Found: 5
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4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance.
- Published in:
- Micromachines, 2023, v. 14, n. 5, p. 950, doi. 10.3390/mi14050950
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- Article
A Spatial Cross-Scale Attention Network and Global Average Accuracy Loss for SAR Ship Detection.
- Published in:
- Remote Sensing, 2023, v. 15, n. 2, p. 350, doi. 10.3390/rs15020350
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- Article
Investigation of a 4H-SiC Trench MOSFET with Back-Side Super Junction.
- Published in:
- Micromachines, 2022, v. 13, n. 10, p. 1770, doi. 10.3390/mi13101770
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- Article
Insulating materials for realising carbon neutrality: Opportunities, remaining issues and challenges.
- Published in:
- High Voltage, 2022, v. 7, n. 4, p. 610, doi. 10.1049/hve2.12232
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- Publication type:
- Article
On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs.
- Published in:
- Crystals (2073-4352), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/cryst12050582
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- Article