Found: 10
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Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Publication type:
- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 14, p. 1164, doi. 10.1049/el.2014.1747
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- Publication type:
- Article
X-band 100 W solid-state power amplifier using a 0.25 μM GaN HEMT technology.
- Published in:
- Microwave & Optical Technology Letters, 2015, v. 57, n. 1, p. 212, doi. 10.1002/mop.28814
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- Article
Characteristics of a 60 GHz MMIC mixer with an open stub microstrip line.
- Published in:
- Microwave & Optical Technology Letters, 2010, v. 52, n. 6, p. 1341, doi. 10.1002/mop.25191
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- Article
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems.
- Published in:
- ETRI Journal, 2017, v. 39, n. 1, p. 62, doi. 10.4218/etrij.17.0116.0173
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- Article
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems.
- Published in:
- ETRI Journal, 2016, v. 38, n. 6, p. 1, doi. 10.4218/etrij.17.0116.0173
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- Publication type:
- Article
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISHFET.
- Published in:
- ETRI Journal, 2016, v. 38, n. 4, p. 675, doi. 10.4218/etrij.16.0015.0040
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- Article
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure.
- Published in:
- ETRI Journal, 2013, v. 35, n. 4, p. 566, doi. 10.4218/etrij.13.1912.0029
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- Article
Optimization of a Birefringence-Enhanced- Waveguide-Based Polarization Beam Splitter.
- Published in:
- ETRI Journal, 2012, v. 34, n. 6, p. 946, doi. 10.4218/etrij.12.0212.0186
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- Article
40 Gb/s Traveling-Wave Electroabsorption Modulator-Integrated DFB Lasers Fabricated Using Selective Area Growth.
- Published in:
- ETRI Journal, 2009, v. 31, n. 6, p. 765, doi. 10.4218/etrij.09.1209.0039
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- Article