Works matching AU Evstropov, V. V.
Results: 22
Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells.
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- International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/836284
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Photoconductivity in Porous GaN Layers.
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- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 589, doi. 10.1002/1521-3951(200111)228:2<589::AID-PSSB589>3.0.CO;2-J
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Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.
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- Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102
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Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.
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- Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149
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Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.
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- Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135
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On current spreading in solar cells: a two-parameter tube model.
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- Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162
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Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.
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- Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164
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Electrical properties of Pd-oxide-InP structures.
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- Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094
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Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.
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- Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133
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Photoelectric determination of the series resistance of multijunction solar cells.
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- Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143
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Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.
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- Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152
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Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells.
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- Semiconductors, 2010, v. 44, n. 11, p. 1520, doi. 10.1134/S106378261011028X
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Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.
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- Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200
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The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.
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- Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231
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Dependence of GaN Photoluminescence on the Excitation Intensity.
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- Semiconductors, 2002, v. 36, n. 10, p. 1128, doi. 10.1134/1.1513856
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The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
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- Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
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Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
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- Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
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Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell.
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- Technical Physics Letters, 2023, v. 49, p. S81, doi. 10.1134/S1063785023900431
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A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm.
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- Technical Physics Letters, 2023, v. 49, p. S78, doi. 10.1134/S106378502390042X
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The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.
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- Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X
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Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum.
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- Technical Physics Letters, 2020, v. 46, n. 4, p. 332, doi. 10.1134/S1063785020040112
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Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations.
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- Technical Physics Letters, 2019, v. 45, n. 11, p. 1100, doi. 10.1134/S1063785019110099
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