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PHOTOINDUCED 2D PLASMON MODES IN Cs NANOCLUSTERS ON THE GaAs(100)Ga-RICH SURFACE.
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- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 191, doi. 10.1142/S0219581X07004560
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- Article
Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6
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- Article
Strong Coupling of Exciton in Organic Material and Plasmonic Whispering Gallery Modes Localized on the Surface of Silver Nanoparticles.
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- JETP Letters, 2023, v. 118, n. 1, p. 21, doi. 10.1134/S0021364023601562
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- Article
Enhancement of the Basal-Plane Stacking Fault Emission in a GaN Planar Nanowire Microcavity.
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- JETP Letters, 2022, v. 115, n. 10, p. 574, doi. 10.1134/S0021364022100605
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- Article
Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling.
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- Semiconductors, 2023, v. 57, n. 10, p. 445, doi. 10.1134/S1063782623090038
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- Article
Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers.
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- Semiconductors, 2023, v. 57, n. 9, p. 377, doi. 10.1134/S1063782623070023
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- Article
On the Effect of Etching with a Focused Ga<sup>+</sup> Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al<sub>0.18</sub>Ga<sub>0.82</sub>As/GaAs/Al<sub>0.18</sub>Ga<sub>0.82</sub>As Heterostructure.
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- Semiconductors, 2023, v. 57, n. 6, p. 316, doi. 10.1134/S1063782623080171
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- Article
Quantum-Cascade Laser with Radiation Emission through a Textured Layer.
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- Semiconductors, 2022, v. 56, n. 1, p. 1, doi. 10.1134/S106378262201002X
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- Article
Surface Emitting Quantum-Cascade Ring Laser.
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- Semiconductors, 2021, v. 55, n. 7, p. 591, doi. 10.1134/S106378262107006X
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- Article
Photoluminescence Study of AlGaAs/GaAs after Focused Ion Beam Milling.
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- Semiconductors, 2020, v. 54, n. 14, p. 1869, doi. 10.1134/S1063782620140316
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- Article
Quantum-Cascade Ring Resonator Laser with 7–8 μm Wavelength and Surface Radiation Output.
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- Semiconductors, 2020, v. 54, n. 14, p. 1816, doi. 10.1134/S106378262014002X
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- Article
Lateral Mode Tuning in Coupled Ridge Waveguides Using Focused Ion Beam.
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- Semiconductors, 2020, v. 54, n. 14, p. 1811, doi. 10.1134/S1063782620140237
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- Article
Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image.
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- Semiconductors, 2020, v. 54, n. 12, p. 1682, doi. 10.1134/S1063782620120246
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- Article
Strong Coupling of Excitons in Hexagonal GaN Microcavities.
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- Semiconductors, 2020, v. 54, n. 1, p. 127, doi. 10.1134/S1063782620010042
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- Article
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.
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- Semiconductors, 2019, v. 53, n. 16, p. 2121, doi. 10.1134/S106378261912025X
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- Article
Selective Epitaxy of Submicron GaN Structures.
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- Semiconductors, 2019, v. 53, n. 16, p. 2118, doi. 10.1134/S1063782619120157
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- Article
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB.
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- Semiconductors, 2019, v. 53, n. 16, p. 2100, doi. 10.1134/S1063782619120170
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- Article
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching.
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- Semiconductors, 2019, v. 53, n. 11, p. 1545, doi. 10.1134/S1063782619110101
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- Article
FIB Lithography Challenges of Si<sub>3</sub>N<sub>4</sub>/GaN Mask Preparation for Selective Epitaxy.
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- Semiconductors, 2018, v. 52, n. 16, p. 2114, doi. 10.1134/S1063782618160212
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- Article
Annealing of FIB-Induced Defects in GaAs/AlGaAs Heterostructure.
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- Semiconductors, 2018, v. 52, n. 14, p. 1898, doi. 10.1134/S1063782618140178
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- Article
Selective Epitaxial Growth of III-N Structures Using Ion-Beam Nanolithography.
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- Semiconductors, 2018, v. 52, n. 10, p. 1357, doi. 10.1134/S106378261810007X
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- Article
Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching.
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- Semiconductors, 2018, v. 52, n. 7, p. 954, doi. 10.1134/S1063782618070151
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- Article
On the lifetime of charge carriers in quantum dots at low temperatures.
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- Semiconductors, 2013, v. 47, n. 1, p. 22, doi. 10.1134/S1063782613010193
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- Article
The role of transport processes of nonequilibrium charge carriers in radiative properties of arrays of InAs/GaAs quantum dots.
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- Semiconductors, 2008, v. 42, n. 3, p. 291, doi. 10.1134/S1063782608030093
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- Article
Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers.
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- Semiconductors, 2007, v. 41, n. 12, p. 1434, doi. 10.1134/S106378260712010X
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- Article
An increase in the electron mobility in the two-barrier AlGaAs/GaAs/AlGaAs heterostructure as a result of introduction of thin InAs barriers for polar optical phonons into the GaAs quantum well.
