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The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient: an updated Monte Carlo analysis.
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- Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 3, p. 218, doi. 10.1007/s10854-009-9896-1
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- Article
Sample preparation technique for cross-sectional transmission electron microscopy of quantum wire structures.
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- Microscopy Research & Technique, 1993, v. 26, n. 2, p. 157, doi. 10.1002/jemt.1070260208
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- Article
Electrical properties of InGaN grown by molecular beam epitaxy.
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- Physica Status Solidi (B), 2008, v. 245, n. 5, p. 868, doi. 10.1002/pssb.200778710
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- Article
NOVEL HIGH TEMPERATURE ANNEALED SCHOTTKY METAL FOR GaN DEVICES.
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- International Journal of High Speed Electronics & Systems, 2011, v. 20, n. 3, p. 417, doi. 10.1142/S0129156411006702
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- Article
SIMULATION AND EXPERIMENTAL RESULTS ON GaN BASED ULTRA-SHORT PLANAR NEGATIVE DIFFERENTIAL CONDUCTIVITY DIODES FOR THz POWER GENERATION.
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- International Journal of High Speed Electronics & Systems, 2009, v. 19, n. 1, p. 1, doi. 10.1142/S0129156409006035
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- Article
FOCUSED THERMAL BEAM DIRECT PATTERNING ON INGAN DURING MOLECULAR BEAM EPITAXY.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 97, doi. 10.1142/S0129156407004291
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- Article
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278
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- Article
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES.
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- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 173, doi. 10.1142/S0129156407004394
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- Article
BALLISTIC ELECTRON ACCELERATION NEGATIVE-DIFFERENTIAL-CONDUCTIVITY DEVICES.
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- International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 437, doi. 10.1142/S012915640600376X
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- Article
INFLUENCE OF THE N-DIFFUSION LAYER ON THE CHANNEL CURRENT AND THE BREAKDOWN VOLTAGE IN 4H-SiC SIT.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 285, doi. 10.1142/S0129156404003034
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- Article
SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD- PLATE SiC MESFETs.
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- International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 260, doi. 10.1142/S0129156404002995
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- Article
High-Speed Direct Modulation of Semiconductor Lasers.
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- International Journal of High Speed Electronics & Systems, 1997, v. 8, n. 3, p. 417, doi. 10.1142/S0129156497000159
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- Article