Found: 16
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Formation of the GaAs-Ge heterointerface in the presence of oxide.
- Published in:
- JETP Letters, 2009, v. 89, n. 2, p. 84, doi. 10.1134/S0021364009020088
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- Article
PECULIARITIES OF TECHNOLOGY OF MANUFACTURE AND APPLICATION OF FLUX-CORED STRIPS FOR SURFACING.
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- Paton Welding Journal, 2015, n. 5/6, p. 107, doi. 10.15407/tpwj2015.06.24
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- Article
Obligatory medical prescription of antibiotics in Russia: Navigating formal and informal health‐care infrastructures.
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- Sociology of Health & Illness, 2021, v. 43, n. 2, p. 353, doi. 10.1111/1467-9566.13224
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- Article
EFFECT OF FLUX-CORED STRIP SURFACING MODES ON GEOMETRIC PARAMETERS OF DEPOSITED BEADS.
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- Paton Welding Journal, 2017, n. 1, p. 36, doi. 10.15407/tpwj2017.01.06
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- Article
Topology of PbSnTe:In Layers Versus Indium Concentration.
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- Technical Physics, 2021, v. 66, n. 7, p. 878, doi. 10.1134/S1063784221060086
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- Article
Modification of the Surface Properties of PbSnTe〈In〉 Epitaxial Layers with Composition near Band Inversion.
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- Technical Physics, 2019, v. 64, n. 11, p. 1704, doi. 10.1134/S1063784219110264
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- Article
AUTOMATED CONTROL SYSTEM OF CLEANROOMS.
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- Electronics & Control Systems, 2014, v. 2, n. 40, p. 59, doi. 10.18372/1990-5548.40.7437
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- Article
MATHEMATICAL MODELS OF POLLUTION DYNAMICS OF CLEAN ROOMS.
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- Electronics & Control Systems, 2014, v. 1, n. 39, p. 114, doi. 10.18372/1990-5548.39.7346
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- Article
COMPUTER-AIDED DESIGN OF CLEANROOM VENTILATION AND AIR CONDITIONING SYSTEM.
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- Electronics & Control Systems, 2013, v. 4, n. 38, p. 60, doi. 10.18372/1990-5548.38.7279
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- Article
COMPUTER-AIDED DESIGN SYSTEM OF CLEANROOM ELEMENTS.
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- Electronics & Control Systems, 2013, v. 3, n. 37, p. 89
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- Article
Epitaxial growth of ZnSe on GaAs with the use of the ZnSe compound as the source.
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- Semiconductors, 2009, v. 43, n. 11, p. 1526, doi. 10.1134/S1063782609110220
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- Article
Low-temperature recrystallization of Ge nanolayers on ZnSe.
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- Semiconductors, 2007, v. 41, n. 5, p. 590, doi. 10.1134/S106378260705020X
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- Article
Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy.
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- Semiconductors, 2021, v. 55, n. 1, p. S62, doi. 10.1134/S1063782621090220
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- Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
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- Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
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- Article
Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime.
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- Semiconductors, 2020, v. 54, n. 8, p. 951, doi. 10.1134/S1063782620080035
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- Article
Formation of a Graphene-Like SiN Layer on the Surface Si(111).
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- Semiconductors, 2018, v. 52, n. 12, p. 1511, doi. 10.1134/S1063782618120151
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- Article