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Magnetoresistance of a HgTe/CdHgTe Double Quantum Well in an In-Plane Magnetic Field.
- Published in:
- JETP Letters, 2023, v. 118, n. 12, p. 899, doi. 10.1134/S0021364023603627
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- Article
Simultaneous Observation of the Cyclotron Resonances of Electrons and Holes in a HgTe/CdHgTe Double Quantum Well under "Optical Gate" Effect.
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- JETP Letters, 2023, v. 118, n. 11, p. 867, doi. 10.1134/S0021364023603536
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- Article
Generation of Long-Wavelength Stimulated Emission in HgCdTe Quantum Wells with an Increased Auger Recombination Threshold.
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- JETP Letters, 2023, v. 118, n. 5, p. 309, doi. 10.1134/S0021364023602415
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- Article
PT-Symmetric Microwave Photoconductivity in Heterostructures Based on the Hg<sub>1 −</sub><sub>x</sub>Cd<sub>x</sub>Te Topological Phase.
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- JETP Letters, 2023, v. 118, n. 5, p. 339, doi. 10.1134/S0021364023602385
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- Article
Energy Spectrum of the Valence Band in HgTe Quantum Wells on the Way from a Two- to Three-Dimensional Topological Insulator.
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- JETP Letters, 2023, v. 117, n. 12, p. 916, doi. 10.1134/S0021364023601240
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- Article
Erratum to: Several Articles in JETP Letters.
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- 2022
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- Correction Notice
Laser Generation at Wavelengths 4.1–5.1 μm of Cd<sub>x</sub>Hg<sub>1–x</sub>Te/Cd<sub>y</sub>Hg<sub>1–y</sub>Te Quantum-Well Heterostructures with Microdisk Resonators.
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- Journal of Applied Spectroscopy, 2022, v. 89, n. 5, p. 844, doi. 10.1007/s10812-022-01435-0
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- Article
Features of Magnetotransport in a HgTe/CdHgTe Double Quantum Well with an Intermediate Degree of Band Inversion.
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- JETP Letters, 2022, v. 116, n. 6, p. 385, doi. 10.1134/S0021364022601646
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- Article
Problems in the Development of Efficient Biotechnology for the Synthesis of Valuable Components from Microalgae Biomass.
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- Theoretical Foundations of Chemical Engineering, 2022, v. 56, n. 4, p. 425, doi. 10.1134/S0040579522040224
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- Article
Admittance of barrier nanostructures based on MBE HgCdTe.
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- Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
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- Article
Engineering topological phases in triple HgTe/CdTe quantum wells.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-06431-0
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- Article
Edge and Bulk Transport in a Two-Dimensional Topological Insulator Based on a CdHgTe Quantum Well.
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- JETP Letters, 2022, v. 115, n. 4, p. 202, doi. 10.1134/S0021364022040099
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- Article
Preparation of Atomically Clean and Structurally Ordered Surfaces of Epitaxial CdTe Films for Subsequent Epitaxy.
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- Semiconductors, 2021, v. 55, n. 1, p. S62, doi. 10.1134/S1063782621090220
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- Article
Effect of Internal Optical Losses on the Generation of Mid-IR Stimulated Emission in Waveguide Heterostructures with HgCdTe/CdHgTe Quantum Wells.
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- Semiconductors, 2021, v. 55, n. 12, p. 899, doi. 10.1134/S1063782621100262
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- Article
Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity.
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- Semiconductors, 2021, v. 55, n. 10, p. 785, doi. 10.1134/S1063782621090189
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- Article
Dark Currents of Unipolar Barrier Structures Based on Mercury Cadmium Telluride for Long-Wave IR Detectors.
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- Russian Physics Journal, 2021, v. 64, n. 5, p. 763, doi. 10.1007/s11182-021-02390-7
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- Article
An Experimental Study of the Dynamic Resistance in Surface Leakage Limited nBn Structures Based on HgCdTe Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4599, doi. 10.1007/s11664-021-09001-8
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- Article
Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-91141-2
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- Article
Accumulation of Arsenic Implantation-Induced Donor Defects in Hg0.7Cd0.3Te Heteroepitaxial Structures.
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- Journal of Electronic Materials, 2021, v. 50, n. 6, p. 3714, doi. 10.1007/s11664-021-08877-w
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- Article
Influence of As+ Ion Implantation on Properties of MBE HgCdTe Near-Surface Layer Characterized by Metal–Insulator–Semiconductor Techniques.
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- Journal of Electronic Materials, 2021, v. 50, n. 4, p. 2323, doi. 10.1007/s11664-021-08752-8
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- Article
Non-local terahertz photoconductivity in the topological phase of Hg1−xCdxTe.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-81099-6
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- Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
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- Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
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- Article
Impedance of MIS Devices Based on nBn Structures from Mercury Cadmium Telluride.
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- Russian Physics Journal, 2020, v. 63, n. 6, p. 907, doi. 10.1007/s11182-020-02117-0
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- Article
Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion.
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- Semiconductors, 2020, v. 54, n. 10, p. 1371, doi. 10.1134/S1063782620100322
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- Article
Transport Features in the Topological Phase Hg<sub>0.87</sub>Cd<sub>0.13</sub>Te under Terahertz Photoexcitation.
