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The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions.
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- Semiconductors, 2019, v. 53, n. 16, p. 2085, doi. 10.1134/S1063782619120121
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Investigation of the Spectrum of Exciton Excited States in Self-Organized InAs/AlGaAs Quantum Dots.
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- Acta Physica Polonica: A, 2019, v. 136, n. 4, p. 613, doi. 10.12693/APhysPolA.136.613
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- Article
Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.
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- Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056
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- Article
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 1, p. 93, doi. 10.1134/S1063782618010062
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- Article
AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm.
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- Journal of Electronic Materials, 2017, v. 46, n. 7, p. 3888, doi. 10.1007/s11664-016-5091-3
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Four-junction heterovalent solar cells based on II-VI/III-V/Ge coherent and metamorphic heterostructures.
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- Physica Status Solidi (B), 2016, v. 253, n. 8, p. 1503, doi. 10.1002/pssb.201600064
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- Article
Optical studies of carriers' vertical transport in the alternately-strained ZnSSe/CdSe superlattice.
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- Semiconductors, 2015, v. 49, n. 3, p. 352, doi. 10.1134/S1063782615030070
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CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1096, doi. 10.12693/APhysPolA.126.1096
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Structural and Optical Properties of Alternately-Strained ZnSxSe<sub>1-x</sub>/CdSe Superlattices with Effective Band-Gap 2.52.6 eV.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1156, doi. 10.12693/APhysPolA.126.1156
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- Article
Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface.
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- Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1184, doi. 10.12693/APhysPolA.126.1184
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- Article
Transport parameters and optical properties of selectively doped Ga(Al)As/Zn(Mn)Se heterovalent structures with a two-dimensional hole channel.
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- Semiconductors, 2014, v. 48, n. 1, p. 30, doi. 10.1134/S1063782614010126
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- Article