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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation.
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- Physica Status Solidi (B), 2024, v. 261, n. 5, p. 1, doi. 10.1002/pssb.202400060
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Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-00102-2
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- Article
Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5196, doi. 10.1007/s11664-020-08081-2
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Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates.
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- Nanoscale Research Letters, 2018, v. 13, n. 1, p. 1, doi. 10.1186/s11671-018-2804-y
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Carrier Trapping by Vacancy‐Type Defects in Mg‐Implanted GaN Studied Using Monoenergetic Positron Beams.
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- Physica Status Solidi (B), 2018, v. 255, n. 4, p. 1, doi. 10.1002/pssb.201700521
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- Article
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam.
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- Physica Status Solidi (B), 2015, v. 252, n. 12, p. 2794, doi. 10.1002/pssb.201552345
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- Article
Characteristic Analysis of a Micro DC-DC Converter for Portable Electronic Devices and an Improvement of Transient Response Characteristic.
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- Electrical Engineering in Japan, 2011, v. 175, n. 3, p. 56, doi. 10.1002/eej.21081
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- Article