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- Semiconductors, 2020, v. 54, n. 9, p. 1064, doi. 10.1134/S1063782620090109
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- Article
Electrical properties of n-HgCdTe MIS structures with HgTe single quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2489, doi. 10.1007/s13204-019-01081-7
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- Article
TEM studies of structural defects in HgTe/HgCdTe quantum wells.
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- Applied Nanoscience, 2020, v. 10, n. 8, p. 2867, doi. 10.1007/s13204-019-01142-x
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- Article
Effective Mass and g-Factor of Two-Dimentional HgTe Γ8-Band Electrons: Shubnikov-de Haas Oscillations.
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- Semiconductors, 2020, v. 54, n. 8, p. 982, doi. 10.1134/S1063782620080163
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- Article
Admittance of Barrier Structures Based on Mercury Cadmium Telluride.
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- Russian Physics Journal, 2020, v. 63, n. 3, p. 432, doi. 10.1007/s11182-020-02054-y
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- Article
Magnetic Susceptibility Measurements in HgTe Quantum Wells in a Perpendicular Magnetic Field.
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- JETP Letters, 2020, v. 111, n. 11, p. 633, doi. 10.1134/S0021364020110041
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- Article
A new design of scanning IR detectors.
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- Opto-Electronics Review, 2020, v. 28, n. 2, p. 93, doi. 10.24425/opelre.2020.132505
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- Article
Probing States of a Double Acceptor in CdHgTe Heterostructures via Optical Gating.
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- JETP Letters, 2020, v. 111, n. 10, p. 575, doi. 10.1134/S0021364020100124
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- Publication type:
- Article
Investigation of the Effect of Thermal Annealing on the Electrical Properties of the Near-Surface Layer of MBE n-HgCdTe Using MIS Techniques.
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- Journal of Electronic Materials, 2020, v. 49, n. 5, p. 3202, doi. 10.1007/s11664-020-08005-0
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- Article
HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 3, p. 316, doi. 10.1134/S1064226920030122
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- Article
Apparent PT-symmetric terahertz photoconductivity in the topological phase of Hg1−xCdxTe-based structures.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-59280-0
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- Publication type:
- Article
Residual-Photoconductivity Spectra in HgTe/CdHgTe Quantum-Well Heterostructures.
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- Semiconductors, 2019, v. 53, n. 10, p. 1363, doi. 10.1134/S106378261910021X
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- Article
A Megapixel Matrix Photodetector of the Middle Infrared Range.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1011, doi. 10.1134/S1064226919090043
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- Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1024, doi. 10.1134/S1064226919090171
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- Article
Modeling and Optimization of Cyclic Adsorption Enrichment of Gas Mixtures with Hydrogen.
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- Theoretical Foundations of Chemical Engineering, 2019, v. 53, n. 5, p. 781, doi. 10.1134/S0040579519040195
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- Publication type:
- Article
Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study.
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- Applied Nanoscience, 2019, v. 9, n. 5, p. 725, doi. 10.1007/s13204-018-0679-y
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- Article
Optimizing Pressure-Swing Adsorption Processes and Installations for Gas Mixture Purification and Separation.
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- CET Journal - Chemical Engineering Transactions, 2019, v. 74, p. 883, doi. 10.3303/CET1974148
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- Publication type:
- Article
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 289, doi. 10.1134/S1064226919030197
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- Article
Electronic thermal conductivity in 2D topological insulator in a HgTe quantum well.
- Published in:
- Scientific Reports, 2019, v. 9, n. 1, p. 1, doi. 10.1038/s41598-018-36705-5
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- Publication type:
- Article
Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures.
- Published in:
- Semiconductors, 2018, v. 52, n. 12, p. 1586, doi. 10.1134/S1063782618120230
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- Article
Magnetoconductivity of a Mercury Cadmium Telluride Resonant THz Detector.
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- Acta Physica Polonica: A, 2018, v. 134, n. 4, p. 973, doi. 10.12693/APhysPolA.134.973
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- Article
Photoluminescence of Molecular Beam Epitaxy-Grown Mercury Cadmium Telluride: Comparison of HgCdTe/GaAs and HgCdTe/Si Technologies.
- Published in:
- Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4731, doi. 10.1007/s11664-018-6364-9
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- Publication type:
- Article
Magnetooptical Studies and Stimulated Emission in Narrow Gap HgTe/CdHgTe Structures in the Very Long Wavelength Infrared Range.
- Published in:
- Semiconductors, 2018, v. 52, n. 4, p. 436, doi. 10.1134/S1063782618040255
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- Publication type:
- Article
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown <italic>n</italic>-Hg<sub>1 - <italic>x</italic></sub>Cd<sub><italic>x</italic></sub>Te (<italic>x</italic> = 0.22-0.23) with the Al<sub>2</sub>O<sub>3</sub> Insulator.
- Published in:
- Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 281, doi. 10.1134/S106422691803021X
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- Article
Admittance of MIS-Structures Based on HgCdTe with a Double-Layer CdTe/Al<sub>2</sub>O<sub>3</sub> Insulator.
- Published in:
- Russian Physics Journal, 2018, v. 60, n. 11, p. 1853, doi. 10.1007/s11182-018-1294-9
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- Article
Defects in Arsenic Implanted р -n- and n -p- Structures Based on MBE Grown CdHgTe Films.
- Published in:
- Russian Physics Journal, 2018, v. 60, n. 10, p. 1752, doi. 10.1007/s11182-018-1278-9
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- Publication type:
- Article