Found: 20
Select item for more details and to access through your institution.
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence.
- Published in:
- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5138, doi. 10.1007/s11664-020-08159-x
- By:
- Publication type:
- Article
Efficient carrier-injection and electron-confinement in UV-B light-emitting diodes.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 210, doi. 10.1002/pssa.201532479
- By:
- Publication type:
- Article
In-situ observation of InGaN quantum well decomposition during growth of laser diodes.
- Published in:
- Crystal Research & Technology, 2015, v. 50, n. 6, p. 499, doi. 10.1002/crat.201500073
- By:
- Publication type:
- Article
Enhanced quantum efficiency of AlGaN photodetectors by patterned growth.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 5, p. 1005, doi. 10.1002/pssa.201431680
- By:
- Publication type:
- Article
Anisotropic Responsivity of AlGaN Metal-Semiconductor-Metal Photodetectors on Epitaxial Laterally Overgrown AlN/Sapphire Templates.
- Published in:
- Journal of Electronic Materials, 2014, v. 43, n. 4, p. 833, doi. 10.1007/s11664-013-2955-7
- By:
- Publication type:
- Article
Characterization of growth defects in thin GaN layers with X-ray microbeam.
- Published in:
- Physica Status Solidi (B), 2007, v. 244, n. 5, p. 1735, doi. 10.1002/pssb.200675113
- By:
- Publication type:
- Article
Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction.
- Published in:
- Physica Status Solidi (B), 2006, v. 243, n. 7, p. 1508, doi. 10.1002/pssb.200565442
- By:
- Publication type:
- Article
KINETICS, MICROSTRUCTURE AND STRAIN IN GaN THIN FILMS GROWN VIA PENDEO-EPITAXY.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 21, doi. 10.1142/S0129156404002211
- By:
- Publication type:
- Article
STRAIN OF GaN LAYERS GROWN USING 6H-SiC(0001) SUBSTRATES WITH DIFFERENT BUFFER LAYERS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 1, p. 39, doi. 10.1142/S0129156404002223
- By:
- Publication type:
- Article
Microstructural Evaluation of Compositional Fluctuations in AlGaN Grown on 6H-Sic Substrates.
- Published in:
- Microscopy & Microanalysis, 2003, v. 9, p. 256, doi. 10.1017/s1431927603023146
- By:
- Publication type:
- Article
Optical Phonons in Hexagonal Al<sub> x</sub>In<sub> y</sub>Ga<sub>1- x- y</sub>N ( y ≈ 0.12).
- Published in:
- Physica Status Solidi (B), 2002, v. 234, n. 3, p. 970, doi. 10.1002/1521-3951(200212)234:3<970::AID-PSSB970>3.0.CO;2-4
- By:
- Publication type:
- Article
Analysis of Time-Resolved Donor-Acceptor-Pair Recombination in MBE and MOVPE Grown GaN : Mg.
- Published in:
- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 379, doi. 10.1002/1521-3951(200111)228:2<379::AID-PSSB379>3.0.CO;2-V
- By:
- Publication type:
- Article
Infrared Ellipsometry - a Novel Tool for Characterization of Group-III Nitride Heterostructures for Optoelectronic Device Applications.
- Published in:
- Physica Status Solidi (B), 2001, v. 228, n. 2, p. 437, doi. 10.1002/1521-3951(200111)228:2<437::AID-PSSB437>3.0.CO;2-E
- By:
- Publication type:
- Article
Defect Complexes in Highly Mg-Doped GaN Studied by Raman Spectroscopy.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 551, doi. 10.1002/(SICI)1521-3951(199911)216:1<551::AID-PSSB551>3.0.CO;2-S
- By:
- Publication type:
- Article
Optical Spectroscopy of Mg- and C-Related Donor and Acceptor Levels in GaN Grown by MBE.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 557, doi. 10.1002/(SICI)1521-3951(199911)216:1<557::AID-PSSB557>3.0.CO;2-4
- By:
- Publication type:
- Article
Incorporation of Deep Defects in GaN Induced by Doping and Implantation Processes.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 587, doi. 10.1002/(SICI)1521-3951(199911)216:1<587::AID-PSSB587>3.0.CO;2-T
- By:
- Publication type:
- Article
Influence of Carbon Doping on the Photoconductivity in GaN Layers.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 593, doi. 10.1002/(SICI)1521-3951(199911)216:1<593::AID-PSSB593>3.0.CO;2-4
- By:
- Publication type:
- Article
Correlations between Structural, Electrical and Optical Properties of GaN Layers Grown by Molecular Beam Epitaxy.
- Published in:
- Physica Status Solidi (B), 1999, v. 216, n. 1, p. 659, doi. 10.1002/(SICI)1521-3951(199911)216:1<659::AID-PSSB659>3.0.CO;2-T
- By:
- Publication type:
- Article
p-Type Doping of ZnSe. On the Properties of Nitrogen in ZnSe:N.
- Published in:
- Physica Status Solidi (B), 1995, v. 187, n. 2, p. 393, doi. 10.1002/pssb.2221870218
- By:
- Publication type:
- Article
Electrical Contacts to p-ZnSe Based on HgSe and ZnTe.
- Published in:
- Physica Status Solidi (B), 1995, v. 187, n. 2, p. 439, doi. 10.1002/pssb.2221870224
- By:
- Publication type:
- Article