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Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 3, p. 231
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- Article
Short Communication SIMS study of GaAsN/GaAs multiple quantum wells.
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- Surface & Interface Analysis: SIA, 2000, v. 29, n. 6, p. 399, doi. 10.1002/1096-9918(200006)29:6<399::AID-SIA880>3.0.CO;2-X
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- Article
Biologically active organophosphorous analogues of methionine in reactions catalyzed by L-methionine γ-lyase.
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- Doklady Biochemistry & Biophysics, 2006, v. 407, n. 1, p. 102, doi. 10.1134/S1607672906020153
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- Article
Tyrosine Phenol-Lyase: the Role of the Coenzyme-Binding Residue Ser-254 in Catalysis.
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- Doklady Biochemistry & Biophysics, 2003, v. 391, n. 1-6, p. 225, doi. 10.1023/A:1025117626374
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- Article
POSTMODERNISM: THEORETICAL AND METHODOLOGICAL PROBLEMS.
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- Astra Salvensis, 2020, p. 307
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- Publication type:
- Article
Kinetic and spectral parameters of interaction of Citrobacter freundii methionine γ-lyase with amino acids.
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- Biochemistry (00062979), 2010, v. 75, n. 10, p. 1272, doi. 10.1134/S0006297910100093
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- Article
L-methionine γ-lyase from Citrobacter freundii: Cloning of the gene and kinetic parameters of the enzyme.
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- Biochemistry (00062979), 2006, v. 71, n. 4, p. 361, doi. 10.1134/S0006297906040031
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- Article
Role of Arginine 226 in the Mechanism of Tryptophan Indole-Lyase from Proteus vulgaris.
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- Biochemistry (00062979), 2003, v. 68, n. 11, p. 1181, doi. 10.1023/B:BIRY.0000009131.78603.8b
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- Article
High resolution x-ray diffractometry of the structural characteristics of a semiconducting (InGa)As/GaAs superlattice.
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- Technical Physics, 1999, v. 44, n. 2, p. 171, doi. 10.1134/1.1259279
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- Article
Coherent and diffuse X-ray scattering from a multicomponent superlattice with quantum dots.
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- JETP Letters, 2010, v. 92, n. 7, p. 437, doi. 10.1134/S002136401019001X
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- Article
Spatial structure and the mechanism of tyrosine phenol-lyase and tryptophan indole-lyase.
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- Molecular Biology, 2009, v. 43, n. 2, p. 269, doi. 10.1134/S0026893309020101
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- Article
Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As–GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy.
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- Semiconductors, 2001, v. 35, n. 8, p. 932, doi. 10.1134/1.1393030
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- Article
Type II Broken-Gap InAs/GaIn[sub 0.17]As[sub 0.22]Sb Heterostructures with Abrupt Planar Interface.
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- Semiconductors, 2000, v. 34, n. 12, p. 1381, doi. 10.1134/1.1331795
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- Article
X-Ray diffraction analysis of multilayer InAs–GaAs heterostructures with InAs quantum dots.
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- Semiconductors, 1999, v. 33, n. 11, p. 1229, doi. 10.1134/1.1187855
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- Article
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry.
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- Semiconductors, 1999, v. 33, n. 5, p. 590, doi. 10.1134/1.1187734
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- Publication type:
- Article
Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures
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- Semiconductors, 1998, v. 32, n. 7, p. 692, doi. 10.1134/1.1187485
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- Article
Self-organizing nanoheterostructures in InGaAsP solid solutions
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- Semiconductors, 1998, v. 32, n. 6, p. 590, doi. 10.1134/1.1187444
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- Publication type:
- Article
High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature
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- Semiconductors, 1998, v. 32, n. 1, p. 19, doi. 10.1134/1.1187352
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- Article
Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates.
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- Semiconductors, 1997, v. 31, n. 1, p. 15, doi. 10.1134/1.1187044
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- Article
Applications of dynamical theory of X-ray diffraction by perfect crystals to reciprocal space mapping.
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- Journal of Applied Crystallography, 2017, v. 50, n. 5, p. 1256, doi. 10.1107/S1600576717010123
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- Article
A new approach to wide-angle dynamical X-ray diffraction by deformed crystals.
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- 2006
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- Publication type:
- Other
Rapid communication Photoemission of spinpolarized electrons from strained GaAsP.
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- Applied Physics A: Materials Science & Processing, 1996, v. 63, n. 2, p. 203, doi. 10.1007/s003390050373
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- Article
AlGaAsSb and AlGaInAsSb Growth from Sb-rich Solutions.
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- Crystal Research & Technology, 1998, v. 33, n. 3, p. 457, doi. 10.1002/(SICI)1521-4079(1998)33:3<457::AID-CRAT457>3.0.CO;2-N
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- Publication type:
- Article