Works by Dyakonov, L.

Effect of sapphire substrate orientation on the surface morphology and structural quality of thick GaN layers grown by hydride vapor phase epitaxy.

Published in:

Crystallography Reports, 2011, v. 56, n. 2, p. 274, doi. 10.1134/S1063774511020052

By:

• Donskov, A.;
• Dyakonov, L.;
• Kozlova, Yu.;
• Malakhov, S.;
• Mezhennyi, M.;
• Pavlov, V.;
• Yugova, T.

Publication type:

Article