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MBE GROWTH OF GaAs NANOWHISKERS STIMULATED BY THE ADATOM DIFFUSION.
- Published in:
- International Journal of Nanoscience, 2007, v. 6, n. 3/4, p. 225, doi. 10.1142/S0219581X07004626
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- Article
Construction of New Exact Rational Solutions to the Veselov–Novikov Equation and New Exact Rational Potentials for the Two-Dimensional Schrödinger Stationary Equation by the <MATH>\bar{\partial}</MATH>-Dressing Method.
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- Russian Physics Journal, 2003, v. 46, n. 4, p. 414, doi. 10.1023/A:1025736228444
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- Article
MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.
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- Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056
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- Article
Nucleation and Growth Modeling of Protein Crystals in Capillaries.
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- Semiconductors, 2018, v. 52, n. 16, p. 2132, doi. 10.1134/S1063782618160339
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- Article
The initial stage of growth of crystalline nanowhiskers.
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- Semiconductors, 2010, v. 44, n. 1, p. 112, doi. 10.1134/S1063782610010197
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- Article
Semiconductor nanowhiskers: Synthesis, properties, and applications.
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- Semiconductors, 2009, v. 43, n. 12, p. 1539, doi. 10.1134/S106378260912001X
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- Article
Nonlinear effects during the growth of semiconductor nanowires.
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- Semiconductors, 2009, v. 43, n. 9, p. 1226, doi. 10.1134/S1063782609090231
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- Article
Properties of GaAsN nanowires grown by magnetron-sputtering deposition.
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- Semiconductors, 2009, v. 43, n. 7, p. 906, doi. 10.1134/S106378260907015X
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- Article
Specific features of formation of GaAs nanowire crystals during molecular beam epitaxy on different silicon surfaces.
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- Semiconductors, 2008, v. 42, n. 12, p. 1445, doi. 10.1134/S1063782608120130
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- Article
Deposition-rate dependence of the height of GaAs-nanowires.
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- Semiconductors, 2008, v. 42, n. 11, p. 1259, doi. 10.1134/S106378260811002X
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- Article
Nucleation at the lateral surface and the shape of whisker nanocrystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1240, doi. 10.1134/S1063782607100211
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- Article
Effect of deposition conditions on nanowhisker morphology.
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- Semiconductors, 2007, v. 41, n. 7, p. 865, doi. 10.1134/S1063782607070159
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- Publication type:
- Article
The role of surface diffusion of adatoms in the formation of nanowire crystals.
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- Semiconductors, 2006, v. 40, n. 9, p. 1075, doi. 10.1134/S1063782606090168
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- Article
The theory of the formation of multilayered thin films on solid surfaces.
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- Semiconductors, 2006, v. 40, n. 3, p. 249, doi. 10.1134/S1063782606030018
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- Article
The band structure and photoluminescence in a Ge<sub>0.8</sub>Si<sub>0.2</sub>/Ge<sub>0.1</sub>Si<sub>0.9</sub> superlattice with vertically correlated quantum dots.
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- Semiconductors, 2006, v. 40, n. 2, p. 224, doi. 10.1134/S1063782606020205
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- Article
Growth Kinetics of Thin Films Formed by Nucleation during Layer Formation.
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- Semiconductors, 2005, v. 39, n. 11, p. 1267, doi. 10.1134/1.2128448
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- Article
The Transition from Thermodynamically to Kinetically Controlled Formation of Quantum Dots in an InAs/GaAs(100) System.
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- Semiconductors, 2005, v. 39, n. 7, p. 820, doi. 10.1134/1.1992641
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- Article
Suppression of Dome-Shaped Clusters During Molecular Beam Epitaxy of Ge on Si(100).
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- Semiconductors, 2004, v. 38, n. 10, p. 1202, doi. 10.1134/1.1808829
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- Article
On diffusion lengths of Ga adatoms on AlAs(111) and GaAs(111) surfaces.
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- Technical Physics, 2009, v. 54, n. 4, p. 586, doi. 10.1134/S1063784209040227
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- Article
Growth dynamics of a single-component crystalline thin film.
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- Technical Physics, 1997, v. 42, n. 11, p. 1365, doi. 10.1134/1.1258853
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- Article
Heterostructure formation in nanowhiskers via diffusion mechanism.
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 9, p. 750, doi. 10.1134/S1063785008090095
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- Article
Hexagonal structures in GaAs nanowhiskers.
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 6, p. 538, doi. 10.1134/S1063785008060278
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- Article
Effect of growth atmosphere on the temperature profile along a nanowhisker.
- Published in:
- Technical Physics Letters, 2008, v. 34, n. 6, p. 512, doi. 10.1134/S1063785008060199
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- Article
Computer simulation of coherent island growth in Ge/Si and InAs/GaAs systems.
