The Dislocation Origin and Model of Excess Tunnel Current in GaP p–n Structures.
- Published in:
- Semiconductors, 2000, v. 34, n. 11, p. 1305, doi. 10.1134/1.1325428
- By:
- Publication type:
- Article
Works matching AU Dzhumaeva, M.
Results: 2
1
2
Tunnel excess current in nondegenerate barrier (p–n and m–s) silicon-containing III–V structures.
- Published in:
- Semiconductors, 1997, v. 31, n. 2, p. 115, doi. 10.1134/1.1187092
- By:
- Publication type:
- Article