Panyutin, E. A.;
Snytkina, S. A.;
Titkova, O. V.;
Fedorov, L. M.;
Khvostikov, V. P.

Publication type:

Article

High-temperature gallium phosphide dynistors.

Published in:

Technical Physics Letters, 2009, v. 35, n. 9, p. 808, doi. 10.1134/S1063785009090077

By:

Zhilyaev, Yu. V.;
Panyutin, E. A.;
Fedorov, L. M.

Publication type:

Article

Binary acceptor doping of epitaxial gallium phosphide for high-temperature electronic devices.

Published in:

Technical Physics Letters, 2008, v. 34, n. 10, p. 898, doi. 10.1134/S106378500810026X

By:

Zhilyaev, Yu. V.;
Panyutin, E. A.;
Fedorov, L. M.

Publication type:

Article

Determination of the free carrier concentration in ultra-pure GaAs epilayers by a photoreflectance technique.

Published in:

Technical Physics Letters, 2008, v. 34, n. 1, p. 37, doi. 10.1134/S1063785008010112

By:

Komkov, O. S.;
Pikhtin, A. N.;
Zhilyaev, Yu. V.;
Fedorov, L. M.

Publication type:

Article

Correlation between the Electrical and Luminescent Properties of High-Purity Gallium Arsenide.

Published in:

Technical Physics Letters, 2004, v. 30, n. 10, p. 810, doi. 10.1134/1.1813717

By:

Botnaryuk, M. V.;
Zhilyaev, Yu. V.;
Orlova, T. A.;
Poletaev, N. K.;
Fedorov, L. M.;
Yusupova, Sh. A.

Publication type:

Article

Behavior of epitaxial GaAs layers as α particle detectors.

Published in:

Technical Physics Letters, 1998, v. 24, n. 4, p. 250, doi. 10.1134/1.1262073

By:

Botnaryuk, V. M.;
Zhilyaev, Yu. V.;
Ivanov, A. M.;
Strokan, N. B.;
Fedorov, L. M.

Publication type:

Article

Discovery of Genes Active in Embryogenesis by Gene Trapping.

Published in:

Russian Journal of Developmental Biology, 2004, v. 35, n. 4, p. 247, doi. 10.1023/B:RUDO.0000036716.91784.3f

By:

Fedorov, L. M.

Publication type:

Article

The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428

By:

Evstropov, V. V.;
Dzhumaeva, M.;
Zhilyaev, Yu. V.;
Nazarov, N.;
Sitnikova, A. A.;
Fedorov, L. M.

Publication type:

Article

Polarization photosensitivity of GaN/Si heterojunctions.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 301, doi. 10.1134/1.1187683

By:

Botnaruk, V. M.;
Raevsky, S. D.;
Belkov, V. V.;
Zhilyaev, Yu. V.;
Rud, Yu. V.;
Fedorov, L. M.;
Rud, V. Yu.

Publication type:

Article

Photoelectric properties of GaN/GaP heterostructures.

Published in:

Semiconductors, 1998, v. 32, n. 10, p. 1077, doi. 10.1134/1.1187571

By:

Botnaryuk, V. M.;
Raevskiı, S. D.;
Bel’kov, V. V.;
Zhilyaev, Yu. V.;
Rud’, Yu. V.;
Fedorov, L. M.;
Rud’, V. Yu.

Publication type:

Article