Works matching AU FIRSOV, D. A.

Results: 77

POLARIZED PHOTOLUMINESCENCE OF EXCITONS IN n-, p- AND UNDOPED InAs/GaAs QUANTUM DOTS.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 319

By:

FÜRST, J.;
PASCHER, H.;
SHALYGIN, V. A.;
VOROBJEV, L. E.;
FIRSOV, D. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
USTINOV, V. M.

Publication type:

Article

LIGHT EMISSION, ABSORPTION AND AMPLIFICATION IN InAs/GaAs QUANTUM DOTS AND GaAs/AlGaAs QUANTUM WELLS RESULTING FROM OPTICAL PUMPING.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 241, doi. 10.1142/S0219581X0700464X

By:

FIRSOV, D. A.;
VOROBJEV, L. E.;
BARZILOVICH, M. A.;
YU. PANEVIN, V.;
MIKHAYLOV, I. V.;
FEDOSOV, N. K.;
SHALYGIN, V. A.;
TONKIKH, A. A.;
POLYAKOV, N. K.;
SAMSONENKO, YU. B.;
CIRLIN, G. E.;
ZHUKOV, A. E.;
PIKHTIN, N. A.;
TARASOV, I. S.;
USTINOV, V. M.;
JULIEN, F. H.;
SEKOWSKI, M.;
HANNA, S.;
SEILMEIER, A.

Publication type:

Article

Quasi-Local Impurity States in Uniaxially Compressed p-Type Ge.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 132, doi. 10.1134/1.1349917

By:

Abramov, A. A.;
Tulupenko, V. N.;
Firsov, D. A.

Publication type:

Article

Photoionization of short-range acceptor states in uniaxially deformed semiconductors.

Published in:

Semiconductors, 1999, v. 33, n. 6, p. 640, doi. 10.1134/1.1187746

By:

Abramov, A. A.;
Tulupenko, V. N.;
Vas’ko, V. T.;
Firsov, D. A.

Publication type:

Article

Light absorption and refraction due to intersubband transitions of hot electrons in coupled GaAs/AIGaAs quantum wells

Published in:

Semiconductors, 1998, v. 32, n. 7, p. 757

By:

Vorob'ev, L. E.;
Titkov, I. E.;
Toropov, A. A.;
Tulupenko, V. N.;
Firsov, D. A.;
Shalygin, V. A.;
Shubina, T. V.;
Towe, E.

Publication type:

Article

Characteristics of a far-infrared germanium hot-hole laser in the Voigt and Faraday field configurations.

Published in:

Semiconductors, 1997, v. 31, n. 12, p. 1273

By:

Vorob’ev, L. E.;
Danilov, S. N.;
Kochegarov, Yu. V.;
Firsov, D. A.;
Tulupenko, V. N.

Publication type:

Article

Amplification of radiation in the far infrared range by hot holes in germanium in crossed electric and magnetic fields.

Published in:

Semiconductors, 1997, v. 31, n. 12, p. 1280

By:

Vorob’ev, L. E.;
Danilov, S. N.;
Kochegarov, Yu. V.;
Firsov, D. A.;
Tulupenko, V. N.

Publication type:

Article

Determination of Thickness and Doping Features of Multilayer 4H-SiC Structures by Frequency Analysis of IR Reflection Spectra.

Published in:

Technical Physics Letters, 2024, v. 50, n. 2, p. 171, doi. 10.1134/S1063785023180013

By:

Afanasjev, A. V.;
Zubkov, V. I.;
Ilyin, V. A.;
Luchinin, V. V.;
Pavlova, M. V.;
Panov, M. F.;
Trushliakova, V. V.;
Firsov, D. D.

Publication type:

Article

Localization of Deformation in Lattice Structures of 3D-Printed Samples of 03X17H14M2 Steel.

Published in:

Technical Physics Letters, 2020, v. 46, n. 7, p. 683, doi. 10.1134/S1063785020070160

By:

Firsov, D. G.;
Konev, S. D.;
Dubinin, O. N.;
Evlashin, S. A.;
Shishkovsky, I. V.

Publication type:

Article

Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching.

