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Spintronics phenomena induced by THz radiation in narrow-gap HgCdTe thin films in an external constant electric field.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 2, p. 185, doi. 10.15407/spqeo24.02.185
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- Article
Intrinsic concentration dependences in the HgCdTe quantum well in the range of the insulator-semimetal topological transition.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014, v. 17, n. 2, p. 179
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- Article
Photoelectrical characteristics of MIS structures on the basis of graded-band-gap n-HgCdTe ( x = 0.21–0.23).
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- Russian Physics Journal, 2006, v. 49, n. 10, p. 1117, doi. 10.1007/s11182-006-0232-4
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The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE.
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- Russian Physics Journal, 2006, v. 49, n. 9, p. 929, doi. 10.1007/s11182-006-0204-8
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- Article
Quantum Hall effect in a quasi-three-dimensional HgTe film.
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- JETP Letters, 2011, v. 93, n. 9, p. 526, doi. 10.1134/S0021364011090104
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- Article
Cyclotron resonance in a two-dimensional semimetal based on a HgTe quantum well.
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- JETP Letters, 2011, v. 93, n. 3, p. 170, doi. 10.1134/S0021364011030088
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- Article
Terahertz spectroscopy of quantum-well narrow-bandgap HgTe/CdTe-based heterostructures.
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- JETP Letters, 2011, v. 92, n. 11, p. 756, doi. 10.1134/S0021364010230086
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- Article
Spin splitting in HgTe/CdHgTe (013) quantum well heterostructures.
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- JETP Letters, 2010, v. 92, n. 1, p. 63, doi. 10.1134/S0021364010130126
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- Article
Two-dimensional electron-hole system in a HgTe-based quantum well.
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- JETP Letters, 2008, v. 87, n. 9, p. 502, doi. 10.1134/S0021364008090117
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Terahertz Photoluminescence of Double Acceptors in Bulky Epitaxial HgCdTe Layers and HgTe/CdHgTe Structures with Quantum Wells.
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- Journal of Experimental & Theoretical Physics, 2018, v. 127, n. 6, p. 1125, doi. 10.1134/S1063776118100035
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- Article
Temperature-driven massless Kane fermions in HgCdTe crystals.
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- Nature Communications, 2016, v. 7, n. 8, p. 12576, doi. 10.1038/ncomms12576
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- Article
A NEW TWO-DIMENSIONAL ELECTRON-HOLE SYSTEM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 12/13, p. 2888, doi. 10.1142/S0217979209062499
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- Article
Determining the normal and lateral dark current components in n-p photodiodes based on p-Cd<sub> x</sub>Hg<sub>1 − x</sub>Te heteroepitaxial structures with x = 0.22.
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- Technical Physics Letters, 2009, v. 35, n. 6, p. 552, doi. 10.1134/S1063785009060200
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- Article
Forming n-p junctions based on p-CdHgTe with low charge carrier density.
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- Technical Physics Letters, 2006, v. 32, n. 9, p. 802, doi. 10.1134/S1063785006090203
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- Article
A new approach to the optimal design of industrial chemical-engineering apparatuses.
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- Theoretical Foundations of Chemical Engineering, 2012, v. 46, n. 5, p. 437, doi. 10.1134/S0040579512040112
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Nonisothermal method for calculating the mold equipment of an apparatus for compacting the hot products of self-propagating high-temperature synthesis.
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- Theoretical Foundations of Chemical Engineering, 2010, v. 44, n. 2, p. 192, doi. 10.1134/S0040579510020107
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Integrated design of power- and resource-saving chemical processes and process control systems: Strategy, methods, and application.
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- Theoretical Foundations of Chemical Engineering, 2008, v. 42, n. 1, p. 26, doi. 10.1134/S0040579508010041
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- Article
Determining the Compositional Profile of HgTe/Cd<sub>x</sub>Hg<sub>1 –</sub> <sub>x</sub>Te Quantum Wells by Single-Wavelength Ellipsometry.
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- Optics & Spectroscopy, 2019, v. 127, n. 2, p. 340, doi. 10.1134/S0030400X19080253
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- Article
Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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- Journal of Communications Technology & Electronics, 2023, v. 68, p. S132, doi. 10.1134/S1064226923140176
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Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1036, doi. 10.1134/S1064226923090279
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Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors.
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- Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 334, doi. 10.1134/S1064226923030208
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Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 3, p. 308, doi. 10.1134/S1064226922030172
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Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers.
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- Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 337, doi. 10.1134/S1064226921030219
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High-temperature photoluminescence of CdHgTe solid solutions grown by molecular-beam epitaxy.
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- Technical Physics, 2013, v. 58, n. 10, p. 1536, doi. 10.1134/S1063784213100198
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Observation of three-dimensional massless Kane fermions in a zinc-blende crystal.
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- Nature Physics, 2014, v. 10, n. 3, p. 233, doi. 10.1038/nphys2857
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- Article
Origin of Structure Inversion Asymmetry in Double HgTe Quantum Wells.
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- JETP Letters, 2022, v. 116, n. 8, p. 547, doi. 10.1134/S0021364022601889
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- Article
Photothermal Ionization Spectroscopy of Mercury Vacancies in HgCdTe Epitaxial Films.
