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Investigation of effects on dielectric properties of different doping concentrations of Au/Gr-PVA/p-Si structures at 0.1 and 1 MHz at room temperature.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 19, p. 16324, doi. 10.1007/s10854-020-04181-1
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- Article
Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer Diyotların Üretimi ve Temel Elektriksel Özelliklerinin İncelenmesi.
- Published in:
- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 1, p. 157, doi. 10.21597/jist.799054
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- Article
Investigation of the Frequency and Voltage Dependent Dielectric Properties of Au/n-SiC Metal Semiconductor (MS) and Au/Al<sub>2</sub>O<sub>3</sub>/n-SiC Metal-InsulatorSemiconductor (MIS) Structures.
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- Sakarya University Journal of Science (SAUJS) / Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 24, n. 5, p. 1040, doi. 10.16984/saufenbilder.744111
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- Article
Eş Zamanlı Veri Transferi ile Lcr-Metre ve Doğru Akım Kaynaklarının Senkron Çalıştırılması Sağlanarak Yarıiletken Cihazların Karakterizasyonunda Yeni Yöntem Geliştirilmesi
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- Duzce University Journal of Science & Technology, 2023, v. 11, n. 4, p. 1794, doi. 10.29130/dubited.1171603
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- Article
Temperature and Interfacial Layer Effects on the Electrical and Dielectric Properties of Al/(CdS-PVA)/p-Si (MPS) Structures.
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- Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6600, doi. 10.1007/s11664-018-6578-x
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- Article
DETERMINATION OF MAIN ELECTRICAL PARAMETERS OF Au–4H-n-SiC (MS) AND Au–Al<sub>2</sub>O<sub>3</sub>–4H-n-SiC (MIS) DEVICES.
- Published in:
- Surface Review & Letters, 2021, v. 28, n. 05, p. N.PAG, doi. 10.1142/S0218625X21500360
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- Article