Published in:

Technical Physics Letters, 2020, v. 46, n. 4, p. 312, doi. 10.1134/S1063785020040033

By:

Babichev, A. V.;
Pashnev, D. A.;
Gladyshev, A. G.;
Denisov, D. V.;
Voznyuk, G. V.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Mitrofanov, M. I.;
Evtikhiev, V. P.;
Firsov, D. A.;
Vorob'ev, L. E.;
Pikhtin, N. A.;
Egorov, A. Yu.

Publication type:

Article

Spectral Shift of Quantum-Cascade Laser Emission under the Action of Control Voltage.

Published in:

Technical Physics Letters, 2019, v. 45, n. 11, p. 1136, doi. 10.1134/S106378501911018X

By:

Babichev, A. V.;
Pashnev, D. A.;
Gladyshev, A. G.;
Kurochkin, A. S.;
Kolodeznyi, E. S.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Denisov, D. V.;
Boulley, L.;
Firsov, D. A.;
Vorobjev, L. E.;
Pikhtin, N. A.;
Bousseksou, A.;
Egorov, A. Yu.

Publication type:

Article

Quantum-Cascade Lasers Generating at the 4.8-μm Wavelength at Room Temperature.

Published in:

Technical Physics Letters, 2018, v. 44, n. 9, p. 814, doi. 10.1134/S1063785018090249

By:

Mamutin, V. V.;
Vasil’ev, A. P.;
Lyutetskii, A. V.;
Il’inskaya, N. D.;
Usikova, A. A.;
Zadiranov, Yu. M.;
Maleev, N. A.;
Sofronov, A. N.;
Firsov, D. A.;
Vorob’ev, L. E.;
Ustinov, V. M.

Publication type:

Article

Sintering mechanism for high-density NZP ceramics.

Published in:

Inorganic Materials, 2011, v. 47, n. 6, p. 674, doi. 10.1134/S0020168511060197

By:

Sukhanov, M.;
Pet'kov, V.;
Firsov, D.

Publication type:

Article

Thermodynamic properties of NaZr(AsO).

Published in:

Inorganic Materials, 2011, v. 47, n. 2, p. 178, doi. 10.1134/S0020168511020130

By:

Pet'kov, V.;
Firsov, D.;
Markin, A.;
Sukhanov, M.;
Smirnova, N.

Publication type:

Article

Effect of Strongly Mismatched GaAs and InAs Inserts in a InAlAs Buffer Layer on the Structural and Optical Properties of Metamorphic InAs(Sb)/InGaAs/InAlAs/GaAs Quantum-Confined Heterostructures.

Published in:

JETP Letters, 2019, v. 109, n. 6, p. 377, doi. 10.1134/S0021364019060134

By:

Solov'ev, V. A.;
Chernov, M. Yu.;
Komkov, O. S.;
Firsov, D. D.;
Sitnikova, A. A.;
Ivanov, S. V.

Publication type:

Article

Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers.

Published in:

Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 289, doi. 10.1134/S1064226918030105

By:

Komkov, O. S.;
Firsov, D. D.;
Lvova, T. V.;
Sedova, I. V.;
Solov’ev, V. A.;
Semenov, A. N.;
Ivanov, S. V.

Publication type:

Article

Geometric interpretation of synthesis of a quasi-optical distribution system for multibeam phased array antennas.

Published in:

Journal of Communications Technology & Electronics, 2015, v. 60, n. 3, p. 239, doi. 10.1134/S1064226915030110

By:

Klimov, K.;
Firsov-Shibaev, D.;
Perfil'ev, V.

Publication type:

Article

Time-domain simulation of H-plane optical distribution systems for the development of wideband multibeam active phased antenna arrays.

Published in:

Journal of Communications Technology & Electronics, 2013, v. 58, n. 11, p. 1041, doi. 10.1134/S1064226913110089

By:

Klimov, K.;
Firsov-Shibaev, D.;
Perfil'ev, V.

Publication type:

Article

A method for rapid estimation of residual stresses in metal samples produced by additive manufacturing.

Published in:

Fracture & Structural Integrity, 2024, n. 68, p. 267, doi. 10.3221/IGF-ESIS.68.18

By:

Fedorenko, A.;
Firsov, D.;
Evlashin, S.;
Fedulov, B.;
Lomakin, E.

Publication type:

Article

Erratum to: Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te.