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- Technical Physics Letters, 2007, v. 33, n. 6, p. 490, doi. 10.1134/S1063785007060144
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- Article
Assessing the minimum diameter of nanowhiskers.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 12, p. 1047, doi. 10.1134/S1063785006120157
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- Article
Growth of GaAs nanowhisker arrays by magnetron sputtering on Si(111) substrates.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 6, p. 520, doi. 10.1134/S1063785006060216
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- Publication type:
- Article
Nanodimensional whisker growth by the generalized vapor-liquid-crystal mechanism.
- Published in:
- Technical Physics Letters, 2006, v. 32, n. 3, p. 185, doi. 10.1134/S1063785006030011
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- Article
Time Variation of the Mean Quantum Dot Size at the Kinetic Growth Stage.
- Published in:
- Technical Physics Letters, 2005, v. 31, n. 2, p. 161, doi. 10.1134/1.1877635
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- Article
A Modified Kolmogorov Model and the Growth Rate of a Crystal Face of Arbitrary Size.
- Published in:
- Technical Physics Letters, 2004, v. 30, n. 9, p. 791, doi. 10.1134/1.1804598
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- Article
Kinetic Model of the Growth of Nanodimensional Whiskers by the Vapor–Liquid–Crystal Mechanism.
- Published in:
- Technical Physics Letters, 2004, v. 30, n. 8, p. 682, doi. 10.1134/1.1792313
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- Article
Spontaneous formation of arrays of three-dimensional islands in epitaxial layers.
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- Technical Physics Letters, 1998, v. 24, n. 7, p. 507, doi. 10.1134/1.1262172
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- Article
Fabrication of InAs quantum dots on silicon.
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- Technical Physics Letters, 1998, v. 24, n. 4, p. 290, doi. 10.1134/1.1262087
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- Article
Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System.
- Published in:
- Semiconductors, 2003, v. 37, n. 7, p. 855, doi. 10.1134/1.1592864
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- Article
Heteroepitaxial growth of InAs on Si: a new type of quantum dot.
- Published in:
- Semiconductors, 1999, v. 33, n. 9, p. 972, doi. 10.1134/1.1187815
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- Article
Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams.
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- Semiconductors, 1997, v. 31, n. 8, p. 768, doi. 10.1134/1.1187245
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- Article
Asymptotic Stage of Self-Catalyzed Growth of III–V Nanowires by Molecular Beam Epitaxy.
- Published in:
- Technical Physics Letters, 2024, v. 50, n. 2, p. 106, doi. 10.1134/S1063785023170066
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- Article
Nanoisland Shape Variation during Selective Epitaxy.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 10, p. 701, doi. 10.1134/S1063785021070191
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- Article
Gallium Diffusion Flow Direction during Deposition on the Surface with Regular Hole Arrays.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 8, p. 601, doi. 10.1134/S1063785021060213
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- Article
The Dependence of the Growth Rate and Structure of III–V Nanowires on the Adatom Collection Area on the Substrate Surface.
- Published in:
- Technical Physics Letters, 2021, v. 47, n. 6, p. 440, doi. 10.1134/S1063785021050060
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- Article
Growth Kinetics of Planar Nanowires.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 10, p. 1008, doi. 10.1134/S1063785020100223
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- Article
Free Energy of Nucleus Formation during Growth of III–V Semiconductor Nanowires.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 9, p. 889, doi. 10.1134/S1063785020090187
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- Article
Limits of III–V Nanowire Growth.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 9, p. 859, doi. 10.1134/S1063785020090035
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- Article
Kinetics of Nucleus Growth from a Nanophase.
- Published in:
- Technical Physics Letters, 2020, v. 46, n. 4, p. 357, doi. 10.1134/S1063785020040203
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- Article
Criterion for the onset of ostwald ripening stage with allowance for the particle number fluctuations in a nucleus.
- Published in:
- Technical Physics Letters, 2010, v. 36, n. 3, p. 219, doi. 10.1134/S1063785010030077
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- Article
Features of nucleation in nanovolumes.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 12, p. 1117, doi. 10.1134/S1063785009120141
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- Publication type:
- Article
Effect of nucleation on the crystalline structure of nanowhiskers.
- Published in:
- Technical Physics Letters, 2009, v. 35, n. 4, p. 380, doi. 10.1134/S1063785009040282
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- Publication type:
- Article
Photoluminescence properties of GaAs nanowire ensembles with zincblende and wurtzite crystal structure.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2010, v. 4, n. 7, p. 175, doi. 10.1002/pssr.201004185
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- Publication type:
- Article
Critical diameters and temperature domains for MBE growth of III-V nanowires on lattice mismatched substrates.
- Published in:
- Physica Status Solidi - Rapid Research Letters, 2009, v. 3, n. 4, p. 112, doi. 10.1002/pssr.200903057
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- Article
Determination of the diffusion lengths of Ga adatoms using GaN stripe profiling.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 4, p. 851, doi. 10.1002/pssa.201431912
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- Publication type:
- Article
Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 2, p. 360, doi. 10.1007/s11671-009-9488-2
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- Article