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Crystalline Defects Induced during MPCVD Lateral Homoepitaxial Diamond Growth.
- Published in:
- Nanomaterials (2079-4991), 2018, v. 8, n. 10, p. 814, doi. 10.3390/nano8100814
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- Article
Control of the Alumina Microstructure to Reduce Gate Leaks in Diamond MOSFETs.
- Published in:
- Nanomaterials (2079-4991), 2018, v. 8, n. 8, p. 584, doi. 10.3390/nano8080584
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- Article
Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth.
- Published in:
- Nanomaterials (2079-4991), 2018, v. 8, n. 7, p. 480, doi. 10.3390/nano8070480
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- Article
Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 8, p. 1, doi. 10.1002/pssa.202400085
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- Article
Diamonds in the Current: Navigating Challenges for the Integration of Diamond in Power Electronics.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 8, p. 1, doi. 10.1002/pssa.202400085
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- Publication type:
- Article
MPCVD Diamond Lateral Growth Through Microterraces to Reduce Threading Dislocations Density.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 11, p. n/a, doi. 10.1002/pssa.201700242
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- Article
Influence of methane concentration on MPCVD overgrowth of 100-oriented etched diamond substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 10, p. 2570, doi. 10.1002/pssa.201600182
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- Article
Electrical activity of (100) n-type diamond with full donor site incorporation of phosphorus.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 11, p. 2454, doi. 10.1002/pssa.201532206
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- Article