Published in:

2024

By:

Ruzhevich, M. S.;
Firsov, D. D.;
Komkov, O. S.;
Mynbaev, K. D.;
Varavin, V. S.;
Yakushev, M. V.

Publication type:

Correction Notice

Luminescence in p–i–n Structures with Compensated Quantum Wells.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 375, doi. 10.1134/S1063782624050014

By:

Adamov, R. B.;
Melentev, G. A.;
Podoskin, A. A.;
Kondratov, M. I.;
Grishin, A. E.;
Slipchenko, S. O.;
Sedova, I. V.;
Sorokin, S. V.;
Klimko, G. V.;
Makhov, I. S.;
Firsov, D. A.;
Shalygin, V. A.

Publication type:

Article

Photoluminescence of Arsenic Doped Epitaxial Films of Cd0.3Hg0.7Te.

Published in:

Semiconductors, 2024, v. 58, n. 4, p. 345, doi. 10.1134/S1063782624040122

By:

Ruzhevich, M. S.;
Firsov, D. D.;
Komkov, O. S.;
Mynbaev, K. D.;
Varavin, V. S.;
Yakushev, M. V.

Publication type:

Article

Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.

Published in:

Semiconductors, 2021, v. 55, n. 9, p. 710, doi. 10.1134/S1063782621080212

By:

Vinnichenko, M. Ya.;
Makhov, I. S.;
Kharin, N. Yu.;
Graf, S. V.;
Panevin, V. Yu.;
Sedova, I. V.;
Sorokin, S. V.;
Firsov, D. A.

Publication type:

Article

Effect of the Crystallographic Orientation of GaSb Films on Their Structural Properties during MBE Heteroepitaxy on Vicinal Si(001) Substrates.

Published in:

Semiconductors, 2020, v. 54, n. 12, p. 1548, doi. 10.1134/S1063782620120295

By:

Petrushkov, M. O.;
Abramkin, D. S.;
Emelyanov, E. A.;
Putyato, M. A.;
Vasev, A. V.;
Loshkarev, D. I.;
Yesin, M. Yu.;
Komkov, O. S.;
Firsov, D. D.;
Preobrazhenskii, V. V.

Publication type:

Article

Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1198, doi. 10.1134/S1063782620100176

By:

Komkov, O. S.;
Khakhulin, S. A.;
Firsov, D. D.;
Avdienko, P. S.;
Sedova, I. V.;
Sorokin, S. V.

Publication type:

Article

On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers.

Published in:

Semiconductors, 2018, v. 52, n. 7, p. 950, doi. 10.1134/S106378261807014X

By:

Mamutin, V. V.;
Vasilyev, A. P.;
Lyutetskiy, A. V.;
Ilyinskaya, N. D.;
Zadiranov, Yu. M.;
Sofronov, A. N.;
Firsov, D. A.;
Vorobjev, L. E.;
Maleev, N. A.;
Ustinov, V. M.

Publication type:

Article

Absorption of Far-Infrared Radiation in Ge/Si Quantum Dots.

Published in:

Semiconductors, 2018, v. 52, n. 1, p. 59, doi. 10.1134/S1063782618010220

By:

Sofronov, A.;
Balagula, R.;
Firsov, D.;
Vorobjev, L.;
Tonkikh, A.;
Sarkisyan, H.;
Hayrapetyan, D.;
Petrosyan, L.;
Kazaryan, E.

Publication type:

Article

Phase modulation of mid-infrared radiation in double-quantum-well structures under a lateral electric field.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 363, doi. 10.1134/S1063782617030034

By:

Balagula, R.;
Vinnichenko, M.;
Makhov, I.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.

Publication type:

Article

Modulation of intersubband light absorption and interband photoluminescence in double GaAs/AlGaAs quantum wells under strong lateral electric fields.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1425, doi. 10.1134/S106378261611004X

By:

Balagula, R.;
Vinnichenko, M.;
Makhov, I.;
Firsov, D.;
Vorobjev, L.

Publication type:

Article

Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1299, doi. 10.1134/S1063782616100067

By:

Babichev, A.;
Bousseksou, A.;
Pikhtin, N.;
Tarasov, I.;
Nikitina, E.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.;
Novikov, I.;
Karachinsky, L.;
Egorov, A.