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- JETP Letters, 2021, v. 113, n. 6, p. 402, doi. 10.1134/S0021364021060072
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- Article
Effects of the Electron—Electron Interaction in the Magneto-Absorption Spectra of HgTe/CdHgTe Quantum Wells with an Inverted Band Structure.
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- JETP Letters, 2020, v. 112, n. 8, p. 508, doi. 10.1134/S0021364020200059
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- Article
Shubnikov—de Haas Oscillations in a Three-Dimensional Topological Insulator Based on a Strained HgTe Film in an Inclined Magnetic Field.
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- JETP Letters, 2019, v. 109, n. 12, p. 799, doi. 10.1134/S0021364019120051
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- Article
Features of Photoluminescence of Double Acceptors in HgTe/CdHgTe Heterostructures with Quantum Wells in a Terahertz Range.
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- JETP Letters, 2019, v. 109, n. 10, p. 657, doi. 10.1134/S0021364019100114
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Magnetoabsorption in HgCdTe/CdHgTe Quantum Wells in Tilted Magnetic Fields.
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- JETP Letters, 2019, v. 109, n. 3, p. 191, doi. 10.1134/S002136401903007X
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- Article
Polarization-Sensitive Fourier-Transform Spectroscopy of HgTe/CdHgTe Quantum Wells in the Far Infrared Range in a Magnetic Field.
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- JETP Letters, 2018, v. 108, n. 5, p. 329, doi. 10.1134/S0021364018170058
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- Article
Terahertz Cyclotron Photoconductivity in a Highly Unbalanced Two-Dimensional Electron-Hole System.
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- JETP Letters, 2018, v. 108, n. 4, p. 247, doi. 10.1134/S0021364018160075
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Terahertz Photoconductivity in HgCdTe near the transition from the direct to inverted spectrum.
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- JETP Letters, 2017, v. 106, n. 3, p. 162, doi. 10.1134/S0021364017150061
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Capacitance spectroscopy of a system of gapless Dirac fermions in a HgTe quantum well.
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- JETP Letters, 2016, v. 104, n. 12, p. 859, doi. 10.1134/S0021364016240103
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- Article
Zeeman splitting of the conduction band of HgTe quantum wells with a semimetallic spectrum.
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- JETP Letters, 2016, v. 104, n. 4, p. 241, doi. 10.1134/S0021364016160098
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- Article
Conductance of a lateral p- n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states.
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- JETP Letters, 2015, v. 101, n. 7, p. 469, doi. 10.1134/S0021364015070115
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Anticrossing of Landau levels in HgTe/CdHgTe (013) quantum wells with an inverted band structure.
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- JETP Letters, 2015, v. 100, n. 12, p. 790, doi. 10.1134/S0021364014240175
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- Article
Quantum hall effect in a system of gapless Dirac fermions in HgTe quantum wells.
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- JETP Letters, 2015, v. 100, n. 11, p. 724, doi. 10.1134/S0021364014230076
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- Article
Dual-wavelength stimulated emission from a double-layer CdHgTe structure at wavelengths of 2 and 3 μm.
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- JETP Letters, 2013, v. 97, n. 6, p. 358, doi. 10.1134/S0021364013060131
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- Article
Cyclotron resonance in HgTe/CdTe(013) narrowband heterostructures in quantized magnetic fields.
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- JETP Letters, 2012, v. 95, n. 8, p. 406, doi. 10.1134/S002136401208005X
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- Article
Cyclotron resonance of Dirac ferions in HgTe quantum wells.
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- JETP Letters, 2012, v. 94, n. 11, p. 816, doi. 10.1134/S002136401123007X
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Electron probe microanalysis of HgCdTe heteroepitaxial structures with CdTe buffer layers.
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- Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, v. 5, n. 5, p. 934, doi. 10.1134/S1027451011100077
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- Article
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells.
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- Semiconductors, 2016, v. 50, n. 12, p. 1651, doi. 10.1134/S1063782616120174
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- Article
Magnetospectroscopy of double HgTe/CdHgTe quantum wells.
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- Semiconductors, 2016, v. 50, n. 11, p. 1532, doi. 10.1134/S1063782616110063
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- Article
Magnetoabsorption in narrow-gap HgCdTe epitaxial layers in the terahertz range.
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- Semiconductors, 2013, v. 47, n. 12, p. 1545, doi. 10.1134/S1063782613120099
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- Article
Specific features of the spectra and relaxation kinetics of long-wavelength photoconductivity in narrow-gap HgCdTe epitaxial films and heterostructures with quantum wells.
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- Semiconductors, 2013, v. 47, n. 11, p. 1438, doi. 10.1134/S1063782613110183
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- Article
HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays.
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- Semiconductors, 2011, v. 45, n. 3, p. 385, doi. 10.1134/S1063782611030250
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- Article
Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.
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- Semiconductors, 2008, v. 42, n. 11, p. 1298, doi. 10.1134/S1063782608110109
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- Article
Dependence of the electrical parameters of MBE-grown Cd<sub> x </sub>Hg<sub>1 − x </sub>Te films on the level of doping with indium.
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- Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031
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- Article