Works matching AU Evstropov, V. V.

Results: 22

Photoconductivity in Porous GaN Layers.

Published in:

Physica Status Solidi (B), 2001, v. 228, n. 2, p. 589, doi. 10.1002/1521-3951(200111)228:2<589::AID-PSSB589>3.0.CO;2-J

By:

Mynbaeva, M.;
Bazhenov, N.;
Mynbaev, K.;
Evstropov, V.;
Saddow, S.E.;
Koshka, Y.;
Melnik, Y.

Publication type:

Article

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Salii, R. A.;
Nadtochiy, A. M.;
Kalyuzhnyy, N. A.

Publication type:

Article

Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells.

Published in:

International Journal of Photoenergy, 2014, p. 1, doi. 10.1155/2014/836284

By:

Kalyuzhnyy, N. A.;
Evstropov, V. V.;
Lantratov, V. M.;
Mintairov, S. A.;
Mintairov, M. A.;
Gudovskikh, A. S.;
Luque, A.;
Andreev, V. M.

Publication type:

Article

Dark current-voltage characteristic of triple-junction solar cells: Their relation with the efficiency and the influence of passivating treatments.

Published in:

Technical Physics, 2014, v. 59, n. 6, p. 879, doi. 10.1134/S1063784214060152

By:

Lebedeva, N.;
Usikova, A.;
Evstropov, V.;
Lebedev, M.;
Ulin, V.;
Lantratov, V.;
Andreev, V.

Publication type:

Article

Recombination in GaAs p-i-n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities.

Published in:

Semiconductors, 2018, v. 52, n. 10, p. 1244, doi. 10.1134/S1063782618100135

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Salii, R. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

On current spreading in solar cells: a two-parameter tube model.

Published in:

Semiconductors, 2016, v. 50, n. 7, p. 970, doi. 10.1134/S1063782616070162

By:

Mintairov, M.;
Evstropov, V.;
Mintairov, S.;
Timoshina, N.;
Shvarts, M.;
Kalyuzhnyy, N.

Publication type:

Article

Estimation of the potential efficiency of a multijunction solar cell at a limit balance of photogenerated currents.

Published in:

Semiconductors, 2015, v. 49, n. 5, p. 668, doi. 10.1134/S1063782615050164

By:

Mintairov, M.;
Evstropov, V.;
Mintairov, S.;
Shvarts, M.;
Timoshina, N.;
Kalyuzhnyy, N.

Publication type:

Article

Electrical properties of Pd-oxide-InP structures.

Published in:

Semiconductors, 2015, v. 49, n. 3, p. 364, doi. 10.1134/S1063782615030094

By:

Grebenshchikova, E.;
Evstropov, V.;
Il'inskaya, N.;
Mel'nikov, Yu.;
Serebrennikova, O.;
Sidorov, V.;
Sherstnev, V.;
Yakovlev, Yu.

Publication type:

Article

Subtractive method for obtaining the dark current-voltage characteristic and its types for the residual (nongenerating) part of a multi-junction solar cell.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 653, doi. 10.1134/S1063782614050133

By:

Mintairov, M.;
Evstropov, V.;
Kalyuzhnyy, N.;
Mintairov, S.;
Shvarts, M.;
Timoshina, N.;
Salii, R.;
Lantratov, V.

Publication type:

Article

Photoelectric determination of the series resistance of multijunction solar cells.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1051, doi. 10.1134/S1063782612080143

By:

Mintairov, M.;
Evstropov, V.;
Kalyuzhnyi, N.;
Mintairov, C.;
Timoshina, N.;
Shvartz, M.;
Lantratov, V.

Publication type:

Article

Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1520, doi. 10.1134/S106378261011028X

By:

Kalyuzhnyy, N.;
Gudovskikh, A.;
Evstropov, V.;
Lantratov, V.;
Mintairov, S.;
Timoshina, N.;
Shvarts, M.;
Andreev, V.

Publication type:

Article

Current flow and potential efficiency of solar cells based on GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 644, doi. 10.1134/S1063782609050200

By:

Andreev, V. M.;
Evstropov, V. V.;
Kalinovsky, V. S.;
Lantratov, V. M.;
Khvostikov, V. P.

Publication type:

Article

The effect of damaging radiation ( p, e, γ) on photovoltaic and tunneling GaAs and GaSb p-n junctions.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 732, doi. 10.1134/S1063782607060231

By:

Andreev, V.;
Evstropov, V.;
Kalinovskiĭ, V.;
Lantratov, V.;
Khvostikov, V.

Publication type:

Article

Dependence of GaN Photoluminescence on the Excitation Intensity.

Published in:

Semiconductors, 2002, v. 36, n. 10, p. 1128, doi. 10.1134/1.1513856

By:

Bessolov, V. N.;
Evstropov, V. V.;
Kompan, M. E.;
Mesh, M. V.

Publication type:

Article

The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.

Published in:

Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428

By:

Evstropov, V. V.;
Dzhumaeva, M.;
Zhilyaev, Yu. V.;
Nazarov, N.;
Sitnikova, A. A.;
Fedorov, L. M.

Publication type:

Article

Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.

Published in:

Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092

By:

Evstropov, V. V.;
Zhilyaev, Yu. V.;
Dzhumaeva, M.;
Nazarov, N.

Publication type:

Article

Increasing the Efficiency of Triple-Junction Solar Cells Due to the Metamorphic InGaAs Subcell.

Published in:

Technical Physics Letters, 2023, v. 49, p. S81, doi. 10.1134/S1063785023900431

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Nakhimovich, M. V.;
Saliy, R. A.;
Shvarts, M. Z.;
Kalyuzhniy, N. A.

Publication type:

Article

A GalnP-Based Photo-Converter of Laser Radiation with an Efficiency of 46.7% at a Wavelength of 600 nm.

Published in:

Technical Physics Letters, 2023, v. 49, p. S78, doi. 10.1134/S106378502390042X

By:

Mintairov, S. A.;
Evstropov, V. V.;
Mintairov, M. A.;
Nakhimovich, M. V.;
Salii, R. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

The Influence of the Number of Rows of GaInAs Quantum Objects on the Saturation Current of GaAs Photoconverters.

Published in:

Technical Physics Letters, 2020, v. 46, n. 6, p. 599, doi. 10.1134/S106378502006022X

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Nadtochii, A. M.;
Salii, R. A.;
Shvarts, M. Z.;
Kalyuzhnyi, N. A.

Publication type:

Article

Finding the Energy Gap of Ga1 –xInxAs p–n Junctions on a Metamorphic Buffer from the Photocurrent Spectrum.

Published in:

Technical Physics Letters, 2020, v. 46, n. 4, p. 332, doi. 10.1134/S1063785020040112

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Shvartz, M. Z.;
Kalyuzhnyi, N. A.

Publication type:

Article

Anomalies in Photovoltaic Characteristics of Multijunction Solar Cells at Ultrahigh Solar Light Concentrations.

Published in:

Technical Physics Letters, 2019, v. 45, n. 11, p. 1100, doi. 10.1134/S1063785019110099

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article