Works by Dupuis, Russell

Results: 19

Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1089, doi. 10.1002/pssb.201451571

By:

Li, Xiao‐Hang;
Wang, Shuo;
Xie, Hongen;
Wei, Yong O.;
Kao, Tsung‐Ting;
Satter, Md. Mahbub;
Shen, Shyh‐Chiang;
Douglas Yoder, Paul;
Detchprohm, Theeradetch;
Dupuis, Russell D.;
Fischer, Alec M.;
Ponce, Fernando A.

Publication type:

Article

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 8, p. 1, doi. 10.1002/pssa.202400538

By:

Jeong, Hoon;
Cho, Minkyu;
Xu, Zhiyu;
Mehnke, Frank;
Shen, Shyh‐Chiang;
Detchprohm, Theeradetch;
Dupuis, Russell D.;
Otte, Adam Nepomuk

Publication type:

Article

High–Efficiency Light–Emitting Diodes and Laser Diodes and the Development of “The Alloy Road”.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 14, p. 1, doi. 10.1002/pssa.202100250

By:

Dupuis, Russell D.;
George Craford, M.

Publication type:

Article

Ordered Nanowire Array Blue/Near-UV Light Emitting Diodes.

Published in:

Advanced Materials, 2010, v. 22, n. 42, p. 4749, doi. 10.1002/adma.201002134

By:

Xu, Sheng;
Xu, Chen;
Liu, Ying;
Hu, Youfan;
Yang, Rusen;
Yang, Qing;
Ryou, Jae-Hyun;
Kim, Hee Jin;
Lochner, Zachary;
Choi, Suk;
Dupuis, Russell;
Wang, Zhong Lin

Publication type:

Article

Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production.

Published in:

Materials (1996-1944), 2019, v. 12, n. 12, p. 1925, doi. 10.3390/ma12121925

By:

Key, Daryl;
Letts, Edward;
Tsou, Chuan-Wei;
Ji, Mi-Hee;
Bakhtiary-Noodeh, Marzieh;
Detchprohm, Theeradetch;
Shen, Shyh-Chiang;
Dupuis, Russell;
Hashimoto, Tadao

Publication type:

Article

Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1296, doi. 10.1002/pssa.201532764

By:

Kim, Jeomoh;
Ji, Mi‐Hee;
Detchprohm, Theeradetch;
Dupuis, Russell D.;
Shervin, Shahab;
Ryou, Jae‐Hyun

Publication type:

Article

BAlN thin layers for deep UV applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 745, doi. 10.1002/pssa.201400199

By:

Li, Xin;
Sundaram, Suresh;
Gmili, Youssef El;
Moudakir, Tarik;
Genty, Frédéric;
Bouchoule, Sophie;
Patriarche, Gilles;
Dupuis, Russell D.;
Voss, Paul L.;
Salvestrini, Jean‐Paul;
Ougazzaden, Abdallah

Publication type:

Article

Stimulated emission at 257 nm from optically-pumped Al Ga N/ Al N heterostructure on Al N substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 9, p. 1768, doi. 10.1002/pssa.201329013

By:

Lochner, Zachary;
Li, Xiao‐Hang;
Kao, Tsung‐Ting;
Satter, Md. Mahbub;
Kim, Hee Jin;
Shen, Shyh‐Chiang;
Yoder, P. Douglas;
Ryou, Jae‐Hyun;
Dupuis, Russell D.;
Sun, Kewei;
Wei, Yong;
Li, Ti;
Fischer, Alec;
Ponce, Fernando A.

Publication type:

Article

GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3 MW/cm<sup>2</sup>).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2012, v. 209, n. 3, p. 497, doi. 10.1002/pssa.201100436

By:

Lee, Yi-Che;
Zhang, Yun;
Lochner, Zachary M.;
Kim, Hee-Jin;
Ryou, Jae-Hyun;
Dupuis, Russell D.;
Shen, Shyh-Chiang

Publication type:

Article

High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalanche Photodiodes Grown by MOCVD Fabricated Using Ion-Implantation Isolation.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 8, p. 4462, doi. 10.1007/s11664-021-08981-x

By:

Bakhtiary-Noodeh, Marzieh;
Cho, Minkyu;
Jeong, Hoon;
Xu, Zhiyu;
Tsou, Chuan-Wei;
Cao, Can;
Shen, Shyh-Chiang;
Detchprohm, Theeradetch;
Dupuis, Russell D.

