Works by Evstropov, V. V.

Results: 22

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells.
Published in:
International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/836284
By:
- Kalyuzhnyy, N. A.;
- Evstropov, V. V.;
- Lantratov, V. M.;
- Mintairov, S. A.;
- Mintairov, M. A.;
- Gudovskikh, A. S.;
- Luque, A.;
- Andreev, V. M.
Publication type:
Article
Photoconductivity in Porous GaN Layers.
Published in:
Physica Status Solidi (B), 2001, v. 228, n. 2, p. 589, doi. 10.1002/1521-3951(200111)228:2<589::AID-PSSB589>3.0.CO;2-J
By:
- Mynbaeva, M.;
- Bazhenov, N.;
- Mynbaev, K.;
- Evstropov, V.;
- Saddow, S.E.;
- Koshka, Y.;
- Melnik, Y.
Publication type:
Article
Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Salii, R. A.;
- Nadtochiy, A. M.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.
Published in:
Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.
Published in:
Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Salii, R. A.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
On current spreading in solar cells: a two-parameter tube model.
Published in:
Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162
By:
- Mintairov, M.;
- Evstropov, V.;
- Mintairov, S.;
- Timoshina, N.;
- Shvarts, M.;
- Kalyuzhnyy, N.
Publication type:
Article
Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.
Published in:
Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164
By:
- Mintairov, M.;
- Evstropov, V.;
- Mintairov, S.;
- Shvarts, M.;
- Timoshina, N.;
- Kalyuzhnyy, N.
Publication type:
Article
Electrical properties of Pd-oxide-InP structures.
Published in:
Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094
By:
- Grebenshchikova, E.;
- Evstropov, V.;
- Il'inskaya, N.;
- Mel'nikov, Yu.;
- Serebrennikova, O.;
- Sidorov, V.;
- Sherstnev, V.;
- Yakovlev, Yu.
Publication type:
Article
Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.
Published in:
Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133
By:
- Mintairov, M.;
- Evstropov, V.;
- Kalyuzhnyy, N.;
- Mintairov, S.;
- Shvarts, M.;
- Timoshina, N.;
- Salii, R.;
- Lantratov, V.
Publication type:
Article
Photoelectric determination of the series resistance of multijunction solar cells.
Published in:
Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143
By:
- Mintairov, M.;
- Evstropov, V.;
- Kalyuzhnyi, N.;
- Mintairov, C.;
- Timoshina, N.;
- Shvartz, M.;
- Lantratov, V.
Publication type:
Article
Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.
Published in:
Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152
By:
- Lebedeva, N.;
- Usikova, A.;
- Evstropov, V.;
- Lebedev, M.;
- Ulin, V.;
- Lantratov, V.;
- Andreev, V.
Publication type:
Article
Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells.
Published in:
Semiconductors, 2010, v. 44, n. 11, p. 1520, doi. 10.1134/S106378261011028X
By:
- Kalyuzhnyy, N.;
- Gudovskikh, A.;
- Evstropov, V.;
- Lantratov, V.;
- Mintairov, S.;
- Timoshina, N.;
- Shvarts, M.;
- Andreev, V.
Publication type:
Article
Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.
Published in:
Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200
By:
- Andreev, V. M.;
- Evstropov, V. V.;
- Kalinovsky, V. S.;
- Lantratov, V. M.;
- Khvostikov, V. P.
Publication type:
Article
The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.
Published in:
Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231
By:
- Andreev, V.;
- Evstropov, V.;
- Kalinovskiĭ, V.;
- Lantratov, V.;
- Khvostikov, V.
Publication type:
Article
Dependence of GaN Photoluminescence on the Excitation Intensity.
Published in:
Semiconductors, 2002, v. 36, n. 10, p. 1128, doi. 10.1134/1.1513856
By:
- Bessolov, V. N.;
- Evstropov, V. V.;
- Kompan, M. E.;
- Mesh, M. V.
Publication type:
Article
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
Published in:
Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
By:
- Evstropov, V. V.;
- Dzhumaeva, M.;
- Zhilyaev, Yu. V.;
- Nazarov, N.;
- Sitnikova, A. A.;
- Fedorov, L. M.
Publication type:
Article
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
Published in:
Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
By:
- Evstropov, V. V.;
- Zhilyaev, Yu. V.;
- Dzhumaeva, M.;
- Nazarov, N.
Publication type:
Article
Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell.
Published in:
Technical Physics Letters, 2023, v. 49, p. S81, doi. 10.1134/S1063785023900431
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Nakhimovich, M. V.;
- Saliy, R. A.;
- Shvarts, M. Z.;
- Kalyuzhniy, N. A.
Publication type:
Article
A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm.
Published in:
Technical Physics Letters, 2023, v. 49, p. S78, doi. 10.1134/S106378502390042X
By:
- Mintairov, S. A.;
- Evstropov, V. V.;
- Mintairov, M. A.;
- Nakhimovich, M. V.;
- Salii, R. A.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.
Published in:
Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Nadtochii, A. M.;
- Salii, R. A.;
- Shvarts, M. Z.;
- Kalyuzhnyi, N. A.
Publication type:
Article
Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum.
Published in:
Technical Physics Letters, 2020, v. 46, n. 4, p. 332, doi. 10.1134/S1063785020040112
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Shvartz, M. Z.;
- Kalyuzhnyi, N. A.
Publication type:
Article
Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations.
Published in:
Technical Physics Letters, 2019, v. 45, n. 11, p. 1100, doi. 10.1134/S1063785019110099
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article