Works by Dzhumaeva, M.
Results: 2
The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
- Published in:
- Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
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- Publication type:
- Article
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
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- Publication type:
- Article