Publication type:

Article

Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 915, doi. 10.1134/S1063782616070253

By:

Vasilyev, Yu.;
Mikhailov, N.;
Vasilyeva, G.;
Ivánov, Yu.;
Zakhar'in, A.;
Andrianov, A.;
Vorobiev, L.;
Firsov, D.;
Grigoriev, M.;
Antonov, A.;
Ikonnikov, A.;
Gavrilenko, V.

Publication type:

Article

Effect of transverse electric field and temperature on light absorption in GaAs/AlGaAs tunnel-coupled quantum wells.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1425, doi. 10.1134/S1063782615110081

By:

Firsov, D.;
Vorobjev, L.;
Vinnichenko, M.;
Balagula, R.;
Kulagina, M.;
Vasil'iev, A.

Publication type:

Article

Lasing of multiperiod quantum-cascade lasers in the spectral range of (5.6-5.8)-μm under current pumping.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1527, doi. 10.1134/S106378261511007X

By:

Egorov, A.;
Babichev, A.;
Karachinsky, L.;
Novikov, I.;
Nikitina, E.;
Tchernycheva, M.;
Sofronov, A.;
Firsov, D.;
Vorobjev, L.;
Pikhtin, N.;
Tarasov, I.

Publication type:

Article

Terahertz radiation associated with the impurity electron transition in quantum wells upon optical and electrical pumping.

Published in:

Semiconductors, 2015, v. 49, n. 1, p. 28, doi. 10.1134/S106378261501008X

By:

Firsov, D.;
Vorobjev, L.;
Panevin, V.;
Sofronov, A.;
Balagula, R.;
Makhov, I.;
Kozlov, D.;
Vasil'ev, A.

Publication type:

Article

Lateral photoconductivity in structures with Ge/Si quantum dots.

Published in:

Semiconductors, 2013, v. 47, n. 12, p. 1574, doi. 10.1134/S1063782613120154

By:

Panevin, V. Yu.;
Sofronov, A. N.;
Vorobjev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Vinnichenko, M. Ya.;
Balagula, R. M.;
Tonkikh, A. A.;
Werner, P.;
Fuhrman, B.;
Schmidt, G.

Publication type:

Article

Dependence of the carrier concentration on the current in mid-infrared injection lasers with quantum wells.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1513, doi. 10.1134/S1063782613110237

By:

Vinnichenko, M.;
Vorobjev, L.;
Firsov, D.;
Mashko, M.;
Balagula, R.;
Belenky, G.;
Shterengas, L.;
Kipshidze, G.

Publication type:

Article

Determination of the thickness and spectral dependence of the refractive index of AlInSb epitaxial layers from reflectance spectra.

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 292, doi. 10.1134/S1063782613020140

By:

Komkov, O.;
Firsov, D.;
Semenov, A.;
Meltser, B.;
Troshkov, S.;
Pikhtin, A.;
Ivanov, S.

Publication type:

Article

Photoluminescence dynamics in InGaAsSb/AlGaAsSb quantum well nanostructures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 146, doi. 10.1134/S1063782612120202

By:

Vinnichenko, M.;
Firsov, D.;
Vorobjev, L.;
Mashko, M.;
Shterengas, L.;
Belenky, G.

Publication type:

Article

Photoinduced and equilibrium optical absorption in Ge/Si quantum dots.

Published in:

Semiconductors, 2012, v. 46, n. 12, p. 1529, doi. 10.1134/S1063782612120226

By:

Vorobjev, L.;
Firsov, D.;
Shalygin, V.;
Panevin, V.;
Sofronov, A.;
Yakimov, A.;
Dvurechenskii, A.;
Tonkikh, A.;
Werner, P.

Publication type:

Article

Optical properties of epitaxial AlInSb alloy layers.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1425, doi. 10.1134/S1063782611110145

By:

Komkov, O.;
Semenov, A.;
Firsov, D.;
Meltser, B.;
Solov'ev, V.;
Popova, T.;
Pikhtin, A.;
Ivanov, S.

Publication type:

Article

Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1394, doi. 10.1134/S1063782610110023

By:

Firsov, D.;
Shalygin, V.;
Panevin, V.;
Melentyev, G.;
Sofronov, A.;
Vorobjev, L.;
Andrianov, A.;
Zakhar'in, A.;
Mikhrin, V.;
Vasil'ev, A.;
Zhukov, A.;
Gavrilenko, L.;
Gavrilenko, V.;
Antonov, A.;
Aleshkin, V.