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- Semiconductors, 2007, v. 41, n. 12, p. 1439, doi. 10.1134/S1063782607120111
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- Article
Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells.
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- Semiconductors, 2006, v. 40, n. 12, p. 1432, doi. 10.1134/S1063782606120116
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- Article
Kelvin probe force microscopy of hole leakage from the active region of a working injection-type semiconductor laser diode.
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- Semiconductors, 2006, v. 40, n. 8, p. 982, doi. 10.1134/S1063782606080185
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- Article
Temperature Dependence of the Threshold Current of QW Lasers.
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- Semiconductors, 2005, v. 39, n. 10, p. 1210, doi. 10.1134/1.2085272
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- Article
Relationship between quasi-threshold and thresholdless auger recombination processes in InAs/GaAs quantum dots.
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- Technical Physics Letters, 2006, v. 32, n. 8, p. 670, doi. 10.1134/S1063785006080104
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- Article
Atomic Force Microscopy of InAs Quantum Dots on the Vicinal Surface of a GaAs Crystal.
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- Technical Physics Letters, 2002, v. 28, n. 2, p. 139, doi. 10.1134/1.1458515
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- Article
An Active Lasing Region with a Quantum Well and a Quantum Dot Array.
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- Technical Physics Letters, 2001, v. 27, n. 3, p. 248, doi. 10.1134/1.1359841
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- Article
Liquid-metal field electron source based on porous GaP.
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- Technical Physics, 2017, v. 62, n. 9, p. 1424, doi. 10.1134/S1063784217090171
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- Article
Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots.
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- Semiconductors, 2002, v. 36, n. 1, p. 74, doi. 10.1134/1.1434517
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- Article
Cross-Sectional Electrostatic Force Microscopy of Semiconductor Laser Diodes.
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- Semiconductors, 2001, v. 35, n. 7, p. 840, doi. 10.1134/1.1385722
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- Article
Laser Waveguide with a Reverse Gradient of the Refractive Index.
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- Semiconductors, 2000, v. 34, n. 11, p. 1338, doi. 10.1134/1.1325435
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- Article
The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes.
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- Semiconductors, 2000, v. 34, n. 11, p. 1341, doi. 10.1134/1.1325436
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- Article
Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates.
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- Semiconductors, 1999, v. 33, n. 9, p. 988, doi. 10.1134/1.1187820
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- Article
Increasing the power of broad-waveguide lasers by additional selection of transverse modes.
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- Semiconductors, 1999, v. 33, n. 6, p. 693, doi. 10.1134/1.1187759
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- Article
Nanorelief of an oxidized cleaved surface of a grid of alternating Ga[sub 0.7]Al[sub 0.3]As and GaAs heterolayers.
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- Semiconductors, 1999, v. 33, n. 5, p. 555, doi. 10.1134/1.1187727
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- Article
Correlation between the reliability of laser diodes and the crystal perfection of epitaxial layers estimated by high-resolution x-ray diffractometry.
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- Semiconductors, 1999, v. 33, n. 5, p. 590, doi. 10.1134/1.1187734
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- Article
Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region.
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- Semiconductors, 1998, v. 32, n. 12, p. 1323, doi. 10.1134/1.1187622
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- Article
Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
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- Semiconductors, 1998, v. 32, n. 7, p. 765, doi. 10.1134/1.1187502
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- Article
Subwave Textured Surfaces for the Radiation Coupling from the Waveguide.
- Published in:
- Technical Physics Letters, 2023, v. 49, p. S299, doi. 10.1134/S1063785023010339
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- Article
Focused Ion Beam Milling of Ridge Waveguides of Edge-Emitting Semiconductor Lasers.
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- Technical Physics Letters, 2023, v. 49, p. S288, doi. 10.1134/S1063785023010285
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- Article
Quantum-Cascade Lasers with a Distributed Bragg Reflector Formed by Ion-Beam Etching.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 4, p. 312, doi. 10.1134/S1063785020040033
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- Article
Field-emission pumping of a ZnSe/CdSe/ZnSe nanoheterostructure with low-energy electrons through a surface potential barrier.
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- Technical Physics Letters, 2015, v. 41, n. 1, p. 50, doi. 10.1134/S1063785015010095
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- Article
On the accuracy of quantitative measurements of the local surface potential.
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- Technical Physics Letters, 2010, v. 36, n. 3, p. 228, doi. 10.1134/S1063785010030090
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- Article
Direct observation of minority carrier leakage in operating laser diodes by Kelvin probe force microscopy.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 573, doi. 10.1134/S1063785009060261
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- Article
Studying local surface electric conductivity of a ZnSe/CdSe/ZnSe heterostructure by scanning tunneling microscopy in the field electron emission regime.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 6, p. 504, doi. 10.1134/S1063785009060078
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- Article