Publication type:

Article

Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 4, p. 2326, doi. 10.1007/s11664-019-07932-x

By:

Chen, Ping;
Park, Young Jae;
Liu, Yuh-Shiuan;
Detchprohm, Theeradetch;
Yoder, P. Douglas;
Shen, Shyh-Chiang;
Dupuis, Russell D.

Publication type:

Article

Digitally Alloyed Modulated Precursor Flow Epitaxial Growth of Ternary AlGaN with Binary AlN and GaN Sub-Layers and Observation of Compositional Inhomogeneity.

Published in:

Journal of Electronic Materials, 2010, v. 39, n. 5, p. 466, doi. 10.1007/s11664-010-1098-3

By:

Kim, Hee Jin;
Choi, Suk;
Yoo, Dongwon;
Ryou, Jae-Hyun;
Hawkridge, Michael E.;
Liliental-Weber, Zuzanna;
Dupuis, Russell D.

Publication type:

Article

Epitaxial Growth and Device Design Optimization of Full-Vertical GaN p-i-n Rectifiers.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 4, p. 353, doi. 10.1007/s11664-006-0069-1

By:

Dongwon Yoo;
Jae Boum Limb;
Jae-Hyun Ryou;
Wonseok Lee;
Dupuis, Russell D.

Publication type:

Article

Digital Etching of III-N Materials Using a Two-Step Ar/KOH Technique.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 771, doi. 10.1007/s11664-006-0137-6

By:

Keogh, David;
Asbeck, Peter;
Chung, Theodore;
Dupuis, Russell D.;
Feng, Milton

Publication type:

Article

Growth of InGaN HBTs by MOCVD.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 695, doi. 10.1007/s11664-006-0123-z

By:

Chung, Theodore;
Limb, Jae;
Jae-Hyun Ryou;
Wonseok Lee;
Peng Li;
Dongwon Yoo;
Xue-Bing Zhang;
Shyh-Chiang Shen;
Dupuis, Russell D.;
Keogh, David;
Asbeck, Peter;
Chukung, Ben;
Feng, Milton;
Zakharov, Dimitri;
Lilienthal-Weber, Zusanne

Publication type:

Article

Influence of Growth Temperature and Growth Rate of p-GaN Layers on the Characteristics of Green Light Emitting Diodes.

Published in:

Journal of Electronic Materials, 2006, v. 35, n. 4, p. 587, doi. 10.1007/s11664-006-0104-2

By:

Wonseok Lee;
Jae Limb;
Jae-Hyun Ryou;
Dongwon Yoo;
Chung, Theodore;
Dupuis, Russell D.

Publication type:

Article

Rethinking phonons: The issue of disorder.

Published in:

NPJ Computational Materials, 2017, v. 3, n. 1, p. N.PAG, doi. 10.1038/s41524-017-0052-9

By:

Seyf, Hamid Reza;
Yates, Luke;
Bougher, Thomas L.;
Graham, Samuel;
Cola, Baratunde A.;
Detchprohm, Theeradetch;
Ji, Mi-Hee;
Kim, Jeomoh;
Dupuis, Russell;
Lv, Wei;
Henry, Asegun

Publication type:

Article

100-nm thick single-phase wurtzite BAlN films with boron contents over 10%.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 8, p. n/a, doi. 10.1002/pssb.201600699

By:

Li, Xiaohang;
Wang, Shuo;
Liu, Hanxiao;
Ponce, Fernando A.;
Detchprohm, Theeradetch;
Dupuis, Russell D.

Publication type:

Article

Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-024-83398-0

By:

Daeumer, Matthias;
Yoo, Jae-Hyuck;
Xu, Zhiyu;
Cho, Minkyu;
Bakhtiary-Noodeh, Marzieh;
Detchprohm, Theeradetch;
Zhang, Yuxuan;
Thirupakuzi Vangipuram, Vijay Gopal;
Talesara, Vishank;
Xu, Yibo;
Letts, Edward;
Key, Daryl;
Li, Tian T.;
Shao, Qinghui;
Dupuis, Russell;
Shen, Shyh-Chiang;
Lu, Wu;
Zhao, Hongping;
Hashimoto, Tadao;
Laurence, Ted A.

Publication type:

Article