Publication type:

Article

Carrier heating in quantum wells under optical and current injection of electron-hole pairs.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1402, doi. 10.1134/S1063782610110047

By:

Vorobjev, L.;
Vinnichenko, M.;
Firsov, D.;
Zerova, V.;
Panevin, V.;
Sofronov, A.;
Thumrongsilapa, P.;
Ustinov, V.;
Zhukov, A.;
Vasiljev, A.;
Shterengas, L.;
Kipshidze, G.;
Hosoda, T.;
Belenky, G.

Publication type:

Article

Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures.

Published in:

Semiconductors, 2010, v. 44, n. 1, p. 50, doi. 10.1134/S1063782610010082

By:

Firsov, D. A.;
Shterengas, L.;
Kipshidze, G.;
Zerova, V. L.;
Hosoda, T.;
Thumrongsilapa, P.;
Vorobjev, L. E.;
Belenky, G.

Publication type:

Article

Modulation of intersubband absorption in tunnel-coupled quantum wells in electric fields.

Published in:

Semiconductors, 2007, v. 41, n. 5, p. 596, doi. 10.1134/S1063782607050211

By:

Zerova, V. L.;
Vorob'ev, L. E.;
Firsov, D. A.;
Towe, E.

Publication type:

Article

The Engineering and Properties of InAs Quantum Dot Molecules in a GaAs Matrix.

Published in:

Semiconductors, 2005, v. 39, n. 1, p. 124, doi. 10.1134/1.1852660

By:

Samsonenko, Yu. B.;
Cirlin, G. E.;
Tonkikh, A. A.;
Polyakov, N. K.;
Kryzhanovskaya, N. V.;
Ustinov, V. M.;
Vorob'ev, L. E.;
Firsov, D. A.;
Shalygin, V. A.;
Zakharov, N. D.;
Werner, P.;
Andreev, A.

Publication type:

Article

Intersubband Absorption of Light in Selectively Doped Asymmetric Double Tunnel-Coupled Quantum Wells.

Published in:

Semiconductors, 2004, v. 38, n. 12, p. 1409, doi. 10.1134/1.1836062

By:

Zerova, V. L.;
Kapaev, V. V.;
Vorob'ev, L. E.;
Firsov, D. A.;
Schmidt, S.;
Zibik, E. A.;
Seilmeier, A.;
Towe, E.

Publication type:

Article

Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures.

Published in:

Semiconductors, 2004, v. 38, n. 5, p. 565, doi. 10.1134/1.1755893

By:

Agekyan, V. F.;
Stepanov, Yu A.;
Akai, I.;
Karasava, T.;
Vorob'ev, L. E.;
Firsov, D. A.;
Zhukov, A. E.;
Ustinov, V. M.;
A. Zeilmeyer;
Shmidt, S.;
Hanna, S.;
Zibik, E.

Publication type:

Article

Electron Heating by a Strong Longitudinal Electric Field in Quantum Wells.

Published in:

Semiconductors, 2003, v. 37, n. 5, p. 586

By:

Vorob’ev, L. E.;
Danilov, S. N.;
Zerova, V. L.;
Firsov, D. A.

Publication type:

Article

Formation of Magnesia Slags of Sensible Composition with Converter Processing of High-Phosphorus Cast Iron and Application of a Wear-Resistant Slag Skull to a Lining Using a Magnesia-Alumina Flux.

Published in:

Refractories & Industrial Ceramics, 2013, v. 54, n. 1, p. 1, doi. 10.1007/s11148-013-9538-2

By:

Demidov, K.;
Vitushchenko, M.;
Smirnov, L.;
Zolin, A.;
Babenko, A.;
Bogomyakov, V.;
Vozchikov, A.;
Yablonskii, V.;
Dobromilov, A.;
Borisova, T.;
Firsov, D.;
Krivykh, L.;
Kutdusova, Kh.

Publication type:

Article

Topology of supramolecular structures in ethanol solutions.

Published in:

Journal of Structural Chemistry, 2017, v. 58, n. 4, p. 782, doi. 10.1134/S0022476617040205

By:

Tolmachev, A.;
Klimov, A.;
Anuchin, K.;
Firsov, D.

Publication type:

Article